研究目的

Investigating the production and photovoltaic characterisation of n-Si/p-CZTS heterojunction solar cells based on CZTS ultrathin active layers.

研究成果

The study concluded that Au/n-Si/p-CZTS/Ag solar cells produced with ultrathin CZTS films exhibit photovoltaic properties, with the highest efficiency achieved by the cell with a 210 nm thick CZTS film. The efficiency was found to be influenced by the thickness and annealing temperature of the CZTS films. The research highlights the potential of ultrathin CZTS films in solar cell applications but also points out the need for further optimization of contact materials and film stoichiometry to improve performance.

研究不足

The study acknowledges limitations such as the potential formation of an oxide layer on Si wafers leading to interfacial states, defects, and traps between Si and CZTS layers, which can affect charge transmission and result in low Voc values. Additionally, the use of Ag and Au contacts with work functions not ideally matched to CZTS and Si, respectively, leads to high contact resistance and series resistance, impacting the solar cells' performance.