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The characteristics of Cu(In, Ga)Se2 thin-film solar cells by bandgap grading
摘要： The performance of CIGSe-1 and CIGSe-2 absorber layers are compared with Eg grading such that a higher Ga content is incorporated into the back region. A wider depth range of the high-Ga region near the back of a CIGSe absorber layer can reduce its performance due to the increased formation of Ga-related defects and defect clusters. Therefore, for an Eg-graded CIGSe layer with a wider Eg on the back surface, appropriate Eg grading can improve its performance.
关键词： CIGSe,bandgap grading,defect,surface potential,solar cell
更新于2025-11-14 17:28:48
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Characterization of Lattice Parameters Gradient of Cu(In1-xGax)Se2 Absorbing Layer in Thin-Film Solar Cell by Glancing Incidence X-Ray Diffraction Technique
摘要： In or Ga gradients in the Cu(In1-xGax)Se2 (CIGS) absorbing layer lead to change the lattice parameters of the absorbing layer, giving rise to the bandgap grading in the absorbing layer which is directly associated with the degree of absorbing ability of the CIGS solar cell. We tried to characterize the depth profile of the lattice parameters of the CIGS absorbing layer using a glancing incidence X-ray diffraction (GIXRD) technique, and then allows to determine the In or Ga gradients in the CIGS absorbing layer, and to investigate the bandgap grading of the CIGS absorbing layer. When the glancing incident angle increased from 0.50 to 5.00°, the a and c lattice parameters of the CIGS absorbing layer gradually decreased from 5.7776(3) to 5.6905(2) ?, and 11.3917(3) to 11.2114(2) ?, respectively. The depth profile of the lattice parameters as a function of the incident angle was consistent with vertical variation in the composition of In or Ga with depth in the absorbing layer. The variation of the lattice parameters was due to the difference between the ionic radius of In and Ga co-occupying at the same crystallographic site. According to the results of the depth profile of the refined parameters using GIXRD data, the bandgap of the CIGS absorber layer was graded over a range of 1.222 to 1.532 eV. This approach nondestructively guess the bandgap depth profile through the refinement of the lattice parameters using GIXRD data on the assumption that the changes of the lattice parameters or unit-cell volume follow a good approximation to Vegard’s law.
关键词： Vegard’s law,Cu(In1-xGax)Se2 absorbing layer,Depth profile,Bandgap grading,Glancing incidence X-ray diffraction technique
更新于2025-09-23 15:21:01
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Simulation of graded bandgap on backwall superstrate CIGS solar cells with MoOx electron reflection layer
摘要： A model of backwall superstrate CuInxGa(1?x)Se2 (CIGS) solar cell with MoOx as an electron reflection layer has been investigated by Solar Cell Capacitance Simulator (SCAPS). The influence of the CIGS absorber with different thicknesses on the performance of the CIGS solar cells with a flat bandgap structure is carefully analyzed. When the CIGS thickness is 400 nm, the device with 10 nm MoOx layer has the highest efficiency of 8.24%. To further increase the efficiency, a graded bandgap structure, near the MoOx layer, has been established, and the efficiency can be improved from 8.24% to 15.01% when the maximum bandgap value and the length of the graded region are 1.6 eV and 240 nm, respectively. The causes of efficiency enhancement by this graded bandgap structure are then studied. With an additional graded bangap structure in SCR, close to the CdS layer, the efficiency is slightly improved from 15.01% to 15.15%. Finally, the simulation results show that the efficiency can be increased from 15.15% to 16.26% when the thickness of MoOx is reduced from 10 nm to 1 nm.
关键词： backwall superstrate,MoOx,bandgap grading,CIGS solar cells,SCAPS
更新于2025-09-19 17:13:59
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Efficiency Enhancement of Ultra-thin CIGS Solar Cells Using Bandgap Grading and Embedding Au Plasmonic Nanoparticles
摘要： The objective of this study is to enhance the efficiency of copper indium gallium selenide (CIGS) solar cells. To accomplish that, composition grading of absorber layer was carried out by using SILVACO’s technology aided computer design (TCAD) ATLAS program. Results showed a meaningful improvement of output parameters including open-circuit voltage (Voc), short-circuit current (Isc), fill factor (FF), and power conversion efficiency (η). For further performance improvement of the cell, Au plasmonic scattering nanoparticles were loaded on the top of the ZnO window layer. Plasmonic nanoparticles can restrict, absorb, navigate, or scatter the incident light. By using the spherical Au nanoparticles, a very good increase in the light absorption in the cell over the reference planar CIGS solar cell was observed. The highest η = 19.01% was achieved for the designed ultra-thin bandgap-graded CIGS solar cell decorated by Au nanoparticles.
关键词： Surface plasmon,CIGS,Bandgap grading,FDTD,Light trapping
更新于2025-09-19 17:13:59
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Towards highly efficient thin-film solar cells with a graded-bandgap CZTSSe layer
摘要： A coupled optoelectronic model was implemented along with the differential evolution algorithm to assess the efficacy of grading the bandgap of the Cu2ZnSn(SξSe1?ξ)4 (CZTSSe) layer for enhancing the power conversion efficiency of thin-film CZTSSe solar cells. Both linearly and sinusoidally graded bandgaps were examined, with the molybdenum backreflector in the solar cell being either planar or periodically corrugated. Whereas an optimally graded bandgap can dramatically enhance the efficiency, the effect of periodically corrugating the backreflector is modest at best. An efficiency of 21.74% is predicted with sinusoidal grading of a 870-nm-thick CZTSSe layer, in comparison to 12.6% efficiency achieved experimentally with a 2200-nm-thick homogeneous CZTSSe layer. High electron-hole-pair generation rates in the narrow-bandgap regions and a high open-circuit voltage due to a wider bandgap close to the front and rear faces of the CZTSSe layer are responsible for the high enhancement of efficiency.
关键词： optoelectronic optimization,Bandgap grading,thin-film solar cell,earth-abundant materials,CZTSSe solar cell
更新于2025-09-16 10:30:52
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Modeling of a high performance bandgap graded Pb-free HTM-free perovskite solar cell
摘要： In this study, a lead-free nontoxic and hole transport material (HTM)-free perovskite solar cell (PSC) with a novel con?guration of glass/FTO/ZnO/CH3NH3SnI3(cid:1)xBrx/back contact has been modeled and optimized by a solar cell capacitance simulator (SCAPS). The bandgap of CH3NH3SnI3(cid:1)xBrx absorber is tuned in the range of 1.3 eV to 2.15 eV by variation of the Br doping content. To make a comparison, an optimized Pb-based PSC is also modeled. By optimizing the parameters, power conversion ef?ciency (PCE) of 16.30%, open circuit voltage (Voc) of 1.02 V, short circuit current density (Jsc) of 22.23 mA/cm2, and ?ll factor (FF) of 0.72 were obtained. As compare to the reports available in the literature, these results show much improvement and can provide guidelines for production of economic and environmentally friendly PSCs with further ef?ciency enhancement.
关键词： lead-free,perovskite solar cell,SCAPS,bandgap grading,HTM-free
更新于2025-09-11 14:15:04