- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Electron Transport with Mobility, μ > 86 cm2/Vs, in a 74 nm Long Polyfluorene
摘要： The mobility of charges on conjugated polymers is a fundamentally important feature of these materials, but most fall far short of transport that might lead one to call them “molecular wires”. A commonly identified bottleneck is flexible dihedral angles between repeat units. Here we find a very high mobility, μ > 86 cm2/Vs, for electrons attached to polyfluorene polymers in isooctane, despite the presence of varied dihedral angles. The present data suggests that interactions with the surrounding medium may be a principal determinant of charge mobility.
关键词： mobility,molecular wires,conjugated polymers,polyfluorene,electron transport
更新于2025-09-04 15:30:14
-
[IEEE 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Austin, TX, USA (2018.9.24-2018.9.26)] 2018 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) - Simulation of Quantum Current in Double Gate MOSFETs: Vortices in Electron Transport
摘要： Quantum simulation of electronic transport in double gate (DG) field-effect transistors (FETs) and FinFETs is usually deemed to be required as the devices are scaled to the nanometer length-scale. Here, we present results obtained using a simulation program to model ballistic quantum transport in these devices. Our quantum simulations show the presence of quasi bound electronic states in the channel and Fano-interference phenomenon in the transport behavior of ultra-thin body (UTB) Si DG MOSFETs. Vortices in electron wavefunctions are also reported at energies at which transmission zeros (antiresonance) occur.
关键词： Fano antiresonance,Schr¨odinger,QTBM,DG MOSFET,quantum interference,electron transport
更新于2025-09-04 15:30:14
-
Electron Transport in Nanoporous Graphene: Probing the Talbot Effect
摘要： Electrons in graphene can show diffraction and interference phenomena fully analogous to light thanks to their Dirac-like energy dispersion. However, it is not clear how this optical analogy persists in nanostructured graphene, for example, with pores. Nanoporous graphene (NPG) consisting of linked graphene nanoribbons has recently been fabricated using molecular precursors and bottom-up assembly (Moreno et al. Science 2018, 360, 199). We predict that electrons propagating in NPG exhibit the interference Talbot effect, analogous to photons in coupled waveguides. Our results are obtained by parameter-free atomistic calculations of real-sized NPG samples based on seamlessly integrated density functional theory and tight-binding regions. We link the origins of this interference phenomenon to the band structure of the NPG. Most importantly, we demonstrate how the Talbot effect may be detected experimentally using dual-probe scanning tunneling microscopy. Talbot interference of electron waves in NPG or other related materials may open up new opportunities for future quantum electronics, computing, or sensing.
关键词： multiscale modeling,electron transport,Nanoporous graphene,scanning probe microscopy,Talbot interference
更新于2025-09-04 15:30:14