- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Voltage-Induced Charge Redistribution in Cu(In,Ga)Se <sub/>2</sub> Devices Studied With High-Speed Capacitance–Voltage Profiling
摘要： Devices made from Cu(In,Ga)Se2 (CIGS) solar cell material have been evaluated with high-speed capacitance–voltage pro?ling after stepwise voltage changes. The changes primarily affect near-interface charge at deep acceptors within the CIGS absorber layer and generate temperature-dependent capacitance changes observed in deep-level transient spectroscopy measurements. SCAPS device modeling indicates that the deep acceptor concentration is up to the two orders of magnitude higher than the shallow doping level. High deep acceptor concentrations are found in all materials studied here. The large deep defect levels are high enough to limit minority carrier lifetime and cell ef?ciency.
关键词： CuInx Ga1 ?x Se2 (CIGS),capacitance methods,solar cells
更新于2025-09-23 15:23:52
-
[IEEE 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Paris, France (2018.10.14-2018.10.17)] 2018 7th International Conference on Renewable Energy Research and Applications (ICRERA) - Calculation of Degradation Rates of Poly Crystalline Si and CIGS PV Module using Outdoor Linear Interpolation Method
摘要： We propose the method to calculate the degradation rate of PV modules by outdoor linear interpolation method (LIM). Since the reference I-V curves which are based on measured I-V curves and used to LIM are created in each season, transitions of expected I-V curves indicate how PV modules degrade. The degradation rates of not only the maximum power but also the other parameters such as short circuit current and open circuit voltage can be calculated from the expected I-V curves. In this paper, the outdoor degradation rates of poly crystalline Si and CIGS were calculated. As a result, in poly crystalline Si case, the degradation rate of maximum power was calculated as -0.4 %/year due to short circuit current reduction. In CIGS case, although the initial power generation performance was better than the datasheet value, the annual degradation rate of the maximum power was calculated as -2.1 %/year. The reason of maximum power reduction was the reduction of both short-circuit current and open-circuit voltage.
关键词： photovoltaic module,CIGS,poly crystalline silicon,degradation,linear interpolation method
更新于2025-09-23 15:22:29
-
Effect of hydrodynamic conditions on the Cu(In,Ga)Se2 thin film growth by electrodeposition
摘要： In this paper, an experimental study about CIGS thin film growth due to hydrodynamic conditions variations on the working electrode surface is reported. Local hydrodynamic conditions were produced by the interaction of the natural convection flow with a non-conducting hemisphere placed on the working electrode surface. The electrodeposition process was made by a single bath with copper, indium, gallium and selenium ions to obtain CIGS thin films. The electrodes in the electrolytic cell were placed vertically. The as-electrodeposited CIGS thin film morphology near the hemisphere had a characteristic growth as a consequence of the local hydrodynamic conditions. CIGS thin film morphology and composition variations due to the wake and boundary layer were identified. With the CIGS film morphology obtained due to the presence of the wake was possible to represent the natural convection flow pattern on the Mo electrode surface. The CIGS thin film composition, inside and outside of the wake and throughout the boundary layer, was characterized. The gallium incorporation to the CIGS film was principally affected. As a consequence of this study, it was found that the atomic percentage of gallium in the CIGS film is related to deposition current density.
关键词： Electrodeposition,CIGS thin film,Natural convection flow
更新于2025-09-23 15:22:29
-
Charge transportation at cascade energy structure interfaces of CuInxGa1-xSeyS2-y/CdS/ZnS for spontaneous water splitting
摘要： A photoelectrode has to generate high enough photovoltage by efficient charge separation spontaneously to split water. In this study, cascade band structures with CdS and ZnS applied to CuInxGa1-xSeyS2-y (CIGS) photoelectrode of water splitting. The morphology, the electronic and the chemical state of CIGS heterojunction films have been characterized by a scanning electron microscopy, X-ray photoelectron spectroscopy, and ultraviolet photoelectron spectroscopy. The CIGS/CdS/ZnS photocathode shows ~400 mV anodic shift of onset potential and 0.028% efficiency for solar to hydrogen conversion when it couples with a WO3/BiVO4/Co-Pi photoanode for water splitting without external bias potential.
关键词： Photoelectrochemical cell,water splitting,CdS,CIGS,ZnS
更新于2025-09-23 15:21:21
-
Color tuning in Cu(In,Ga)Se <sub/>2</sub> thin-film solar cells by controlling optical interference in transparent front layers
摘要： Aesthetic factors such as colorization in harmony with the surrounding environment are becoming important in the field of applied photovoltaics. Therefore, there exists a need to realize colors in solar cells, with minimum additional cost and efficiency loss. We tuned the color of Cu(In,Ga)Se2 thin-film solar cells by controlling the optical interference between the sputtered Zn(O,S) buffer layer and indium tin oxide (ITO) transparent electrode layer, which are intrinsic components of the solar cell device, without any additional process and/or material. The nontoxic Cd-free buffer layer was prepared in consideration of the environmental factor. In order to minimize the degradation of the photovoltaic performance of the solar cell, the experiment was conducted within the thickness (optical path length) of the Zn(O,S) and ITO transparent front layers, which affected the solar cell performance more optically and less electrically. As the antireflection coating thickness increased, the solar cell was calculated to have a wider color range, lower luminosity, and lower JSC loss. Relatively even efficiencies were obtained with a wide color range.
关键词： color,transparent front layer,optical interference,CIGS thin-film solar cell,nontoxic Cd-free buffer
更新于2025-09-23 15:21:01
-
[IEEE 2019 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS) - Taipei, Taiwan (2019.12.3-2019.12.6)] 2019 International Symposium on Intelligent Signal Processing and Communication Systems (ISPACS) - Study and explore on the energy harvesting of the solar cell with DC/DC converter PWM system
摘要： Energy harvesting is generally defined as the collection of light, heat, vibration, and energy sources such as electromagnetic waves, and converting into electricity to provide the equipment itself with enough energy to maintain normal operation. This research uses sunlight to convert into energy output. It controls the voltage of the output by controlling the duty of the PWM technology. The system requires a DC/DC design and the output has a large capacitance. And the DC/DC post-stage filtering must be good. CIGS solar cells (efficiency of about 20%) are composed of Cu, In, Ga, and Se in a specific ratio, and have a wider wavelength range and absorption coefficient than tantalum materials.
关键词： PWM system,Energy harvesting,CIGS,Solar cell,DC/DC converter
更新于2025-09-23 15:21:01
-
[IEEE 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Khulna, Bangladesh (2019.12.20-2019.12.22)] 2019 4th International Conference on Electrical Information and Communication Technology (EICT) - Thickness and Doping Optimization of CdS/CIGS P-i-N Photovoltaic Cell: Envisioned for Enhanced Conversion Efficiency
摘要： In this work, a high efficiency CdS/CIGS P-i-N solar cell has been proposed and delineated incorporating CIGS as an intrinsic layer and an immensely doped CIGS as a graded p-type layer. As ensued from our simulation, a conversion efficiency of 20.94% is attained with the coalescence of highly doped TCO layer (ZnO), n-type CdS window layer, CIGS as intrinsic layer and an ungraded (fixed doping concentration) CIGS absorber layer. It is construed that after introducing the graded (several doping concentrations) p-type absorber layer, the efficiency conspicuously amplified to a significant extent. At AM 1.5 solar radiation, the proposed graded cell structure yields an open circuit voltage (Voc) of 0.726 V, a short circuit current density (Jsc) of 57.72 mAcm-2, a maximum power density of 35.27 mWcm-2 and a fill factor (FF) of 84%, conforming to an overall efficiency (η) of 29.69%.
关键词： Intrinsic Layer,p-i-n solar cell,Graded Absorber Layer,CdS/CIGS,BSF layer
更新于2025-09-23 15:21:01
-
The fox and the hound: in-depth and in-grain Na doping and Ga grading in Cu(In,Ga)Se <sub/>2</sub> solar cells
摘要： Cu(In,Ga)(S,Se)2 (CIGS) thin film solar cells require appropriate depth and lateral distributions of alkali metal dopants and gallium to attain world record photovoltaic energy conversion. The two requirements are interdependent because sodium is known to hamper In/Ga interdiffusion in polycrystalline films. However, such a fact is challenged by recent findings where sodium appears to enhance In/Ga interdiffusion in monocrystalline films. This contribution reviews closely the two cases to the benefits of grain boundary engineering in CIGS. A computational model reveals why Na induces In accumulation at CIGS grain boundaries, confining Ga to grain interiors. The positive technological implications for wider gap chalcopyrites are stressed.
关键词： sodium doping,gallium grading,CIGS,solar cells,grain boundary engineering
更新于2025-09-23 15:21:01
-
Potassium Treatments for Solution-Processed Cu(In,Ga)(S,Se) <sub/>2</sub> Solar Cells
摘要： Cu(In,Ga)(S,Se)2 (CIGSe, CIGSSe) has emerged as an attractive thin-film solar cell absorber material owing to its high light absorption coefficient and tunable bandgap. In CIGSSe processing and fabrication, the use of alkali treatments has been implemented as sodium doping is considered a requirement for high efficiency CIGSSe solar cell devices and has been used extensively. One of the more significant developments in recent years has been the discovery of the beneficial effects that potassium post-deposition treatments have on vacuum-processed CIGSSe solar cells as they are responsible for a major increase in CIGSSe solar cell performance. Here, we conduct a study of the effect of potassium treatments to solution-processed CIGSSe films grown from colloidal sulfide-based nanoparticle inks. By adding potassium through e-beam evaporation of KF prior to selenization and grain growth, we find that the grain growth of CIGSSe is enhanced with potassium addition and that a larger-grained film results compared to untreated selenized CIGSSe film, similar to what is observed in sodium-treated films. We also observe through XPS that films treated with K show the presence of the high-bandgap K-In-Se surface phase. Fabricating devices, we find that films that have been subjected simultaneously to both sodium and potassium treatments have enhanced optoelectronic performance mainly manifested in higher open-circuit voltage and higher short-circuit current.
关键词： CIGS,alkali treatment,Cu(In,Ga)(S,Se)2,solution-processed solar cells,potassium fluoride,chalcopyrite solar cell,sodium fluoride
更新于2025-09-23 15:21:01
-
Thin-Film Solar Cells
摘要： Copper-indium-gallium-diselenide (CIGS) thin-film solar cells suffer from high recombination losses at the back contact and parasitic absorption in the front-contact layers. Dielectric passivation layers overcome these limitations and enable an efficient control over interface recombination, which becomes increasingly relevant as thin-film solar cells increase in efficiency and become thinner to reduce the consumption of precious resources. We present the optoelectronic and chemical interface properties of oxide-based passivation layers deposited by atomic layer deposition on CIGS. A suitable postdeposition annealing removes detrimental interface defects and leads to restructuring and oxidation of the CIGS surface. The optoelectronic interface properties are very similar for different passivation approaches, demonstrating that an efficient suppression of interface states is possible independent of the metal used in the passivating oxide. If aluminum oxide (Al2O3) is used as the passivation layer we confirm an additional field-effect passivation due to interface charges, resulting in an efficient interface passivation superior to that of a state-of-the-art cadmium-sulfide (CdS) buffer layer. Based on this chemical interface model we present a full-area rear-interface passivation layer without any contact patterning, resulting in a 1% absolute efficiency gain compared to a standard molybdenum back contact.
关键词： CIGS,CdS,atomic layer deposition,oxidation,thin-film solar cells,recombination losses,Al2O3,interface passivation
更新于2025-09-23 15:21:01