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Influence of boron doping amount on properties of ZnO:B films grown by LPCVD technique and its correlation to a-Si:H/??c-Si:H tandem solar cells
摘要： Boron-doped ZnO:B (BZO) films with various doping levels have been prepared on large-area substrates by low pressured chemical vapor deposition technique. The influence of doping amount on electrical and optical properties of BZO films has been investigated. It is found that ZnO phase synthesis is hardly affected when the doping gas flow varies from 25 to 100 sccm, but the preferential orientation of grain growth is influenced progressively. It is interesting that there should be a threshold value of doping gas flow of 75 sccm that will cause an abrupt reduction in grain size of BZO and therefore dramatically weakens the light-scattering capacity of the film. It is also noted that the boron atoms doped in BZO films are partly electrically active, and moreover, the heavier doping level, the more inactive B atoms, which not only reduces carrier mobility, but also boosts a stronger light absorption due to enhanced impurity scattering. When the doping gas flow is 75 sccm, the BZO film can achieve a proper comprehensive property with a Rsq of 15.2 Ω/□, an average haze of 21.3% and an average TT of 80.2%. Using this film as the front electrode of a-Si:H/μc-Si:H solar cell, the optimum performance of the solar cell with a Jsc of 12.68 mA/cm2, a Voc of 1.385 mV, and an initial efficiency (η) of 11.83% was obtained.
关键词： a-Si:H/μc-Si:H tandem solar cells,Boron-doped ZnO:B films,doping amount,LPCVD technique,electrical and optical properties
更新于2025-09-23 15:21:01
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Fabrication of nanoheterostructures of boron doped ZnO-MoS2 with enhanced photostability and photocatalytic activity for environmental remediation applications
摘要： In this work, we have developed two dimensional (2D) nanosheets-nanoparticles (0D) nanoheterostructures of boron-doped ZnO nanoparticles loaded over MoS2 nanosheets with enhanced photocatalytic activity for pollutant removal. A series of nanoheterostructures with varying amount of MoS2 nanosheets were prepared using facile hydrothermal method and characterized by x-ray diffraction (XRD), Raman spectroscopy, scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) techniques to confirm there successful synthesis. The optimized nanoheterostructure photocatalyst with 1 wt% of MoS2 nanosheets (BZM1) exhibits superior photocatalytic activity for pollutant removal under visible light illumination. The superior photocatalytic activity of BZM1 nanoheterostructure has been supported by photoluminescence (PL) studies which show the remarkably decreased PL intensity signifying the low recombination rate of photogenerated charge carriers. In addition, the formation of 0D-2D heterojunction plays a significant role in enhancing the photocatalytic activity by accelerated photogenerated charge carriers separation in space and ultimately improved photocatalytic activity. Furthermore, the plausible photocatalytic mechanism has been discussed in detail on the basis of active species trapping experiment which validate the significant role of holes and hydroxyl radicals in degradation process. Overall, this work paves way for the facile fabrication of 0D-2D nanoheterostructures for diverse applications.
关键词： Boron doped ZnO,charge transfer,B-ZnO-MoS2 nanoheterostructures,environmental remediation,photocatalysis
更新于2025-09-19 17:15:36