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- 实验方案
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Electrical and optical properties of organic light-emitting diodes with rhenium(I) complexes using DC and AC methods
摘要: Four rhenium(I) tricarbonyl complexes with 1,10-phenanthroline and derivative bearing electron-donating CH3 and OCH3 substituents were doped into host material poly (9-vinylcarbazole) (PVK) with a mass ratio of 8% as the emissive layer in organic light-emitting diodes (OLEDs). All complexes showed photoluminescence in the solution and embedded into a PVK matrix (λmax~520–550 nm). The comparison with the bare PVK emission and the compound/PVK ?lm shows that the emission of the polymer was quenched through an energy transfer process from PVK to the dopant. The electrical properties of the devices with FTO/PEDOT:PSS/Complex:PVK/Al architecture were investigated using the DC method by curves of current density-voltage and the AC method as admittance spectroscopy, which showed that the behavior of the devices is controlled by charge carrier injection rather than bulk transport.
关键词: Energy transfer,Re(I) complexes,Charge injection,Admittance spectroscopy,Emission,OLEDs
更新于2025-11-14 17:28:48
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Hierarchical ZnO microspheres embedded in TiO2 photoanode for enhanced CdS/CdSe sensitized solar cells
摘要: Control of structural and compositional characteristics of photoanodes is a crucial step toward rapid transport of charges and high efficiency loading of dye or quantum dots in case of solar cell application. A hierarchical ZnO microspheres (ZMS) and TiO2 hybrid photoanode film was prepared for improved CdS/CdSe quantum dot sensitized solar cells (QDSCs). The addition of ZMS into TiO2 electrode films resulted in both increased short circuit current density (Jsc) and open circuit voltage (Voc). Such an improvement is ascribed to the increased light harvesting owing to scattering by ZMS and the reduced charge recombination due to the surface modification. TiO2/ZMS hybrid photoanode displays superior charge injection/transport performance due to the ZMS with unique hierarchical structure, providing charge transfer continuity and multiple electron transport channels for timely electron transport. As a result, the Jsc, Voc, and the photovoltaic conversion efficiency (PCE) were all remarkably enhanced with the insertion of hierarchical ZMS though varied appreciably with the amount of ZMS. Thus, the designed TiO2/ZMS heterostructure based QDSCs with an optimizing ZMS ratio of 20 wt% achieved a PCE of 5.99%, which is about 35% increase of the efficiency for the devices without ZMS (4.45%).
关键词: electron transport,ZnO microspheres,charge injection,quantum dot-sensitized solar cells,photoanode,light scattering
更新于2025-11-14 17:04:02
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Design and Simulation of Novel Gated Integrator for the Heavy ion Beam Monitors System
摘要: In this study, the objective is to realize a Gated Integrator (GI) circuit for silicon strip, Si(Li), CdZnTe and CsI detectors etc. With the development of radioactive ion beam physics, heavy-charged particles like carbon ions have been applied to the treatment of deep-seated inoperable tumors in the therapy terminal of the Heavy ion Research Facility in Lanzhou (HIRFL) located at the Institute of Modern Physics (IMP), Chinese Academy of Sciences (CAS). A high resolution current measurement circuit was developed to monitor the beam current at 1pA range. The circuit consisted of a low current high sensitivity I/V converter and gated integrator in an energy spectroscopy. A low offset voltage precision amplifier and new guarding and shielding techniques were used in the I/V converter circuit which allowed to measure low current. This paper will show a MOS switch configuration which is used to prevent leakage current and novel technique to compensate a charge injection in the reset switch.
关键词: Noise,Gated Integrator,Energy Spectroscopy,Leakage Current Prevention,Charge Injection
更新于2025-09-23 15:23:52
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Application of rubrene air-gap transistors as sensitive MEMS physical sensors
摘要: Micro electromechanical systems (MEMS) made of organic materials have attracted efforts on development a new generation of physical, chemical and biological sensors, for which the electromechanical sensitivity is the current major concern. Here, we present an organic MEMS made of a rubrene single crystal air-gap transistor. Applying mechanical pressure on the semiconductor results in high variations of drain current: an unparalleled Gauge factor above 4000 has been measured experimentally. Such a high sensitivity is induced by the modulation of charge injection at the interface between the gold electrode and the rubrene semiconductor as an unusual transducing effect. Applying these devices to the detection of acoustic pressure shows that force down to 230 nN can be measured with a resolution of 40 nN. This study demonstrates that MEMS based on rubrene air-gap transistors constitute a step forward to the development of high performance flexible sensors.
关键词: crystal,charge injection,organic MEMS,pressure sensor,air-gap transistor,OFET,rubrene
更新于2025-09-23 15:21:21
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Polarization and charge carrier density coupling in epitaxial PbZr <sub/>0.2</sub> Ti <sub/>0.8</sub> O <sub/>3</sub> /ZnO heterostructures
摘要: The integration of ferroelectric materials with semiconductor heterostructures can greatly enhance the functionality of electronic devices, provided the ferroelectric material retains a significant part of its switchable polarization. This work reports polarization switching in epitaxial PbZr0.2Ti0.8O3/ZnO/GaN heterostructures grown on c-cut sapphire single-crystal substrates. The electrical measurements of PbZr0.2Ti0.8O3/ZnO ferroelectric/semiconductor capacitors reveal an unexpected difference between a counterclockwise ferroelectric hysteresis loop and a clockwise C-V loop. A non-linear hysteretic behavior of the capacitance is observed in the voltage range that is at least 3 times narrower than the range of ferroelectric polarization switching voltages. This difference can be explained by charge injection effects at the interface between ferroelectrics and semiconductors. The interaction between electric polarization and the electronic structure of the heterojunction leads to capacitance and charge carrier concentrations that are switchable by polarization of the ferroelectric layer. These findings are important for both fundamental and applied research of switchable and highly tunable ferroelectric/semiconductor heterostructures.
关键词: ferroelectric materials,polarization switching,charge injection effects,capacitance,semiconductor heterostructures
更新于2025-09-23 15:21:01
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Suppressing Efficiency Roll-Off at High Current Densities for Ultra-Bright Green Perovskite Light-Emitting Diodes
摘要: Perovskite light-emitting diodes (PeLEDs) have undergone rapid development in the last several years with external quantum efficiencies (EQE) reaching over 21%. However, most PeLEDs still suffer from severe efficiency roll-off (droop) at high injection current densities, thus limiting their achievable brightness and presenting a challenge to their use in laser diode applications. In this work, we show that the roll-off characteristics of PeLEDs are affected by a combination of charge injection imbalance, nonradiative Auger recombination, and Joule heating. To realize ultrabright and efficient PeLEDs, several strategies have been applied. First, we designed an energy ladder to balance the electron and hole transport. Second, we optimized perovskite materials to possess reduced Auger recombination rates and improved carrier mobility. Third, we replaced glass substrates with sapphire substrates to better dissipate joule heat. Finally, by applying a current-focusing architecture, we achieved PeLEDs with a record luminance of 7.6 Mcd/m2. The devices can be operated at very high current densities (J) up to ~ 1 kA/cm2. Our work suggests a broad application prospect of perovskite materials for high-brightness LEDs and ultimately a potential for solution-processed electrically pumped laser diodes.
关键词: Joule heat,efficiency roll-off,Auger recombination,charge injection balance,high injection current density,ultrahigh brightness,perovskite light emitting diodes
更新于2025-09-23 15:19:57
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Experimentally Calibrated Kinetic Monte Carlo Model Reproduces Organic Solar Cell Currenta??Voltage Curve
摘要: Kinetic Monte Carlo simulations are used to describe the current-voltage characteristics of an organic bulk heterojunction solar cell. Excellent agreement between model and experiment is obtained by calibrating the injection barriers, the blend morphology and the charge transfer recombination rate with data from independent measurement techniques.
关键词: organic photovoltaics,charge recombination,Kinetic Monte Carlo simulations,morphology,charge injection
更新于2025-09-23 15:19:57
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Organic thin-film transistors with flame-annealed contacts
摘要: Reducing contact resistance is critical to developing high-performance organic field-effect transistors (OFETs) since it impacts both the device mobility and switching speed. Charge injection and collection has been optimized by applying chemical treatments to the contacts, such as self-assembled monolayers, oxide interlayers, or dopants. Here, we tested how flame annealing the surface of the electrodes impacts the interface and bulk components of the contact resistance, as well as the overall device performance. A butane micro torch was used to flash-anneal the gold electrodes, which allowed gold grains to crystallize into larger domains. We found that, along with the grain size, the surface roughness of the contacts was also increased. Self-assembled monolayer treatment created a lower work function shift on a flame annealed electrode than when deposited on an untreated surface, due to the greater surface roughness. This resulted in a larger interface contact resistance. However, flame annealing also produced an order of magnitude reduction in the density of trap states in the semiconductor layer, which reduced the bulk contact resistance and channel resistance. These competing effects yielded OFETs with similar performance as untreated devices.
关键词: charge injection,contact resistance,organic field-effect transistor
更新于2025-09-23 15:19:57
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Solution-processed blue quantum-dot light-emitting diodes based on double hole transport layers: Charge injection balance, solvent erosion control and performance improvement
摘要: Solution processed quantum-dot based light emitting diodes (QLEDs) usually suffer from the issues of imbalanced carrier injection (especially for blue QLEDs) and solvent erosion, which prevents these devices from reaching high performance. Here we report a simple and effective method of promoting hole injection and mitigating solvent erosion simultaneously for fabricating high-performance blue QLEDs. Poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4′-(N-(p-butylphenyl))-diphenylamine)] (TFB)/Lithium bis(trifluoromethanesulfonimide) (Li-TFSI)-doped poly(9-vinlycarbazole) (PVK) bi-layers with smooth surfaces/interfaces, prepared via a solution-process by utilizing 1,4-dioxane as the solvent for PVK, were used as hole transport layers (HTLs) for improving the performance of blue QLEDs. The TFB/Li-doped PVK based QLED records 5829 cd/m2 of maximum brightness and 5.37% of peak EQE, which represents 1.1-fold increase in brightness and ~11.5-fold increase in EQE as compared with the devices based on TFB-only HTLs. The enhanced performance for these TFB/Li-doped PVK based QLEDs can be ascribed to more efficient hole injection offered by Li-doped bilayer HTLs with smooth surfaces/interfaces and stepwise energy level alignment. The CIE 1931 color coordinates (0.15, 0.03) for these TFB/Li-doped PVK based QLEDs are close to the National Television System Committee (NTSC) standard blue CIE coordinates, showing promise for use in next-generation full-color displays. This work provides a facile solution method of fabricating TFB/Li-doped PVK bi-layers with smooth surfaces/interfaces and proves the superiority of these TFB/Li-doped PVK bi-layered HTLs in hole transport and injection for high-performance blue QLEDs.
关键词: double hole transport layers,blue quantum-dot light-emitting diodes,charge injection;Lithium salt doped hole transport layer,solvent erosion,solution processability
更新于2025-09-23 15:19:57
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Highly Efficient UV–Visible Photocatalyst from Monolithic 3D Titania/Graphene Quantum Dot Heterostructure Linked by Aminosilane
摘要: As rapidly growing environmental pollution demands the development of efficient photocatalytic materials, tremendous attention has been drawn to TiO2, a widely used photocatalytic material with cost-effectiveness, stability, and outstanding reactivity. To maximize its photocatalytic efficiency by enhancing the photogenerated charge separation, lowering the intrinsically large bandgap (3.2 eV) of TiO2 is a key problem to be overcome. Herein, a new design is reported for an efficient photocatalyst realized by heterostructuring a 3D nanostructured TiO2 monolith (3D TiO2) and graphene quantum dots (GQDs) through using 3-aminopropyltriethoxysilane (APTES) as a linker. The incorporation of APTES between the TiO2/GQD interface enables the formation of a charge injection-type heterostructure, as confirmed by transient absorption spectroscopy, providing improvement of both visible absorption and charge separation. As a result, the heterostructure exhibits a 242% enhanced photocatalytic performance compared to that of nonheterostructured 3D TiO2 under visible irradiation, demonstrating its promising potential for practical photocatalytic applications in environmental remediation.
关键词: TiO2/GQD heterostructure,graphene quantum dots,visible light photocatalysis,charge injection,3D nanostructured TiO2
更新于2025-09-19 17:13:59