研究目的
Investigating the role of CsPbBr3 colloidal nanocrystals as carriers-extracting layer in all-solution-processed UV-IR broadband trilayer photodetectors.
研究成果
The study successfully demonstrated all-solution-processed UV-IR broadband trilayer photodetectors with high performance by inserting CsPbBr3 QDs thin layer as carriers-extracting layer. The configuration opens up a facile method to fabricate UV-IR broadband high-performance optoelectronics.
研究不足
The study is limited by the need for further optimization of device configuration and the thickness of each active layer. Additionally, more detailed information on the interface of two QDs layers should be investigated.
1:Experimental Design and Method Selection:
The study involved the fabrication of all-solution-processed trilayer photodetectors with CsPbBr3 colloidal nanocrystals as the carriers-extracting layer. The devices were characterized under UV-IR broadband illumination.
2:Sample Selection and Data Sources:
The samples included ITO/ZnO/PbS/CsPbBr3/Au and ITO/ZnO/CsPbBr3/PbS/Au configurations. Data were collected under 405 nm and 980 nm laser illumination.
3:List of Experimental Equipment and Materials:
Materials included CsPbBr3 NCs, PbS QDs, ZnO NPs, and Au electrodes. Equipment included a Keithley semiconductor characterization system for electrical measurements.
4:Experimental Procedures and Operational Workflow:
Devices were fabricated by spin-coating and characterized under dark and illuminated conditions to measure photocurrent and dark current.
5:Data Analysis Methods:
The performance was evaluated based on photosensitivity (P), responsivity (R), and specific detectivity (D*).
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