研究目的
To realize a Gated Integrator (GI) circuit for silicon strip, Si(Li), CdZnTe and CsI detectors, and develop a high resolution current measurement circuit to monitor beam current at 1pA range for heavy ion beam monitors.
研究成果
The designed gated integrator circuit achieved high linearity and reduced charge injection to 0.7 mV using novel switch configurations and compensation techniques. Simulation results showed effective noise reduction with slow change clocks, making it suitable for high-resolution energy systems in heavy ion beam monitors.
研究不足
The study is based on simulations using PSPICE, which may not fully capture real-world conditions. Experimental validation with physical hardware is not described, and the circuit's performance in actual beam monitoring environments may have additional constraints.
1：Experimental Design and Method Selection:
The study involved designing a gated integrator circuit using PSPICE simulator for simulation. The design focused on preventing leakage current and compensating charge injection in MOS switches.
2：Sample Selection and Data Sources:
Input current signals were supplied using a streaming signal generator XLV1 associated with a voltage controlled current source.
3：List of Experimental Equipment and Materials:
Equipment included PSPICE simulator, streaming signal generator XLV1, voltage controlled current source, operational amplifiers, capacitors, resistors, and MOSFET switches.
4：Experimental Procedures and Operational Workflow:
Simulations were conducted to characterize DC and AC performances, including linearity tests and noise analysis. The circuit was tested with DC mode source current.
5：Data Analysis Methods:
Data from simulations were analyzed to evaluate linearity, noise, offset voltage, and charge injection effects using PSPICE tools.
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