研究目的
Investigating the effect of solid-H2S gas reactions on CZTSSe thin film growth and photovoltaic properties to achieve high-efficiency solar cells.
研究成果
The study successfully demonstrated the use of H2S gas in the sulfo-selenization process to control Zn volatilization and achieve band gap grading in CZTSSe thin films, leading to a record power conversion efficiency of 12.62%. The findings underscore the importance of precursor structure and annealing conditions in optimizing photovoltaic properties.
研究不足
The study highlights the challenges in controlling Zn volatilization and achieving uniform composition in CZTSSe thin films. The process reproducibility and the need for further optimization of the buffer and TCO layers to improve device efficiency are noted as areas for future research.
1：Experimental Design and Method Selection
The study involved fabricating CZTSSe thin films using a stacked structure of SLG-Mo/Zn/Cu/Sn (MZCT) and introducing H2S gas during the sulfo-selenization process to control the S/(S + Se) ratio and suppress Zn volatilization.
2：Sample Selection and Data Sources
Metal precursor films were fabricated on molybdenum-coated SLG substrates by sputtering 99.99% pure Cu, Zn, and Sn targets.
3：List of Experimental Equipment and Materials
Sputtering system for metal precursor deposition, annealing equipment with halogen lamp heat sources, SEM (Hitachi Co., model S-4800), STEM-EDS (QUANTAX-200, Bruker Co.), ICP (ICPS-8100, Shimadzu Co.), solar simulator (94022A, Newport Co.), LCR meter (E4980A, Agilent).
4：Experimental Procedures and Operational Workflow
The metal precursors were sequentially deposited by sputtering, followed by annealing in a controlled atmosphere with H2S gas. The process included selenization and sulfo-selenization steps under optimized temperature profiles.
5：Data Analysis Methods
Characterization included SEM, STEM-EDS, ICP measurements, J-V characteristics, EQE measurements, C-V, and DLCP measurements to analyze the thin films and device performance.
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SEM
S-4800
Hitachi Co.
Surface imaging of absorber layers
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STEM-EDS
QUANTAX-200
Bruker Co.
Composition analysis and mapping of secondary phases
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ICP
ICPS-8100
Shimadzu Co.
Composition analysis of absorber layers
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LCR meter
E4980A
Agilent
C-V and DLCP measurements
E4980A/E4980AL Precision LCR Meter
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Solar simulator
94022A
Newport Co.
Measurement of J-V characteristics under illumination
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