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Real-time visualization of GaN/AlGaN high electron mobility transistor failure at off-state
摘要： Degradation and failure phenomena in high electron mobility transistors (HEMTs) are complex functions of electrical, thermal, and mechanical stresses as well as the quality of the device materials and their interfaces. Thus, it is difficult to predict or identify the dominant mechanism under various test protocols adopted in the literature. We propose that real-time visualization of the device microstructure can shift this paradigm. This is demonstrated by operating electron transparent AlGaN/GaN HEMTs inside a transmission electron microscope (TEM). Through the bright-field, diffraction, and energy dispersive spectroscopy techniques, we show that it is possible to characterize the lattice defects and diffusion of the various elements and thus monitor the micro-structural quality during the transistor failure. Off-state failure studies in the TEM clearly show the critical role of defects and interfaces that lead to punch-through mechanisms at the drain and even source sides. The 'seeing while measuring' approach presented in this study can be useful in pinpointing the dominant failure mechanisms and their fundamental origin.
关键词： GaN HEMTs,energy dispersive spectroscopy,lattice defects,transmission electron microscope,off-state failure,real-time visualization
更新于2025-09-23 15:21:01
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Nanoscale charge transport and local surface potential distribution to probe defect passivation in Ag doped Cu2ZnSnS4 absorbing layer
摘要： The performance of earth abundant Cu2ZnSnS4 (CZTS) material is limited by high deficit of open circuit voltage (VOC) which is mainly due to the easy formation of CuZn antisite defects. Suppression of CuZn defects is thus inevitably required for further developments in CZTS based solar cells. We studied systematic increase of Ag doping in CZTS thin film and investigated the nanoscale electrical properties using kelvin probe force microscopy (KPFM) and current sensing atomic force microscopy (CAFM) to probe CuZn defects. Crystallographic analysis indicated the successful partial substitution of Cu+ ions by large size Ag+ ions. The considerable decrease in grain boundary potential from 66.50 ± 5.44 mV to 13.50 ± 2.61 mV with Ag doping, suggesting the substantial decrease in CuZn defects. Consequently, CAFM measurement confirms the remarkable increment in minority carrier current with Ag doping and their local mobility in CZTS layer. Finally, the lower persistent photoconductivity (PPC) and fast decay response of photogenerated carriers for Ag doped CZTS photodetector further validate our results. This study provides a fresh approach of controlling deleterious CuZn defects in CZTS by tuning Ag content that may guide researchers to develop next generation high performance CZTS based solar cells.
关键词： nanoscale surface potential and current,CZTS solar cells,Ag doped CZTS,defects,photodetector
更新于2025-09-23 15:21:01
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Structured-illumination Makyoh-topography: optimum grid position and its constraints
摘要： Complementing conventional Makyoh topography with structured illumination using a sparse square grid, the large-scale surface shape can be calculated with a deflectometry approach, while the sample’s morphology can still be imaged. However, the grid’s image must be sharp not to mask the Makyoh image of the sample morphology. In this paper, the instrumental conditions for the grid sharpness are established. The two main types of Makyoh set-ups (lens and mirror based) are analysed. It is shown that the lens-based set-ups allow the position of the grid to be sharp on the Makyoh image. However, for mirror-based set-ups this is not possible because of geometrical instrumental constraints. The calculations are corroborated with experiments.
关键词： Makyoh topography,surface defects,structured illumination,deflectometry,geometrical optics,flatness testing
更新于2025-09-23 15:21:01
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Selective growth of monolayer semiconductors for diverse synaptic junctions
摘要： The information computation through synapse networks in the brain plays a vital role for cognitive behaviors such as image/video recognition, self-learning, and decision-making. Achieving proper synaptic networks by conventional semiconductor and memristive devices has encountered critical issues such as the spatial density requiring a number of transistors for one synapse, reliable filament formation in memristors, or emulating diverse excitatory and inhibitory synaptic plasticity with two-terminal device geometry. Here, we report selective growth of variously doped MoS2 with controllable conductance plasticity, which can be used for emulating diverse synaptic junctions. The conductance plasticity in the monolayer MoS2 was found to originate from resistive-heating near the junctions with electrodes in the two-terminal device geometry and the carrier-concentration-dependent metal-insulator transition in the MoS2 channel. A spatiotemporal synaptic summation is demonstrated where the firing of a proper postsynaptic membrane potential can be designed for cognitive processes. Compared with previously reported three terminal synaptic devices with atomically thin materials, our two-terminal devices with flexible synaptic strengths have advantages for integrating three-dimensional neuronal networks. This provides a new insight on two-dimensional materials as a promising arena for integrated synaptic functionalities in artificial neural networks.
关键词： chemical vapor deposition,metal-insulator transition,defects engineering,two dimensional materials,synaptic junction
更新于2025-09-23 15:21:01
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Induced Photonic Response of ZnO Nanorods Grown on Oxygen Plasma-Treated Seed Crystallites
摘要： We examined the influence of O2 plasma treatment for the ZnO seed layer (SL) crystallites on the material characteristics of ZnO nanorods (NRs) synthesized by the hydrothermal method. Diode photocurrent and photo-response transient characteristics of the p-Si/n-ZnO-NR heterojunction-based ultraviolet (UV) photodetectors were also examined according to the plasma treatment for the SLs. The superior optical properties of NRs were measured from the photoluminescence by exhibiting 4.6 times greater near-band edge emission when grown on the O2-plasma-treated SL. The degree of (002) orientation of the NR crystals was improved from 0.67 to 0.95, as revealed by X-ray diffraction analysis, and a higher NR surface density of ~80 rods/μm2 with a smaller mean diameter of 65 nm were also observed by the SL modification using plasma-treatment. It was shown by X-ray photo-electron spectroscopy that this improvement of NR crystalline quality was due to the recovery of stoichiometric oxygen with significant reduction of oxygenated impurities in the SL crystals and the subsequent low-energy growth mode for the NRs. UV PDs fabricated by the proposed SL plasma treatment technique showed significantly enhanced UV-to-dark current ratio from 2.0 to 83.7 at a forward bias of +5 V and faster photo-response characteristics showing the reduction in recovery time from 16 s to 9 s.
关键词： photoluminescence,surface defects,oxygen plasma,ZnO seed crystals,hydrothermal
更新于2025-09-23 15:21:01
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Mosaics of topological defects in micropatterned liquid crystal textures
摘要： Topological defects in the orientational order that appear in thin slabs of a nematic liquid crystal, as seen in the standard schlieren texture, behave as a random quasi–two-dimensional system with strong optical birefringence. We present an approach to creating and controlling the defects using air pillars, trapped by micropatterned holes in the silicon substrate. The defects are stabilized and positioned by the arrayed air pillars into regular two-dimensional lattices. We explore the effects of hole shape, lattice symmetry, and surface treatment on the resulting lattices of defects and explain their arrangements by application of topological rules. Last, we show the formation of detailed kaleidoscopic textures after the system is cooled down across the nematic–smectic A phase transition, frustrating the defects and surrounding structures with the equal-layer spacing condition of the smectic phase.
关键词： smectic A,nematic,birefringence,micropatterned,topological defects,liquid crystal
更新于2025-09-23 15:21:01
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Nano-size defect layers in arsenic-implanted and annealed HgCdTe epitaxial films studied with transmission electron microscopy
摘要： Optical reflectance and bright-field and high-resolution transmission electron microscopy studies of radiation damage induced by implantation of arsenic ions with 190 keV and 350 keV energy and 1014 cm–2 fluence in molecular-beam epitaxy-grown Hg0.7Cd0.3Te films were performed. A similarity in defect pattern formed by arsenic implantation in Hg1?xCdxTe with x ≈ 0.2 and x ≈ 0.3 straight after the implantation was observed with formation of three nano-size defect layers containing dislocation loops of vacancy- and interstitial-types, single dislocations and lattice deformations. After post-implantation arsenic activation annealing, most of these defects in our Hg0.7Cd0.3Te films, in contrast to Hg0.8Cd0.2Te films, disappeared. This effect is explained by the reduced influence of the electric field of the graded-gap surface layer on the diffusion of charged point defects under annealing.
关键词： HgCdTe,Transmission electron microscopy,Defects,Arsenic implantation
更新于2025-09-23 15:19:57
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Measurement of shallow defects using noncontact broadband leaky Lamb wave produced by pulsed laser with ultrasound microphone
摘要： In this study, we propose a convenient noncontact laser ultrasonic system to detect small cracks and estimate the wall-thinning defects of thin plates. The system uses an ultrasound microphone to detect the energy leaked from the broadband Lamb-wave propagation. The broadband characteristics of this wave, produced by a pulsed laser, are used to measure the wavenumber. The cumulative standing-wave energy (CSWE) method that uses a traveling wave is implemented to verify the feasibility of the ultrasound microphone. The excitation energy of the pulsed laser was insufficient compared with that of the continuous-wave contact actuator. Therefore, a modified local wavenumber estimation (LWE) method is proposed, which reconstructs several LWE images at various frequencies. These images are averaged to calculate thicknesses of the plate and defects, by using the wavenumber–thickness relationship. The method has an error of 2.84% and 7.7% for the thickness of the plate and defect area, respectively.
关键词： cumulative standing-wave energy (CSWE),ultrasound microphone,local wavenumber estimation (LWE),wall-thinning defects,noncontact laser ultrasonic system,broadband Lamb-wave propagation,small cracks
更新于2025-09-23 15:19:57
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Influence of defects on structural colours generated by laser-induced ripples
摘要： The colourisation of metallic surface which appears due to periodic surface patterns induced by ultrashort laser pulses is studied. Ripples due to the sub-micrometer size of their period act as a diffraction grating, generating structural colours. Carefully chosen strategy of the laser spot scanning allows us to mimic the nanostructures responsible for structural colours of some flowers on the metal substrate. We investigate the correlation between the colourising effects and the artificially-induced defects in the ripples structure and show that these defects can make the colours observable in a larger range of viewing angles. Further we address the influence of the processing parameters on the spectral profile of the reflected light.
关键词： structural colours,viewing angles,diffraction grating,defects,laser-induced ripples
更新于2025-09-23 15:19:57
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In-situ pulsed laser induced growth of CdS nanoparticles on ZnO nanorods surfaces
摘要： Herein we present a process for the in-situ growth of CdS nanoparticles using a pulsed laser irradiation. A Nd-YAG laser was applied to ZnO nanorods previously submerged in an aqueous precursor solution containing cadmium chloride and thiourea. For optimum values of the laser fluence, around 40 mJ/cm2 it was possible to fabricate a highly homogeneous film of CdS nanoparticles covering the ZnO nanorods surface. Cathodoluminescence measurements of the ZnO/CdS structure show the quenching of the ZnO yellow and green luminescence, indicating the ZnO surface defects passivation by CdS nanostructures. Although lasers have been already used for inducing growth in solution, this work presents new evidence of in-situ growth on the surface of nanostructured materials. The laser based technique presented is simple, easy to implement, scalable and it could be applied in the fabrication of nanostructured solar cells and other devices.
关键词： A. Inorganic compounds,D. Defects,A. Nanostructures,B. Chemical synthesis,C. Electron microscopy
更新于2025-09-23 15:19:57