1：Experimental Design and Method Selection:

The study involved electrodeposition of CuZnSn alloy films from a Zn-rich bath solution on Mo substrates, followed by sulfurization and selenization to form Cu2ZnSnS4 and Cu2ZnSnSe4 absorber films. Techniques such as X-ray diffraction, Raman spectroscopy, photocurrent spectroscopy, and scanning electron microscopy were used for characterization. Heterojunction diodes (CdS/Cu2ZnSnS4 and CdS/Cu2ZnSnSe4) were fabricated to assess device quality.

2：Sample Selection and Data Sources:

Samples were electrodeposited films on Mo substrates. Data were obtained from experimental measurements using the specified techniques.

3：List of Experimental Equipment and Materials:

Mo substrates, electrodeposition bath solution (Zn-rich), sulfurization and selenization equipment, X-ray diffractometer, Raman spectrometer, photocurrent spectroscopy setup, scanning electron microscope, materials for diode fabrication (e.g., CdS).

4：Experimental Procedures and Operational Workflow:

Electrodeposition was performed with controlled cathode potential to deposit precursor films. These films were then subjected to sulfurization or selenization processes. Characterization involved X-ray diffraction for phase identification, Raman spectroscopy for compound verification, scanning electron microscopy for morphology analysis, and photocurrent spectroscopy for optical properties. Diodes were fabricated, and their electrical parameters were measured.

5：Data Analysis Methods:

Data from X-ray diffraction and Raman spectroscopy were analyzed to identify phases and confirm film conversion. Photocurrent data were used to determine band gap energies and other optical transitions. Electrical parameters of diodes (ideality factor, rectification factor, saturation current) were calculated from current-voltage measurements.