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Two stage modelling of solar photovoltaic cells based on Sb2S3 absorber with three distinct buffer combinations
摘要： Solar cell research has always been an attraction by virtue of its clean and green status. However, to overcome the implications of high cost and moderate efficiency, there has always been fierce competition to search alternative approach for designing efficient solar cells with optimal performance-cost ratio. Recently, antimony sulfide (Sb2S3) has received substantial attention as an absorber in thin film solar cells due to earth abundance, low cost, non-toxic property and high optical absorption. Still, its performance could not match Si based cells. In this work, we adopted two-stage simulation approach to design Sb2S3 absorber based heterojunction solar cell to enhance efficiency. Initial simulation for configuration optimization was done considering thickness, defect density, recombination (radiative, Auger) effect, carrier density of the Sb2S3 absorber layer. Buffer layer thickness and absorption coefficient optimization was taken up. Further, series and shunt resistance of the device as well as conduction band offset (CBO) at absorber/buffer interface was also optimized at initial stage only. In the next level of simulation, efficiency enhancement was achieved by optimizing optimal back contact metal work function, absorber layer band gap grading and temperature. The aforesaid two-stage optimization yielded efficiency ~24.81%, which is higher than conventional thin film solar cell. The optimal solar cell structure configuration, for Sb2S3 absorber solar cell, suggested a positive CBO of 0.26 eV (e.g.; ZnS buffer layer), a back contact metal work function of 5.1 eV (e.g.; Mo, Au) and band gap grading window ~1.31 to 1.62 eV.
关键词： Conduction band offset,Sb2S3 solar cell,Work function,Band gap grading,Simulation
更新于2025-09-23 15:21:01
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Effect of solid-H <sub/>2</sub> S gas reactions on CZTSSe thin film growth and photovoltaic properties of a 12.62% efficiency device
摘要： We fabricated CZTSSe thin films using optimized SLG-Mo/Zn/Cu/Sn (MZCT) as a stacked structure and described the phenomenon of Zn elemental volatilization using the MZCT stacked structure. We introduced H2S gas to effectively control the S/(S + Se) ratio of the film in the sulfo-selenization process and to suppress Zn volatilization. Unlike during the selenization process, a stable ZnSSe thin film was formed on the precursor surface during the sulfo-selenization process. The formation of the ZnSSe thin film inhibited Zn volatilization, which facilitated control of the thin film stoichiometry and played an important role in crystal growth. In addition, the sulfo-selenization process using H2S forms a grading of the S/(S + Se) ratio in the depth direction in the ZnSSe layer. The ZnSSe layer with this property causes the band gap grading in the CZTSSe absorption layer. Finally, through our optimized annealing process, we realized a world record CZTSSe solar cell with a certified power conversion efficiency of 12.62% and a centimetre-scale (1.1761 cm2) efficiency of 11.28%.
关键词： CZTSSe,H2S gas,photovoltaic,sulfo-selenization,Zn volatilization,thin film,band gap grading
更新于2025-09-16 10:30:52