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-doped two-dimensional semiconductor quantum wells
摘要： We present a theoretical study of photoabsorption in n-doped two-dimensional (2D) and quasi-2D semiconductors that takes into account the interaction of the photocreated exciton with Fermi-sea (FS) electrons through (i) Pauli blocking, (ii) Coulomb screening, and (iii) excitation of FS electron-hole pairs—that we here restrict to one. The system we tackle is thus made of one exciton plus zero or one FS electron-hole pair. At low doping, the system ground state is predominantly made of a 'trion-hole'—a trion (two opposite-spin electrons plus a valence hole) weakly bound to a FS hole—with a small exciton component. As the trion is poorly coupled to photon, the intensity of the lowest absorption peak is weak; it increases with doping, thanks to the growing exciton component, due to a larger coupling between two-particle and four-particle states. Under a further doping increase, the trion-hole complex is less bound because of Pauli blocking by FS electrons, and its energy increases. The lower peak then becomes predominantly due to an exciton dressed by FS electron-hole pairs, that is, an exciton-polaron. As a result, the absorption spectra of n-doped semiconductor quantum wells show two prominent peaks, the nature of the lowest peak turning from trion-hole to exciton-polaron under a doping increase. Our work also nails down the physical mechanism behind the increase with doping of the energy separation between the trion-hole peak and the exciton-polaron peak, even before the anticrossing, as experimentally observed.
关键词： Fermi sea,trion-hole complex,exciton-polaron,photoabsorption,Pauli blocking,n-doped semiconductors,Coulomb screening
更新于2025-09-23 15:23:52
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Dodecaborane-Based Dopants Designed to Shield Anion Electrostatics Lead to Increased Carrier Mobility in a Doped Conjugated Polymer
摘要： One of the most effective ways to tune the electronic properties of conjugated polymers is to dope them with small-molecule oxidizing agents, creating holes on the polymer and molecular anions. Undesirably, strong electrostatic attraction from the anions of most dopants localizes the holes created on the polymer, reducing their mobility. Here, a new strategy utilizing a substituted boron cluster as a molecular dopant for conjugated polymers is employed. By designing the cluster to have a high redox potential and steric protection of the core-localized electron density, highly delocalized polarons with mobilities equivalent to films doped with no anions present are obtained. AC Hall effect measurements show that P3HT films doped with these boron clusters have conductivities and polaron mobilities roughly an order of magnitude higher than films doped with F4TCNQ, even though the boron-cluster-doped films have poor crystallinity. Moreover, the number of free carriers approximately matches the number of boron clusters, yielding a doping efficiency of ≈100%. These results suggest that shielding the polaron from the anion is a critically important aspect for producing high carrier mobility, and that the high polymer crystallinity required with dopants such as F4TCNQ is primarily to keep the counterions far from the polymer backbone.
关键词： mobility,molecular dopants,Coulomb screening,semiconducting polymers,dodecaboranes
更新于2025-09-19 17:15:36
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Coulomb scattering mechanism transition in 2D layered MoTe <sub/>2</sub> : effect of high- <i>κ</i> passivation and Schottky barrier height
摘要： Clean interface and low contact resistance are crucial requirements in two-dimensional (2D) materials to preserve their intrinsic carrier mobility. However, atomically thin 2D materials are sensitive to undesired Coulomb scatterers such as surface/interface adsorbates, metal-to-semiconductor Schottky barrier (SB), and ionic charges in the gate oxides, which often limits the understanding of the charge scattering mechanism in 2D electronic systems. Here, we present the effects of hafnium dioxide (HfO2) high-κ passivation and SB height on the low-frequency (LF) noise characteristics of multilayer molybdenum ditelluride (MoTe2) transistors. The passivated HfO2 passivation layer significantly suppresses the surface reaction and enhances dielectric screening effect, resulting in an excess electron n-doping, zero hysteresis, and substantial improvement in carrier mobility. After the high-κ HfO2 passivation, the obtained LF noise data appropriately demonstrates the transition of the Coulomb scattering mechanism from the SB contact to the channel, revealing the significant SB noise contribution to the 1/f noise. The substantial excess LF noise in the subthreshold regime is mainly attributed to the excess metal-to-MoTe2 SB noise and is fully eliminated at the high drain bias regime. This study provides a clear insight into the origin of electronic signal perturbation in 2D electronic systems.
关键词： Coulomb screening,low-frequency noise,Schottky barrier height,molybdenum ditelluride,high-κ passivation
更新于2025-09-10 09:29:36
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Probing Distinctive Electron Conduction in Multilayer Rhenium Disulfide
摘要： Charge carrier transport in multilayer van der Waals (vdW) materials, which comprise multiple conducting layers, is well described using Thomas–Fermi charge screening (λTF) and interlayer resistance (Rint). When both effects occur in carrier transport, a channel centroid migrates along the c-axis according to a vertical electrostatic force, causing redistribution of the conduction centroid in a multilayer system, unlike a conventional bulk material. Thus far, numerous unique properties of vdW materials are discovered, but direct evidence for distinctive charge transport behavior in 2D layered materials is not demonstrated. Herein, the distinctive electron conduction features are reported in a multilayer rhenium disulfide (ReS2), which provides decoupled vdW interaction between adjacent layers and much high interlayer resistivity in comparison with other transition-metal dichalcogenides materials. The existence of two plateaus in its transconductance curve clearly reveals the relocation of conduction paths with respect to the top and bottom surfaces, which is rationalized by a theoretical resistor network model by accounting of λTF and Rint coupling. The effective tunneling distance probed via low-frequency noise spectroscopy further supports the shift of electron conduction channel along the thickness of ReS2.
关键词： Coulomb screening,charge conduction mechanism,multilayer,transport,anisotropy,rhenium disulfide
更新于2025-09-04 15:30:14