- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Magnetic-field-dependent quantum emission in hexagonal boron nitride at room temperature
摘要： Optically addressable spins associated with defects in wide-bandgap semiconductors are versatile platforms for quantum information processing and nanoscale sensing, where spin-dependent inter-system crossing transitions facilitate optical spin initialization and readout. Recently, the van der Waals material hexagonal boron nitride (h-BN) has emerged as a robust host for quantum emitters, promising efficient photon extraction and atom-scale engineering, but observations of spin-related effects have remained thus far elusive. Here, we report room-temperature observations of strongly anisotropic photoluminescence patterns as a function of applied magnetic field for select quantum emitters in h-BN. Field-dependent variations in the steady-state photoluminescence and photon emission statistics are consistent with a spin-dependent inter-system crossing between triplet and singlet manifolds, indicating that optically-addressable spin defects are present in h-BN.
关键词： photoluminescence,room temperature,quantum emitters,magnetic field,hexagonal boron nitride,spin defects
更新于2025-09-23 15:22:29
-
Effectiveness of phased array focused ultrasound and active infrared thermography methods as a nondestructive testing of Ni-WC coating adhesion
摘要： The substrate/coating adhesion is a crucial parameter conditioning the quality of coating and its durability in service. For this reason, an inspection of the coating integrity, in particular, the presence of adhesion defects will be of great importance. The adhesion inspection is usually ensured by destructive methods, such as traction, interfacial indentation, four-point bending, testing scratch, etc. However, it is currently hampered by the absence of a satisfactory non-destructive method. Among the non-destructive testing technologies widely used in the industrial field, there are X-ray diffraction, ultrasonic inspection, and infrared thermography. In this paper, two methods are investigated: ultrasonic inspection, which becoming more efficient, especially with the emergence of phased array systems that allow to investigate different inspection angles and focusing depths, and the active infrared thermography. Experiments were performed on metallic coatings deposited on a mild steel substrate. Coatings were containing artificial defects (flat bottom holes with different diameters) at the interface and others were exempts of defects. Longitudinal waves with specific delay laws were generated through a phased array contact transducer (5 MHz of central frequency). Experimental results show that the ultrasonic method allows detecting and sizing defects with a diameter of 1 mm located in thick coatings.
关键词： Substrate/coating adhesion,phased array,defects,detection,nondestructive testing,coating
更新于2025-09-23 15:22:29
-
The role of defects in the physical properties of mechanically activated PbTiO<sub>3</sub> ferroelectrics
摘要： In this work a multi-technique characterization was performed for the first time to trace the influence of structural defects on the physical properties of PbTiO3 ferroelectrics. The structural defects were generated by the mechanical activation in the pressure range of 40-320 MPa, by combining a uniaxial strain with a shear deformation in the Bridgman anvils. The induced defectivity of PbTiO3 was assessed via calculation of unit cell parameters, estimation of the regions of coherent scattering and analysis of micro-deformations. The Debye characteristic temperature, the static mean-square displacement, the Debye-Waller isotropic factor, the vibrational spectra and dielectric properties of the activated PbTiO3 are presented. The high-quality PbTiO3 ceramics was prepared without modifiers, hence, changing the concentration of structural defects via mechanical activation constitutes a chemically clean method for fine tuning of the dielectric properties of PbTiO3.
关键词： Bridgman anvils,PbTiO3,mechano-activation,defects
更新于2025-09-23 15:22:29
-
Hybrids made of defective nanodiamonds interacting with DNA nucleobases
摘要： The characteristics of hybrids made of a defective nanodiamond and a biomolecule unit are investigated in this work. Focus is given on the interaction between the nanodiamond and a DNA nucleobase. The latter is placed close to the former in two different arrangements, realizing different bonding types. The nanodiamond includes a negatively charged nitrogen-vacancy center and is hydrogen terminated. Using quantum-mechanical calculations, we could elucidate the structural and electronic properties of such hybrids. Our study clearly identifies the importance of the relative orientation of the two components, the nanodiamond and the nucleobase, in the complex in controlling the electronic properties of the resulting hybrid. The position of the defect at the center or closer to its interface with the nucleobase further controls the electronic orbitals around the defect center, hence its optical activity. In the end, we discuss the relevance of our work in biosensing.
关键词： electronic structure,defects,DFT,DNA,nanodiamond
更新于2025-09-23 15:22:29
-
Study of the effect of irradiation with Fe<sup>7+</sup> ions on the structural properties of thin TiO<sub>2</sub> foils
摘要： Thin foils based on the TiO2 phase of brookite, 620 nm thick, were obtained by magnetron sputtering. The samples were irradiated at the DC-60 heavy ion accelerator of the Astana branch of the Institute of Nuclear Physics with Fe7+ ions with an energy of 85 MeV with a fluence of 1×1011 to 1×1014 ions/cm2. The dependences of the change in the concentration of defects in the structure of thin films on the radiation dose are established. It has been established that an increase in the irradiation fluence of up to 1014 ions/cm2, characteristic of the formation of defect overlap regions, leads to a sharp decrease in the degree of crystallinity and an increase in the lattice parameters. That is caused by the formation of a large number of disorder regions and displaced atoms in the structure, which migrate along the crystal lattice to additional distortions and voltages, with the subsequent formation of hillocks.
关键词： ionizing radiation,thin foils,crystal structure defects,magnetron sputtering
更新于2025-09-23 15:22:29
-
Effect of codoping Ce <sup>3+</sup> on the luminescence properties of Sr <sub/>9</sub> Mg <sub/>1.5</sub> (PO <sub/>4</sub> ) <sub/>7</sub> :Eu <sup>2+</sup> orange-yellow phosphor
摘要： Sr9Mg1.5(PO4)7:Eu2+ has recently been reported as a promising blue light-excited orange-yellow phosphor that can be used in white LED device. Here, Ce3+-codoping is found to be an effective strategy to improve the luminescence performance of Sr9Mg1.5(PO4)7:Eu2+ phosphor. The coexistence of Eu2+ and Eu3+ ions has been verified via photoluminescence spectral analysis. The reduction of Eu3+ to Eu2+ in Sr9Mg1.5(PO4)7 lattice cannot be completed in a reducing atmosphere, but can be promoted through codoping with Ce3+ ions to a great extent, which finally increase the effective concentration of Eu2+ in the crystal lattice. The Eu3+–Eu2+ reduction mechanism is analyzed using a charge compensation model. This work not only achieves enhanced luminescence of the Sr9Mg1.5(PO4)7:Eu2+ phosphor by codoping with Ce3+ ions, but also provides new insights into the design of Ce3+/Eu2+ codoped luminescent materials.
关键词： optical materials,defects,doping,LED,europium
更新于2025-09-23 15:22:29
-
Growth Condition-Oriented Defect Engineering for Changes in Au–ZnO Contact Behavior from Schottky to Ohmic and Vice Versa
摘要： ZnO has the built-in characteristics of both ionic and covalent compound semiconductors, which makes the metal–ZnO carrier transport mechanism quite intricate. The growth mechanism-centric change in ZnO defect density and carrier concentration also makes the contact formation and behavior unpredictable. This study investigates the uncertainty in Au–ZnO contact behavior for application-oriented research and the development on ZnO nanostructures. Herein, we explain the phenomenon for how Au–ZnO contact could be rectifying or non-rectifying. Growth method-dependent defect engineering was exploited to explain the change in Schottky barrier heights at the Au–ZnO interface, and the change in device characteristics from Schottky to Ohmic and vice versa. The ZnO nanorods were fabricated via aqueous chemical growth (ACG) and microwave-assisted growth (MAG) methods. For further investigations, one ACG sample was doped with Ga, and another was subjected to oxygen plasma treatment (OPT). The ACG and Ga-doped ACG samples showed a quasi-Ohmic and Ohmic behavior, respectively, because of a high surface and subsurface level donor defect-centric Schottky barrier pinning at the Au–ZnO interface. However, the ACG-OPT and MAG samples showed a more pronounced Schottky contact because of the presence of low defect-centric carrier concentration via MAG, and the removal of the surface accumulation layer via the OPT process.
关键词： oxygen plasma treatment,nanorod,ZnO,crystal defects,microwave,metal-semiconductor contact
更新于2025-09-23 15:22:29
-
V-Defect and Dislocation Analysis in InGaN Multiple Quantum Wells on Patterned Sapphire Substrate
摘要： InGaN/GaN multiquantum well (MQW) structures have been grown on cone-shaped patterned sapphire substrates (CPSS) by metalorganic chemical vapor deposition (MOCVD). From the transmission electron microscopy (TEM) results, we found that most of the threading dislocations (TDs) in the trench region of the CPSS were bent by lateral growth mode. Also the staircase-like TDs were observed near the slant region of the cone pattern, they converged at the slope of the cone patterned region by staircase-upward propagation, which seems to effectively prevent TDs from vertical propagation in the trench region. The associated dislocation runs up into the overgrown GaN layer and MQW, and some (a+c) dislocations were shown to decompose inside the multi-quantum well, giving rise to a misfit segment in the c-plane and a V-shape defect. From cross-sectional TEM, we found that all V defects are not always connected with TDs at their bottom, some V defects are generated from the stacking mismatch boundaries induced by stacking faults which are formed within the MQW due to the strain relaxation.
关键词： V defects,Transmission electron microscopy (TEM),InGaN multi-quantum well (MQW),Threading dislocations (TDs)
更新于2025-09-23 15:22:29
-
Advanced Silicon Carbide Devices and Processing || Silicon Carbide for Novel Quantum Technology Devices
摘要： Silicon carbide (SiC) has recently been investigated as an alternative material to host deep optically active defects suitable for optical and spin quantum bits. This material presents a unique opportunity to realise more advanced quantum-based devices and sensors than currently possible. We will summarise key results revealing the role that defects have played in enabling optical and spin quantum measurements in this material such as single photon emission and optical spin control. The great advantage of SiC lies in its existing and well-developed device processing protocols and the possibilities to integrate these defects in a straightforward manner. There is particular current interest in nanomaterials and nanophotonics in SiC that could, once realised, introduce a new platform for quantum nanophotonics and in general for photonics. We will summarise SiC nanostructures exhibiting optical emission due to multiple polytypic bandgap engineering and deep defects. The combination of nanostructures and in-built paramagnetic defects in SiC could pave the way for future single-particle and single-defect quantum devices and related biomedical sensors with single-molecule sensitivity. We will review relevant classical devices in SiC (photonic crystal cavities, microdiscs) integrated with intrinsic defects. Finally, we will provide an outlook on future sensors that could arise from the integration of paramagnetic defects in SiC nanostructures and devices.
关键词： Optical-detected magnetic resonance,Single-photon sources,Silicon carbide deep defects,Paramagnetic properties
更新于2025-09-23 15:22:29
-
Effect of Defects on Spontaneous Polarization in Pure and Doped LiNbO3: First-Principles Calculations
摘要： Numerous studies have indicated that intrinsic defects in lithium niobate (LN) dominate its physical properties. In an Nb-rich environment, the structure that consists of a niobium anti-site with four lithium vacancies is considered the most stable structure. Based on the density functional theory (DFT), the specific configuration of the four lithium vacancies of LN were explored. The results indicated the most stable structure consisted of two lithium vacancies as the first neighbors and the other two as the second nearest neighbors of Nb anti-site in pure LN, and a similar stable structure was found in the doped LN. We found that the defects dipole moment has no direct contribution to the crystal polarization. Spontaneous polarization is more likely due to the lattice distortion of the crystal. This was verified in the defects structure of Mg2+, Sc3+, and Zr4+ doped LN. The conclusion provides a new understanding about the relationship between defect clusters and crystal polarization.
关键词： defects,lithium niobate,dipole moment,spontaneous polarization
更新于2025-09-23 15:22:29