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Application of perovskite nanocrystals (NCs)/quantum dots (QDs) in solar cells
摘要： Since it was first reported in 2014, colloidal halide perovskite (CHP) nanocrystals (NCs)/quantum dots (QDs) have been quickly applied in photovoltaic devices, and useful results have been obtained due to their excellent optoelectronic properties. In this review, we aim to summarize the progresses in this field up to now, and propose solutions to the development bottlenecks. Generally, we will first introduce crystal/electronic structures, optoelectronic properties and stabilities, and the synthesis methods of CHP NCs/QDs, followed by their applications in solar cell as active layer, interfacial layer, additive and energy transfer layer. Finally, we will briefly discuss the stability challenges for CHP NCs/QDs, and make a simple prospect for the possible directions of CHP NCs/QDs in future solar cell applications.
关键词： Quantum dots,Ligand,Passivation,Doping,Solar cell,Nanocrystals
更新于2025-09-23 15:21:01
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In Situ SiO <sub/>2</sub> Passivation of Epitaxial (100) and (110)InGaAs by Exploiting TaSiO <sub/><i>x</i> </sub> Atomic Layer Deposition Process
摘要： In this work, an in situ SiO2 passivation technique using atomic layer deposition (ALD) during the growth of gate dielectric TaSiOx on solid-source molecular beam epitaxy grown (100)InxGa1?xAs and (110)InxGa1?xAs on InP substrates is reported. X-ray reciprocal space mapping demonstrated quasi-lattice matched InxGa1?xAs epitaxy on crystallographically oriented InP substrates. Cross-sectional transmission electron microscopy revealed sharp heterointerfaces between ALD TaSiOx and (100) and (110)InxGa1?xAs epilayers, wherein the presence of a consistent growth of an ～0.8 nm intentionally formed SiO2 interfacial passivating layer (IPL) is also observed on each of (100) and (110)InxGa1?xAs. X-ray photoelectron spectroscopy (XPS) revealed the incorporation of SiO2 in the composite TaSiOx, and valence band offset (ΔEV) values for TaSiOx relative to (100) and (110)InxGa1?xAs orientations of 2.52 ± 0.05 and 2.65 ± 0.05 eV, respectively, were extracted. The conduction band offset (ΔEC) was calculated to be 1.3 ± 0.1 eV for (100)InxGa1?xAs and 1.43 ± 0.1 eV for (110)InxGa1?xAs, using TaSiOx band gap values of 4.60 and 4.82 eV, respectively, determined from the fitted O 1s XPS loss spectra, and the literature-reported composition-dependent InxGa1?xAs band gap. The in situ passivation of InxGa1?xAs using SiO2 IPL during ALD of TaSiOx and the relatively large ΔEV and ΔEC values reported in this work are expected to aid in the future development of thermodynamically stable high-κ gate dielectrics on InxGa1?xAs with reduced gate leakage, particularly under low-power device operation.
关键词： in situ SiO2 passivation,atomic layer deposition,InxGa1?xAs,band alignment,TaSiOx,gate dielectric
更新于2025-09-23 15:21:01
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Fabrication of bifacial sandwiched heterojunction photoconductor a?? Type and MAI passivated photodiode a?? Type perovskite photodetectors
摘要： In this work, we report novel heterojunctions perovskite photodetector architecture utilizing metal-free contact electrodes. The metal-free contact electrodes were exploited to fabricate photoconductor – type perovskite photodetector. The attempt to investigate the effect of passivating the active layers of the as – proposed architecture with electrolytic MAI gave rise to a photodiode – type perovskite photodetector. These two photodetector types are sensitive and responsive to light sources through their dual transparent electrodes faces (N-face and T-face). We also showed that passivating the surfaces of the sandwiched perovskite layers with MAI solution improves the performance of the fabricated photodetectors, where the detectivity is enhanced by a factor of hundred compared to non-passivated devices. The proposed photodetectors architectures demonstrate champion dual-detectivity (1.77×1014 Jones for N-face and 4.64 × 1014 Jones for T-face), dual-responsivity (1.94 × 103 A/W for N-face and 1.61 × 103 A/W for T-face) and high dual – sensitivity (3.3 × 102 for N-face and 1.1 × 102 for T-face). All these properties were obtained from the two faces of the MAI passivated photodetectors under 0.02 mW/cm2 red LED illumination and at -2.0 bias voltage. This novel architecture may scale up towards building energy and cost efficient classes of optoelectronic and photovoltaic devices which are responsive to light in two directions.
关键词： MAI Passivation,Bifacial,Photoconductor,Perovskites,Photodetectors,Photodiode
更新于2025-09-23 15:21:01
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Calcium-tributylphosphine oxide passivation enables the efficiency of pure-blue perovskite light-emitting diode up to 3.3%
摘要： Metal halide perovskites are attractive for light-emitting diodes due to their superior optoelectronic properties such as tunable bandgaps, high photoluminescence quantum yields (PLQYs), high color purities and solution processability. In the past several years, impressive progress has been made in perovskite light-emitting diodes (PeLEDs) via microstructure engineering, charge balancing, surface defect passivation, metal ion doping and dimensional engineering. As such, the green, red and near-infrared PeLEDs have achieved impressive external quantum efficiencies (EQEs) exceeding 20%. However, the performances of pure-blue PeLEDs, i.e., brightness and EQEs, still lag largely behind those of the green and red counterparts, which severely impedes the PeLED application in full-color display and solid-state lighting.
关键词： passivation,pure-blue,perovskite,calcium-tributylphosphine oxide,light-emitting diode
更新于2025-09-23 15:21:01
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Lithography-free and dopant-free back-contact silicon heterojunction solar cells with solution-processed TiO2 as the efficient electron selective layer
摘要： Lithography-free interdigitated back-contact silicon heterojunction (IBC-SHJ) solar cells with dopant-free metal oxides (TiO2 and MoOx) as the carriers selective transport layers were investigated. Spin-coating and hot-wire reactive-sublimation deposition together with low cost mask technology were used to fabricate the solar cells. Insertion of a SiOx layer with the thickness of about 2.4 nm between the intrinsic amorphous Si (a-Si:H(i)) passivation layer and the spin-coated TiO2 layer greatly improves the solar cell performance due to the enhanced field-effect passivation of the a-Si:H(i)/SiOx/TiO2 layer stack. Efficiency up to 20.24% was achieved on the lithography-free and dopant-free IBC-SHJ devices with a-Si:H(i)/SiOx/TiO2 layer stack as the electron selective transport layer, a-Si:H(i)/MoOx as the hole selective transport layer, and WOx as the antireflection layer. The novel IBC-SHJ solar cells show significant advantages in simplification of the technology and process compared with the IBC-SHJ devices whose back surface pattering and carrier selective layers relied on photolithography and plasma enhanced chemical vapor deposition (PECVD).
关键词： Heterojunction,Dopant-free,Back-contact,Lithography-free,Passivation
更新于2025-09-23 15:19:57
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Laser firing in silicon heterojunction interdigitated back contact architecture for low contact resistance
摘要： This work reports a laser firing technique applied to completed silicon heterojunction interdigitated back contact solar cells in order to lower contact resistance. Previously, the implementation of a-Si:H(i) at the electron contact of polycrystalline silicon solar cells on glass substrates led to an increase in series resistance. The cell architecture with the current record efficiency of 14.2% (with illumination through glass) utilizes only an a-Si:H(nt) layer (cid:0) 2 of short circuit current density is lost due to electrical shading under the electron contact and 2–2.9 mA cm [1,2]. The goal of implementing an a-Si:H(i) layer and laser firing at this contact is to achieve low contact resistance at fired spots while preserving a-Si:H(i) passivation in unfired regions. After the laser firing, VOC was (cid:0) 2 loss in JSC. In the best retained, while up to 14% absolute increase in FF was obtained with a mere 0.2 mA cm (cid:0) 2 loss in JSC. Two laser sources were used to first performing cell, a 72.1% FF was achieved with a 0.7 mA cm ablate a part of the silver contact metal, and then to laser fire through the Si(n)/a-Si:H(i/nt)/ITO/Ag contact. (cid:0) 2 (355 nm, picosecond pulse duration) and The optimal laser fluence was found to be 1.1–0.5 J cm (cid:0) 2 (532 nm, nanosecond pulse duration), respectively. The upper limit on specific contact resistance 4.4–5.2 J cm in the laser fired spots was calculated to be 38 ? 20 mΩcm2 as a conservative estimate.
关键词： Liquid phase crystallized silicon,Passivation,Interdigitated back contact,Foreign substrates,Laser fired contacts,Silicon heterojunction
更新于2025-09-23 15:19:57
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An Efficient and Stable Tin-Based Perovskite Solar Cells Passivated by Aminoguanidine Hydrochloride
摘要： It is challenging to simultaneously fabricate high-performance and stable Sn-based perovskite device owing to the inferior Sn-based perovskite film and the fast oxidation of Sn2+. Herein, a simple approach was employed by adding an additive of aminoguanidine hydrochloride (NH2GACl) in perovskite precursor solution to prepare efficient Sn-based perovskite solar cells. The higher film quality was obtained due to the formation of strong hydrogen bonding between halide ions in the perovskite and NH2GACl, which helps to passivate the defects and lessen Sn2+ oxidation. In addition, NH2GACl addition can effectively adjust the energy level alignment between Sn-based perovskite and adjacent layer to facilitate the charge transportation. The perovskite device modified with NH2GACl achieved a power conversion efficiency up to 7.3%, retaining 90% of its initial efficiency after 30 days in a nitrogen glovebox without encapsulation.
关键词： aminoguanidine hydrochloride,Sn-based perovskite,stability,passivation,solar cells
更新于2025-09-23 15:19:57
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Hydrogenation behaviors in passivated emitter and rear silicon solar cells with variously hydrogenated SiNx films
摘要： From the point of view in sustainable energy, photovoltaic (PV) technology has been recognized as one of the most suitable solutions to replace fossil fuel technologies for electrical generation. However, in PV modules, 95% of solar cells made from P-type boron doped CZ-grown silicon substrates have a reliability issue, called light induced degradation (LID), which strongly affects their practically long-term use. Carrier induced hydrogenation (CIH) is one of the solutions through injection of excess carrier into Si solar cells with moderate thermal treatment. The mechanism of CIH process is the passivation of B-O related defects by hydrogen atoms with negative charge state. In the report, we can find the efficiency enhancement of commercial passivated emitter and rear cells (PERC) by hydrogenated silicon nitride (SiNx:H) films which were prepared by plasma-enhanced chemical vapor deposition and released hydrogen for Si passivation. In order to understand the behaviors of hydrogenation in Si solar cells, we manipulate the amount of hydrogen effused from the rear SiNx:H layers into the silicon substrate. A quadratic trend of average conversion efficiency gain for solar cells was observed after CIH treatment process. The mechanism of hydrogenation for PERC, including carrier induced hydrogenation and excess-hydrogen induced degradation, was investigated.
关键词： hydrogen induced degradation,silicon solar cells,hydrogen passivation,light induced degradation
更新于2025-09-23 15:19:57
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CZTS solar cells and the possibility of increasing VOC using evaporated Al2O3 at the CZTS/CdS interface
摘要： We report the effect of an ultra-thin Al2O3 layer (down to 3 nm) as interface passivation strategy for the improvement of the performance of Cu2ZnSnS4/CdS based solar cells. After an initial optimization, the Al2O3 deposited by thermal evaporation is proved to improve the properties of the p-n junction. The fabricated devices showed an increment in Voc depending on the composition of the absorber, and an improvement in fill factor (FF) apparently related to the insulation of possible shunt-paths. Also, the impact on other optoelectronic parameters is discussed.
关键词： Al2O3,Interface passivation,Thermally evaporation,Cu2ZnSnS4 (CZTS)
更新于2025-09-23 15:19:57
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Efficient Defect Passivation of Sb <sub/>2</sub> Se <sub/>3</sub> Film by Tellurium Doping for High Performance Solar Cells
摘要： Defect in a semiconductor dictates carrier transport and recombination, which is one of the critical factors that influences the power conversion efficiency in solar cells. In this study, we demonstrate that the introduction of tellurium is able to fine tune the atomic ratio of Se/Sb in Sb2Se3 thin film, both Se-rich and Sb-rich Sb2Se3 are well obtained. On the ground of device fabrication and deep level defect spectroscopy characterization, we experimentally disclose that Se-rich Sb2Se3 favors the formation of SeSb and VSb defects, while Sb-rich condition benefits the formation of SbSe and VSe defects. With appropriately excess Se in Sb2Se3, a net efficiency improvement of 2% is obtained when compared with the pristine Sb2Se3 based solar cells. Our study provides an effective strategy to manipulate the defect formation in Sb2Se3 solar cell and inspires further improvement in the efficiency of Sb2Se3 solar cells.
关键词： Sb2Se3,defect passivation,tellurium doping,solar cells,carrier transport
更新于2025-09-23 15:19:57