Study on 4H-SiC GGNMOS based ESD Protection Circuit with Low Trigger Voltage Using Gate-Body Floating Technique for 70 V Applications

摘要： In this letter, we propose a 4H-SiC based electrostatic discharge (ESD) protection circuit with a new structure that has low on-resistance and good high-temperature characteristics while improving the high triggering voltage by applying an improved floating technology to the 4H-SiC grounded-gate n-type metal–oxide–semiconductor (GGNMOS) for 70V applications. Electrical characteristics of the 4H-SiC-based conventional GGNMOS, floating-body NMOS (FBNMOS), and the proposed ESD protection circuit were compared and analyzed using the transmission-line pulse test. To verify the high-temperature characteristics of the proposed 4H-SiC-based ESD protection circuit, its thermal reliability was measured at high temperatures (300–500 K).