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Atomic layer deposition of ultrathin indium oxide and indium tin oxide films using a trimethylindium, tetrakis(dimethylamino)tin, and ozone precursor system
摘要： Indium oxide (IO) and indium tin oxide (ITO) are widely used in optoelectronics applications as a high quality transparent conducting oxide layer. A potential application of these coatings is for enhancing the electrical properties of spacecraft thermal radiator coatings, where dissipating built-up static charge is crucial. In this work, the authors investigated the thickness-dependent electrical and optical properties of IO thin films synthesized by atomic layer deposition (ALD) with the aim of finding the optimum condition for coating radiator pigments. Trimethylindium and ozone were used as precursors for IO, while a tetrakis(dimethylamino)tin(IV) source was used for Sn doping to produce ITO. As-deposited IO films prepared at 140 °C resulted in a growth per cycle of ~0.46 ?/cycle and film resistivity as low as 1.4 × 10^{-3} Ω cm. For the case of ITO thin films, an ALD process supercycle consisting of 1 Sn + 19 In cycles is shown to provide the optimum level of Sn doping corresponding to 10 wt. % widely reported in the literature.
关键词： atomic layer deposition,indium oxide,optoelectronics,transparent conducting oxides,thin films,indium tin oxide
更新于2025-09-23 15:23:52
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MoS <sub/>2</sub> thin films from a (N <i> <sup>t</sup></i> Bu) <sub/>2</sub> (NMe <sub/>2</sub> ) <sub/>2</sub> Mo and 1-propanethiol atomic layer deposition process
摘要： Potential commercial applications for transition metal dichalcogenide (TMD) semiconductors such as MoS2 rely on unique material properties that are only accessible at monolayer to few-layer thickness regimes. Therefore, production methods that lend themselves to the scalable and controllable formation of TMD films on surfaces are desirable for high volume manufacturing of devices based on these materials. The authors have developed a new thermal atomic layer deposition process using bis(tert-butylimido)-bis(dimethylamido)molybdenum and 1-propanethiol to produce MoS2-containing amorphous films. They observe a self-limiting reaction behavior with respect to both the Mo and S precursors at a substrate temperature of 350 °C. Film thickness scales linearly with precursor cycling, with growth per cycle values of ≈0.1 nm/cycle. As-deposited films are smooth and contain nitrogen and carbon impurities attributed to poor ligand elimination from the Mo source. Upon high-temperature annealing, a large portion of the impurities are removed, and the authors obtain few-layer crystalline 2H-MoS2 films.
关键词： atomic layer deposition,MoS2,thin films,transition metal dichalcogenides,annealing,precursors
更新于2025-09-23 15:23:52
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Atomic layer deposition of cobalt(II) oxide thin films from Co(BTSA) <sub/>2</sub> (THF) and H <sub/>2</sub> O
摘要： In this work, we have studied the applicability of Co(BTSA)2(THF) [BTSA = bis(trimethylsilyl)amido] (THF = tetrahydrofuran) in atomic layer deposition (ALD) of cobalt oxide thin films. When adducted with THF, the resulting Co(BTSA)2(THF) showed good volatility and could be evaporated at 55 °C, which enabled film deposition in the temperature range of 75–250 °C. Water was used as the coreactant, which led to the formation of Co(II) oxide films. The saturative growth mode characteristic to ALD was confirmed with respect to both precursors at deposition temperatures of 100 and 200 °C. According to grazing incidence x-ray diffraction measurements, the films contain both cubic rock salt and hexagonal wurtzite phases of CoO. X-ray photoelectron spectroscopy measurements confirmed that the primary oxidation state of cobalt in the films is +2. The film composition was analyzed using time-of-flight elastic recoil detection analysis, which revealed the main impurities in the films to be H and Si. The Si impurities originate from the BTSA ligand and increased with increasing deposition temperature, which indicates that Co(BTSA)2(THF) is best suited for low-temperature deposition. To gain insight into the surface chemistry of the deposition process, an in situ reaction mechanism study was conducted using quadrupole mass spectroscopy and quartz crystal microbalance techniques. Based on the in situ experiments, it can be concluded that film growth occurs via a ligand exchange mechanism.
关键词： atomic layer deposition,reaction mechanism,thin films,Co(BTSA)2(THF),cobalt oxide,water
更新于2025-09-23 15:23:52
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Low-Temperature Plasma-Enhanced Atomic Layer Deposition of Tin(IV) Oxide from a Functionalized Alkyl Precursor: Fabrication and Evaluation of SnO <sub/>2</sub> -Based Thin-Film Transistor Devices
摘要： A bottom-up process from precursor development for tin to plasma-enhanced atomic layer deposition (PEALD) for tin(IV) oxide and its successful implementation in a working thin-film transistor device is reported. PEALD of tin(IV) oxide thin films at low temperatures down to 60 °C employing tetrakis-(dimethylamino)propyl tin(IV) [Sn(DMP)4] and oxygen plasma is demonstrated. The liquid precursor has been synthesized and thoroughly characterized with thermogravimetric analyses, revealing sufficient volatility and long-term thermal stability. [Sn(DMP)4] demonstrates typical saturation behavior and constant growth rates of 0.27 or 0.42 ? cycle?1 at 150 and 60 °C, respectively, in PEALD experiments. Within the ALD regime, the films are smooth, uniform, and of high purity. On the basis of these promising features, the PEALD process was optimized wherein a 6 nm thick tin oxide channel material layer deposited at 60 °C was applied in bottom-contact bottom-gate thin-film transistors, showing a remarkable on/off ratio of 107 and field-effect mobility of ≈ 12 cm2 V?1 s?1 for the as-deposited thin films deposited at such low temperatures.
关键词： thin-film transistors,tin(IV) oxide,thin films,precursors,atomic layer deposition
更新于2025-09-23 15:23:52
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Tuning Material Properties of ZnO Thin Films for Advanced Sensor Applications
摘要： We report on the growth of ZnO thin films by plasma-enhanced atomic layer deposition as a function of substrate temperature. The method to ensure self-limiting growth with precise thickness control is discussed and the effect of temperature on the texture of the thin films is presented. Switching the texture from (100) to (002) by increasing the substrate temperature is a key property for functional devices. The ZnO thin films with tailored properties could find applications in a wide range of sensors and actuators.
关键词： atomic layer deposition,ZnO,thin film,semiconductor
更新于2025-09-23 15:23:52
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Diversity of TiO <sub/>2</sub> : Controlling the Molecular and Electronic Structure of Atomic-Layer-Deposited Black TiO <sub/>2</sub>
摘要： Visually black, electrically leaky, amorphous titania (am-TiO2) thin films were grown by atomic layer deposition (ALD) for photocatalytic applications. Broad spectral absorbance in the visible range and exceptional conductivity are attributed to trapped Ti3+ in the film. Oxidation of Ti3+ upon heat treatment leads to a drop in conductivity, a color change from black to white and crystallization of am-TiO2. ALD grown black TiO2, without any heat treatment, is subject to dissolution in alkaline photoelectrochemical conditions. The best photocatalytic activity for solar water splitting is obtained for completely crystalline white TiO2.
关键词： atomic layer deposition,photocatalysis,titanium dioxide,protecting overlayers,crystallization,oxide defects,water splitting
更新于2025-09-23 15:23:52
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Thermal atomic layer etching: Mechanism, materials and prospects
摘要： In the semiconductors and related industries, the fabrication of nanostructures and nanopatterns has become progressive demand for achieving near-atomic accuracy and selectivity in etching different materials, particularly in ultra-thin gate dielectrics and ultra-thin channels used in field-effect transistors and other nanodevices below 10 nm scale. Atomic layer etching (ALE) is a novel technique for removing thin layers of material using sequential and self-limiting reactions. Different from most ALE processes using plasma-enhanced or other energetic particles-enhanced surface reactions, thermal ALE realizes isotropic atomic-level etch control based on sequential thermal-drive reaction steps that are self-terminating and self-saturating. Thermal ALE can be viewed as the reverse of atomic layer deposition (ALD), both of which define the atomic layer removal and growth steps required for advanced semiconductor fabrication. In this review, we focus on the concept and basic characteristics of the thermal ALE in comparison with ALD. Several typical thermal ALE mechanisms including fluorination and ligand-exchange, conversion-etch, oxidation and fluorination reactions are intensively introduced. The pros and cons of thermal ALE, plasma ALE, and traditional plasma etching are compared. Some representative materials and their typical thermal ALE processes are summarized. Finally, the outlook and challenges of thermal ALE are addressed.
关键词： Thermal atomic layer etching,Reaction mechanism,Atomic-scale precision,Atomic layer deposition,Self-limiting
更新于2025-09-23 15:22:29
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Preparation of radial ZnSe-CdS nano-heterojunctions through atomic layer deposition method and their optoelectronic applications
摘要： Radial 1-D nano-heterojunctions have distinct optoelectronic properties. However, their complex fabrication process is still the bottleneck of device applications. Herein, a facile atomic layer deposition (ALD) method was used to coat a polycrystalline CdS thin film with high uniformity and controllable thickness on the surface of the as-synthesized p-type ZnSe nanowires, for fabricating radial 1-D ZnSe-CdS nano-heterojunctions. The nano-heterojunctions exhibited excellent optoelectronic properties. Under blue/violet light, the nano-heterojunctions obtained a response radio of ~5 × 10^3, a responsitivity of ~1.43 A/W, a gain of ~3.78 and a detectivity of ~0.57 × 10^12 cmHz^{1/2}W^{-1} at zero bias. Furthermore, the nano-heterojunction also showed obvious photovoltaic characteristic with a power conversion efficiency of ~0.96%. This method is expected to play an important role in nano-heterojunction construction and their device applications.
关键词： ZnSe,CdS,Photovoltaic,Nano-heterojunction,Atomic layer deposition,Photodetector
更新于2025-09-23 15:22:29
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Particle atomic layer deposition
摘要： The functionalization of fine primary particles by atomic layer deposition (particle ALD) provides for nearly perfect nanothick films to be deposited conformally on both external and internal particle surfaces, including nanoparticle surfaces. Film thickness is easily controlled from several angstroms to nanometers by the number of self-limiting surface reactions that are carried out sequentially. Films can be continuous or semi-continuous. This review starts with a short early history of particle ALD. The discussion includes agitated reactor processing, both atomic and molecular layer deposition (MLD), coating of both inorganic and polymer particles, nanoparticles, and nanotubes. A number of applications are presented, and a path forward, including likely near-term commercial products, is given.
关键词： Coating,Particle ALD,Nanoparticle,Nanolayers,Atomic layer deposition
更新于2025-09-23 15:22:29
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Decoupling Effects of Surface Recombination and Barrier Height on p-Si(111) Photovoltage in Semiconductor|Liquid Junctions via Molecular Dipoles and Metal Oxides
摘要： This work provides insight into carrier dynamics in a model photoelectrochemical system comprised of a semiconductor, metal oxide, and metal. To isolate carrier dynamics from catalysis, a common catalytic metal (Pt) is used in concert with an outer-sphere redox couple. Silicon (111) substrates were surface-functionalized with electronegative aryl moieties (p-nitrophenyl and m-dinitrophenyl). A mixed monolayer using p-nitrophenyl/methyl exhibited high surface quality as determined by X-ray photoelectron spectroscopy (low surface SiOx content) and low surface recombination velocity. This substrate also exhibited the expected positive surface dipole, as evidenced by rectifying J?V behavior on p-type substrates, and by positive photovoltage measured by surface photovoltage spectroscopy. Its close molecular relative m-dinitrophenyl exhibited poor electronic surface quality as indicated by high SiOx coverage and high surface recombination velocities (S > 3000 cm s?1). Photoelectrochemical J?V measurements of p-type Si-functionalized surfaces in contact with a high concentration (50 mM) of methyl viologen (MV2+) in aqueous media revealed VOC values that are correlated with the measured barrier heights. In contrast, low-concentration (1.5 mM) MV2+ experiments revealed significant contributions from surface recombination. Next, the electronic and (photo)electrochemical properties were studied as a function of ALD metal oxide deposition (TiO2, Al2O3) and Pt deposition. For the m-dinitrophenyl substrate, ALD deposition of both TiO2 and Al2O3 (150 °C, amorphous) decreased the surface recombination velocity. Surprisingly, this TiO2 deposition resulted in negative shifts in VOC for all surfaces (possibly ALD-TiO2 defect band effects). However, Pt deposition recovered the efficiencies beyond those lost in TiO2 deposition, affording the most positive VOC values for each substrate. Overall, this work demonstrates that (1) when carrier collection is kinetically fast, p-Si(111)?R devices are limited by thermal emission of carriers over the barrier, rather than by surface recombination. And (2) although TiO2 |Pt improves the PEC performance of all substrates, the beneficial effects of the underlying (positive) surface dipole are still realized. Lastly (3) Pt deposition is demonstrated to provide beneficial charge separation effects beyond enhancing catalytic rates.
关键词： solar fuels,interfacial dipole,atomic layer deposition (ALD),surface functionalization,band-edge modulation,photoelectrochemistry
更新于2025-09-23 15:22:29