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Passively Q-switched and mode-locked Erbium-doped fiber laser with topological insulator Bismuth Selenide (Bi2Se3) as saturable absorber at C-band region
摘要： We experimentally demonstrate Q-switched and mode-locked Erbium-doped fiber laser (EDFL) by using topological insulator (TI) Bismuth Selenide (Bi2Se3) as saturable absorber (SA). The fabricated Bi2Se3 SA exhibits modulation depth and saturation intensity at 39.8% and 90.2 MW/cm2, respectively. By incorporating the fabricated Bi2Se3 SA into the laser cavity, Q-switching operation is generated with repetition rate ranging from 23.5 kHz to 68.2 kHz, pulse width ranging from 2.4 μs to 8.6 μs and maximum peak power is calculated at 19.9 mW. Our cavity can also generate soliton mode-locked pulse with repetition rate of 23.3 MHz and pulse width of 0.63 ps by inserting an additional 5 m long single mode fiber (SMF) into the existing laser cavity. Spectral peaks due to Kelly side-bands and four wave mixing (FWM) were observed on the soliton spectrum. Both Q-switching and mode-locking pulses are stable in the laboratory environment, allowing the realization of compact and low cost pulsed fiber laser with Bi2Se3 SA for various photonics applications.
关键词： Topological insulator,Bismuth-selenide,Q-switched,EDFL,Mode-locked
更新于2025-11-28 14:24:03
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Growth Habits of Bismuth Selenide (Bi2Se3) layers and nanowires over Stranski–Krastanov Indium Arsenide Quantum Dots
摘要： Bismuth selenide layers and nanowires have been grown by molecular beam epitaxy on self-assembled Stranski–Krastanov InAs quantum dots of different sizes and densities on GaAs substrates. The size and density of the InAs quantum dots were modified by changes in the growth rate and composition. The structure and growth habits of the Bi2Se3 layers were studied by high-resolution x-ray diffraction, scanning probe microscopy, energy-dispersive x-ray spectroscopy and high-resolution electron microscopy. The epitaxial growth of continuous layers of (0001) Bi2Se3 was observed over flat InAs surfaces. In contrast, the presence of InAs quantum dots induced the growth of 100 nm-long and 20 nm-wide Bi2Se3 nanowires primarily oriented along [01-1] and [0-1-1] directions. The nanowires coalesced into full layers when the growth proceeded further. Better understanding and control of the Bi2Se3 growth habits over these surfaces should lead to novel nanostructures with enhanced physical properties.
关键词： InAs quantum dots,Bi2Se3,nanowires,topological insulator,Bismuth selenide,molecular beam epitaxy
更新于2025-09-12 10:27:22