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Effect of rare earth Pr doping on core characteristics of electrodeposited nanocrystalline Cu2O films: a film for optoelectronic technology
摘要： Undoped and Pr doped Cu2O nanocrystalline ?lms were fabricated by the electrodeposition method. These ?lms were studied to investigate the formation, morphology, optical, and photoresponse properties on Pr doping concentrations (i.e., 0, 1, 3, and 5 wt%). Structural studies of the deposited Cu2O:Pr ?lms exposed the cubic crystal structure with polycrystalline nature. The crystallite size is decreased from 54 to 29 nm by increasing the Pr doping concentrations. The Raman peaks at 110, 147, 215, 413, and 633 con?rm the Cu2O phase and well matched with the XRD results. The morphological study shows that the pyramid-shaped particles are homogeneously arranged on the ?lm surfaces. The absorption is high for the ?lm deposited with the 5% Pr doping is due to the maximum thickness than the other ?lms. The calculated band gap values of Cu2O:Pr ?lms were reduced from 2.06 to 1.90 eV with raising the Pr doping level. PL spectra showed high intense emission peak at 617 nm which con?rms the NBE emission of Cu2O lattice. Index of refraction (n) and coef?cient of extinction (k) values were increased on increasing the doping concentration from 0 to 5%. From photosensitivity analysis, there is an increase of photoresponse behavior with respect to illuminated current.
关键词： Electrodeposition,Structural,Optical and electrical properties,Morphological
更新于2025-11-21 11:18:25
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Effect of Deposition Potential on Synthesis, Structural, Morphological and Photoconductivity Response of Cu2O Thin Films by Electrodeposition Technique
摘要： The present work describes the effect of deposition potentials on structural, morphological, optical, electrical and photoconductivity responses of cuprous oxide (Cu2O) thin films deposited on fluorine-doped tin oxide glass substrate by employing electrodeposition technique. X-ray diffraction patterns reveal that the deposited films have a cubic structure grown along the preferential (111) growth orientation and crystallinity of the film deposited at ? 0.4 V is improved compared to the films deposited at ? 0.2, ? 0.3 and ? 0.5 V. Scanning electron microscopy displays that surface morphology of Cu2O film has a well-defined three-sided pyramid-shaped grains which are uniformly distributed over the surface of the substrates and are significantly changed as a function of deposition potential. Raman and photoluminescence spectra manifest that the film deposited at ? 0.4 V has a good crystal quality with higher acceptor concentration compared to other films. UV–visible analysis illustrates that the absorption of Cu2O thin film deposited at ? 0.4 V is notably higher compared to other films and the band gap of Cu2O thin films decreases from 2.1 to 2.04 eV with an increase in deposition potential from ? 0.2 to ? 0.5 V. The frequency–temperature dependence of impedance analysis shows that the film deposited at ? 0.4 V has a high conductivity. I–V measurements elucidate that the film deposited at ? 0.4 V exhibits a good photoconductivity response compared to films deposited in other deposition potentials.
关键词： Cu2O thin films,Electrodeposition,I–V measurement,Photoconductivity response
更新于2025-11-19 16:46:39
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Influence of pulse frequency on physicochemical properties of InSb films obtained via electrodeposition
摘要： Presented work focuses on the tremendous and often skipped role of pulse frequency on the structural, optical and electrical properties of electrodeposited InSb films. Tailoring the pulse frequency during electrodeposition allows to obtain stoichiometric, nanocrystalline, smooth films with relatively high electrical conductivity or Sb-rich, almost insulating, ultra smooth ones. It was observed that a double coherent domain size reduction (via decrease of pulse frequency) leads to a six fold increase in resistivity of the film. Further increasing pulse on time results in increasing resistivity of the material up to ca. 540 U cm. Based on the FTIR and SPV measurements it was confirmed that obtained materials are characterized by small band gap and p-type conductivity. Moreover, stoichiometric, ultra smooth InSb films obtained with 10 ms pulse on time have high photovoltage amplitude and charging time constant with relatively high conductivity, which makes them a good, low-cost candidate for optoelectronic devices.
关键词： Pulse frequency,Electrodeposition,InSb,p-type semiconductor
更新于2025-11-14 15:19:41
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Electrochemical and surface deformation studies on electrodeposited nanostructured Bi2Te3 thin films
摘要： In this article, we have used double exposure digital holographic interferometry (DEDHI) technique for surface deformation study and hologram recording during synthesis of the Bi2Te3 thin films by electrodeposition method. The synthesized Bi2Te3 thin films were characterized structural, morphological, electrochemical, wettability and surface deformation study. Further the holograms are recorded during the electrodeposition process by varying the concentration of electrolyte. From the recorded fringes the stress, deposited mass and thickness have been calculated. It is observed that the fringe width, mass of deposited thin films, and stress to substrate changes with the concentration of electrolyte. The DEDHI technique is found more reliable for thickness measurement in electrodeposition process. The EIS study confirms that the deposited material is highly conducting.
关键词： Bi2Te3,EIS,Holography,DEDHI,Electrochemical properties,Electrodeposition
更新于2025-11-14 15:16:37
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Reactive Mechanism of Cu2ZnSnSe4 Thin Films Prepared by Reactive Annealing of the Cu/Zn Metal Layer in a SnSex + Se Atmosphere
摘要： Cu2ZnSnSe4 (CZTSe) thin films were prepared by a two-step process with the electrodeposition of a Cu/Zn metallic stack precursor followed by a reactive anneal under a Se + Sn containing atmosphere. We investigate the effect of the Sex and SnSex (x = 1,2) partial pressures and annealing temperature on the morphological, structural, and elemental distribution of the CZTSe thin films. Line scanning energy dispersive spectroscopy (EDS) measurements show the presence of a Zn-rich secondary phase at the back-absorber region of the CZTSe thin films processed with higher SnSex partial pressure and lower annealing temperatures. The Zn-rich phase can be reduced by lowering the SnSex partial pressure and by increasing the annealing temperature. A very thin MoSe2 film between the CZTSe and Mo interface is confirmed by X-ray diffraction (XRD) and grazing incidence X-ray diffraction (GIXRD) measurements. These measurements indicate a strong dependence of these process variations in secondary phase formation and accumulation. A possible reaction mechanism of CZTSe thin films was presented. In a preliminary optimization of both the SnSex partial pressure and the reactive annealing process, a solar cell with 7.26% efficiency has been fabricated.
关键词： Sex and SnSex (x = 1,2) partial pressures,annealing temperature,metallic stack precursor,Cu2ZnSnSe4 (CZTSe),electrodeposition
更新于2025-11-14 15:15:56
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High Breakdown Strength Schottky Diodes Made from Electrodeposited ZnO for Power Electronics Applications
摘要： The synthesis of ZnO films by optimized electrodeposition led to the achievement of a critical electric field of 800 kV/cm. This value, which is 2 to 3 times higher than in monocrystalline silicon, was derived from a vertical Schottky diode application of columnar-structured ZnO films electrodeposited on platinum. The device exhibited a free carrier concentration of 2.5 × 10^15 cm^-3, a rectification ratio of 3 × 10^8 and an ideality factor of 1.10, a value uncommonly obtained in solution-processed ZnO. High breakdown strength and high thickness capability make this environment-friendly process a serious option for power electronics and energy-harvesting.
关键词： breakdown voltage,electrodeposition,zinc oxide,critical electric field,solution-processed,Schottky diode,power diode,ideality factor
更新于2025-09-23 15:23:52
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One-Step Electrodeposition of CuZnSn Metal Alloy Precursor Film Followed by the Synthesis of Cu2ZnSnS4 and Cu2ZnSnSe4 Light Absorber Films and Heterojunction Devices
摘要： CuZnSn metallic alloy precursor films were electrodeposited on Mo substrate from a Zn-rich bath solution yielding low deposition rates. The precursor films were converted to photovoltaic absorber films of Cu2ZnSnS4 and Cu2ZnSnSe4 by sulfurization and selenization processes. X-ray diffraction, Raman spectroscopy and photocurrent spectroscopy techniques were utilized for the identification of films. The surface morphology, uniformity and compactness of the films were examined by scanning electron microscopy. The precursor and absorber films had a uniform and compact structure. The precursor films were composed from the Cu3Sn, Cu6Sn5 and Cu5Zn8 phases and their grain size varied tightly with the cathode potential. The conversion of precursor films to Cu2ZnSnS4 and Cu2ZnSnSe4 were verified from the results of their X-ray diffraction, Raman shifts, and optical transition energies. To assess the device quality of the absorber films, CdS/Cu2ZnSnS4 and CdS/Cu2ZnSnSe4 heterojunction diodes were fabricated and their device parameters were determined. The diodes showed relatively good ideality factor of 1.3-1.9, current rectification factor of ~120, and reverse biased saturation current of ~30-60 μA/cm2. Photocurrent spectroscopy was utilized to evaluate the band gap energy and other optical transition energies of the absorber films from the short-circuit photocurrent of the diodes.
关键词： electrodeposition,CZTS,CZTSe,photocurrent,Raman
更新于2025-09-23 15:23:52
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Electrodeposition of lead selenide films from ionic liquids based on choline chloride
摘要： The paper presents some experimental results regarding the electrodeposition of PbSe thin films at 70 oC from two choline chloride (ChCl) based ionic liquids containing PbCl2 and SeO2 as precursors in choline chloride-ethylene glycol (ILEG) and choline chloride-urea (IL) eutectic mixtures. In this article we will detail our investigation of cathodic processes involved during the electrodeposition of binary semiconductor compound, PbSe as well as of singular Pb and Se elements. The cathodic branches of the recorded cyclic voltammograms in the cases of ionic liquids containing both Pb2+ + Se4+ show successively the Se underpotential deposition, Se bulk deposition and Pb deposition followed by a formation of PbSe semiconductor compound. However, at the most negative potentials the Se content of final layers decreases by a partial electrochemical dissolution of Se which reduces to Se2- soluble species. PbSe thin films have been electrodeposited on copper or nickel substrates under potentiostatic control at 70 oC for 0.5-4 h. The adherent and uniform deposits were characterized by SEM-EDX and XRD techniques. SEM images have shown adherent and grey deposits with uniform morphology and cubic PbSe crystals. A stoichiometry of around Pb1.1Se was indicated by EDX elemental analysis. XRD confirmed the formation of PbSe compound, showing a nanocrystalline structure, with crystallites average sizes in the range of 10-35 nm.
关键词： DES ionic liquids,electrodeposition,selenide semiconductors,Lead selenide,cyclic voltammetry
更新于2025-09-23 15:23:52
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Growth, morphology and crystal structure of electrodeposited Bi2Se3 films: Influence of the substrate
摘要： In this study, we investigated the growth, morphology and crystal structure of electrodeposited Bi2Se3 films on n-Si, Au and Ru substrates. The range of potentials at which films with good quality and stoichiometry can be grown have been identified. Scanning electron micrographs of the early stages of nucleation and growth suggests the film formation on all three substrates follow the Volmer-Weber growth mode. In the case of Si substrate, a pure orthorhombic phase of Bi2Se3 could be grown which is influenced by the epitaxy of the Si substrate. The Faradaic efficiency of film growth on Si substrate was found to be around 90%. However, on Au and Ru substrates, growth of mainly the rhombohedral phase could be achieved having relatively lower Faradaic efficiencies of 68% and 78%, respectively. The Bi2Se3 films grown on Au at more negative potentials were found to exhibit improvements in the rhombohedral crystal phase. Low temperature annealing was found to transform the orthorhombic or mixed phase crystal structure to that of pure rhombohedral. The onset of phase transformation in the mixed phase Bi2Se3 films (on Au) was found to be around 125°C, determined using in-situ Raman spectroscopy. Aside from the temperature, the duration of heat treatment is identified to play a crucial role in this phase transformation. Based on our findings on room temperature deposition, we conclude that the growth of pure orthorhombic phase is favored on Si, while on Au and Ru, growth of the rhombohedral or mixed phase of Bi2Se3 could be achieved.
关键词： Raman,Annealing,Electrodeposition,Crystal structure,Substrate epitaxy,Bi2Se3,Growth
更新于2025-09-23 15:23:52
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Influence of the supramolecular arrangement of iron phthalocyanine thin films on catecholamine oxidation
摘要： The versatility of iron phthalocyanine (FePc) to form distinct supramolecular arrangements in thin films, characterized by their thickness, molecular organization, morphology, and crystallinity, can be used to tune the electrochemical oxidation of catecholamines, becoming a promising material for sensing applications. Here, Langmuir-Schaefer (LS) and electrodeposition (ED) techniques have been used to produce thin films of FePc with different supramolecular arrangements on ITO electrodes. Both types of modified electrode were evaluated for the electrochemical oxidation of L-Dopa, dopamine (DA), norepinephrine (NEp), and epinephrine (Ep) in aqueous solution. The effect of scan rate, potential range, presence of oxygen, and pH were also evaluated, having an influence on the electrochemical oxidation of catecholamines. The FePc/ED modified electrodes showed two distinct peaks in the presence of mixtures of DA/L-Dopa and DA/Ep, while for FePc/LS modified electrodes an overlap of the oxidation waves was observed. This behaviour reveals the influence of the supramolecular arrangement of FePc on catecholamine oxidation. The FePc/LS modified electrodes showed a limit of detection of 0.024 μmol L-1 for DA and 0.168 μmol L-1 for L-Dopa, while FePc/ED showed limits of detection of 0.288 μmol L-1 and 0.564 μmol L-1, respectively. The FePc films showed suitable properties for future application as catecholamine sensors.
关键词： electrodeposition,Langmuir-Schaefer,iron phthalocyanine,catecholamines
更新于2025-09-23 15:23:52