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Solution-processed P3HT:PbS based NIR Photodetector with FET Configuration
摘要： A near-infrared (NIR) solution-processed photodetector based on a mixture of PbS colloidal quantum dots (CQDs) and Poly(3-hexylthiophene) (P3HT) was presented. In a reverse field-effect transistor (FET) device configuration Au(S,D)/P3HT:PbS/PMMA/Al(G), uniform-sized and well-dispersed PbS CQDs were employed as NIR absorbing materials in the active layer. Meanwhile, the poly(methyl methacrylate) (PMMA) dielectric layer could be seen as an encapsulation to enhance the device stability. Herein, High “on/off” current ratio (Ion/Ioff) of 104 was obtained in dark, and the maximum photosensitivity (P) of 947 was gotten under 200 mW/cm2 980 nm illumination. When the irradiance reduced to 0.1 mW/cm2, the responsivity (R) and detectivity (D?) of the NIR photodetector reached 9.4 mA/W and 2.5×1011 Jones, respectively. Therefore, the P3HT:PbS hybrid FET-based NIR photodetector had shown both relatively high electrical and detecting performance, which provided an experimental foundation and method for the next fabrication of medical infrared detectors and sensors.
关键词： PbS colloidal quantum dots (CQDs),Near-infrared (NIR) photodetector,Poly(3-hexylthiophene) (P3HT),Field-effect transistor (FET)
更新于2025-09-16 10:30:52
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All-solution-processed UV-IR broadband trilayer photodetectors with CsPbBr3 colloidal nanocrystals as carriers-extracting layer
摘要： Colloidal quantum dots (CQDs) are very promising nanomaterials for optoelectronics due to their tunable bandgap and quantum confinement effect. Especially, all-inorganic CsPbX3 (X=Br, Cl and I) perovskite nanocrystals (NCs) have attracted enormous interests owing to their promising and exciting applications in photovoltaic devices. In this paper, all-solution-processed broadband photodetectors ITO/ZnO/CsPbBr3/PbS/Au with high-performance were presented. The role of CsPbBr3 QDs layer as the carriers-extracting layer in the trilayer devices was discussed. As compared with bilayer device ITO/ZnO/PbS/Au, both the dark currents and photocurrents under illumination from UV-IR broadband trilayer photodetector ITO/ZnO(80nm)/PbS(150nm)/CsPbBr3(50nm)/Au are enhanced, but the trilayer photodetector ITO/ZnO(80nm)/CsPbBr3(50nm)/PbS(150nm)/Au showed a maximum specific detectivity (D*) of 1.73×1012 Jones with a responsivity (R) of 5.31 A/W under 6.8 mW/cm2 405 nm illumination. However, another trilayer photodetector ITO/ZnO(80nm)/PbS(150nm)/CsPbBr3(50nm)/Au showed a maximum D* of 8.3×1012 Jones with a R of 35 A/W under 1.6 mW/cm2 980 nm illumination. Further, the underlying mechanism for the enhanced performance of trilayer photodetectors was discussed. Thus, this strategy of all-solution-processed heterojunction configuration paves a facile way for broadband photodetectors with high-performance.
关键词： broadband photodetectors,all-solution-processed heterojunction,Colloidal quantum dots (CQDs),CsPbBr3 perovskite nanocrystals,carrier-extraction layer
更新于2025-09-12 10:27:22