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oe1(光电查) - 科学论文

2 条数据
?? 中文(中国)
  • 3-D empty substrate integrated waveguide phase shifter with equal length

    摘要: In this letter, a novel 3-D empty substrate integrated waveguide (ESIW) phase shifter with equal length has been proposed. The vertical transitions have been introduced into 3-D ESIW phase shifter in the propagation path. Based on it, the di?erent total lengths of phase shifters in the propagation path and the equal total lengths of phase shifters in the external structure are compatible. The phase shifter consists of multi-layer PCB: top layer, interlayer, middle layer, ESIW PCB, and bottom layer. The theory and design process of ESIW phase shifter have been explained and discussed in detail. To demonstrate its feasibility, the 3-D ESIW phase shifters with equal external length are designed, manufactured and measured. Final results show that the phase shifts of 45.2° 2 3.7° and 89.7° 2 4.7° can be achieved over the entire Ka-band. Besides, the return losses and the insertion losses are better than 12.5 dB, and 1.9 dB, respectively.

    关键词: phase shifter,3-D empty substrate integrated waveguide (ESIW),vertical transition

    更新于2025-09-16 10:30:52

  • Wideband Transition for Increased-Height Empty Substrate Integrated Waveguide

    摘要: Recently, Empty Substrate Integrated Waveguide (ESIW) technology was proposed for embedding empty waveguides into planar substrates in order to improve their performance. A low-loss and narrow-band transition from microstrip to an increased height ESIW with 4 layers was presented in a previous work, and used to implement a very high-quality factor bandpass filter at Q-band. With such a narrow-band transition, based on a quarter-wavelength transformer, a very narrow-band filter response with resonators having a quality factor of 1000 was achieved. In this paper, in order to overcome the narrow-band and the 4-layers output restrictions, and extend the practical use of such increased height ESIWs beyond narrow-band filters, we present a novel wideband transition from microstrip to an increased height ESIW with an arbitrary number of layers. A full suite of wideband transitions to increased height ESIWs, built with different number of substrate layers ranging from 3 to 8, has been designed in this work to operate at Ka-band, though they can be easily transferred to other bands if the dimensions of the transition are properly scaled. To illustrate this, the original Ka-band transitions have been mapped to Ku-band, with excellent results. In order to test the proposed design method, a prototype of a 4-layer structure has been fabricated at Ka-band, achieving a good performance in the whole useful bandwidth of the ESIW.

    关键词: Empty substrate integrated waveguide,multilayer,SIW,substrate integrated waveguide,substrate integrated circuit,microstrip transition,high quality factor,SIC,ESIW

    更新于2025-09-11 14:15:04