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Superdomain structure and high conductivity at the vertices in the (111)-oriented epitaxial tetragonal Pb(Zr,Ti)O3 thin film
摘要： Recently, in ferroelectric materials, there have been many experimental efforts to find out more intriguing topological objects and their functionalities, such as conduction property. Here we investigated ferroelectric domain structures and related topological defects in the (111)-oriented epitaxial tetragonal PbZr0.35Ti0.65O3 thin film. Systematic piezoresponse force microscopy measurements revealed that the field-induced polarization switching can form thermodynamically stable superdomain structures composed of nano-sized stripe sub-domains. Within such superdomain structures, we observed the exotic equilateral triangular in-plane flux-closure domains composed of three stripe domain bundles with 120/120/120 degrees of separation. The conductive-atomic force microscopy measurements under vacuum showed that some vertices have significantly higher conductivity compared to other surrounding regions. This work highlights electric field-driven polarization switching and unique crystallographic symmetry (here, three-fold rotational symmetry) can generate exotic ferroelectric domain structures and functional topological defects, such as conductive vertices.
关键词： Vertex,Ferroelectric,Superdomain,Flux-closure domain,Piezoresponse force microscopy,Conductive-atomic force microscopy
更新于2025-09-23 15:23:52
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Modified dielectric and ferroelectric properties in the composite of ferrimagnetic Co1.75Fe1.25O4 ferrite and ferroelectric BaTiO3 perovskite in comparison to Co1.75Fe1.25O4 ferrite
摘要： The ferrimagnetic Co1.75Fe1.25O4 ferrite with cubic spinel structure (space group Fd3m) was made into composite by mixing with ferroelectric BaTiO3 perovskite with tetragonal structure (space group P4mm) at the mass ratio 50:50. Disc shaped composite powder was finally heated at 1000 °C to study the structure, dielectric and ferroelectric properties. The electrical conductivity, dielectric response and ferroelectric properties of the composite samples are remarkably modified in comparison to their ferrite counterparts before making the composite. The composite system has shown improvement of dielectric constant with reduced dielectric loss factor and electrical conductivity in comparison to the ferrite samples. The mechanism of modified dielectric properties was understood by analyzing ac conductivity data using Jonscher's power law, complex impedance spectra in Cole-Cole plots using equivalent circuit model, and complex electrical modulus spectra using Kohlrausch, Williams and Watts (KWW) proposed model. Electrical conductivity in the composite material was determined by small polaron hoping (SPH) up to measurement temperature 400 K (close to ferroelectric transition of BaTiO3) and overlapping large polaron hopping conductivity at higher temperatures. In contrast, SPH dominates throughout the measurement temperature range for ferrite samples. The space charge polarization, which was largely effective at low frequencies and high measurement temperatures, is significantly reduced in composite samples. High capacitive response in composite samples and its extension up to high measurement temperature is confirmed from the temperature dependence of phase shift and well defined ferroelectric polarization loop and associated electrical parameters.
关键词： Composite dielectric,Polaron hopping,Ferroelectric polarization,Co rich spinel oxide
更新于2025-09-23 15:23:52
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Dielectric and Transport Properties of Strontium Modified Calcium Copper Titanate
摘要： The present article provides the detailed study of the effect of strontium on the structural, microstructural, dielectric and electrical characteristics of strontium modified calcium copper titanate (i.e. Ca0.95Sr0.05Cu3Ti4O12, referred as CSCTO further) synthesized by a cost-effective ceramic processing technology. The structural analysis carried out suggests a cubic symmetry in the prepared sample. The dielectric relaxation and electrical conduction mechanism of CSCTO were studied using various powerful spectroscopic tools (i.e dielectric and impedance). Study of temperature dependence of dielectric permittivity exhibits very high (giant) dielectric permittivity (5 (cid:1) 103) and low loss factor at low frequency (1 kHz) at an intermediate temperature (315 (cid:3)C). Structure–properties relationship and conduction mechanism have been studied in a wide frequency (103–106 Hz) and temperature (25–315 (cid:3)C) range. At region of low frequency and high temperatures, there is a dominant role of the interface and Maxwell–Wagner dielectric relaxation mechanism in CSCTO bulk ceramic. The grain, grain boundary and electrode contributes towards the capacitive and resistive property of the sample are discerned from Nyquist plot. The ferroelectric (P–E) loop of the sintered CSCTO bulk sample at room temperature showed a lossy hysteresis loop. These findings further promote the capabilities of CSCTO as a base for supercapacitor.
关键词： X-Ray diffraction,supercapacitor,ferroelectric phase,microstructure,dielectric properties
更新于2025-09-23 15:23:52
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Combined experimental and theoretical investigation on modulation of multiferroic properties in BiFeO3 ceramics induced by Dy and transition metals co-doping
摘要： Multiferroic Dy and transition metals (Cr, Mn, Ni) co-doped BiFeO3 ceramics were successfully synthesized by a solid-state method, and the influence on the magnetic and ferroelectric properties were investigated. Compared with Bi0.95Dy0.05Fe0.95Mn0.05O3, Bi0.95Dy0.05Fe0.95Cr0.05O3 and Bi0.95Dy0.05Fe0.95Ni0.05O3 ceramics can significantly improve the magnetic properties. The significant enhancement of magnetic properties should be related to the local ferromagnetic coupling from Cr ions (Ni ions) and Fe ions, which have already been proved by first-principles calculations. Meanwhile, both experimental and theoretical studies reveal the Dy substitution can effectively enhance the ferroelectric properties of BiFeO3. Leakage current and conduction mechanism analyses reveal that the improved ferroelectric properties are mainly attributed to the reduced oxygen vacancies.
关键词： Magnetic property,Ferroelectric property,BiFeO3,Substitution
更新于2025-09-23 15:23:52
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Doping induced dielectric anomaly below the Curie temperature in molecular ferroelectric diisopropylammonium bromide
摘要： A dielectric anomaly induced by doping has been observed at about 340 K in chlorine-doped diisopropylammonium bromide. The dielectric anomaly has a switchable behaviour, which indicates potential applications on switches and sensors. Temperature-dependent Raman spectrum, X-ray diffraction and differential scanning calorimetry do not show any anomaly around the dielectric anomaly temperature, which prove that the dielectric anomaly does not come from structure phase transition and has no specific heat variety. It is assumed that this dielectric anomaly can be attributed to the freezing of ferroelectric domain walls induced by the pinning of point defects.
关键词： diisopropylammonium bromide,molecular ferroelectric,doping,dielectric anomaly
更新于2025-09-23 15:23:52
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by isovalent doping at the fluorite sublattice
摘要： Bismuth titanate, Bi4Ti3O12 (BiT), is a complex layered ferroelectric material that is composed of three perovskite-like units and one fluorite-like unit stacked alternatively along the transverse direction. The ground-state crystal structure is monoclinic with the spontaneous polarization (～50 μC/cm2) along the plane. BiT typically grows along the c direction in thin-film form, and having the polarization vector aligned with the growth orientation can be beneficial for several potential device applications. It is well known that judicious doping of ferroelectrics is an effective method in adjusting the magnitude and the orientation of the spontaneous polarization. Here, we show using first-principles density-functional theory and a detailed phonon analysis that Bi atoms in the fluorite-like layers have significantly more impact on the magnitude and orientation of the spontaneous polarization vector as compared to the perovskite-like layer. The low-energy hard-phonon modes are characterized by fluorite-like layers experiencing transverse displacements and large changes in Born effective charges on Bi atoms. Thus, the breaking of symmetry caused by doping of Bi sites within the fluorite-like layer leads to the formation of uncancelled permanent dipole moments along the transverse direction. This provides an opportunity for doping the Bi site in the fluorite-like layer. Isovalent dopants P, As, and Sb were studied. P is found to be most effective in the reorientation of the spontaneous polarization. It leads to a threefold enhancement of the out-of-plane component of polarization and to a commensurate rotation of the spontaneous polarization vector by 36.2° towards the transverse direction.
关键词： phonon analysis,doping,ferroelectric,Bi4Ti3O12,first-principles,polarization
更新于2025-09-23 15:23:52
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Inverse size-dependence of piezoelectricity in single BaTiO3 nanoparticles
摘要： The piezoelectric charge coefficients d33 of single BaTiO3 (BT) nanoparticles (NPs) were characterized using a transmission electron microscope (TEM) that is equipped with a precise charge meter and an in-situ TEM indentation holder that enables controlled compression experiments. An exceptionally high d33 of 1775 pC/N was obtained in NPs that are smaller than the critical diameter (D; typically known as < 100 nm) that has been regarded as the lower limit to permit for ferroelectricity in BT. The mechanical conversion efficiency of piezoelectric BT nanogenerators enhanced as D of BT NPs was decreased; this result corresponds with the single-NP compression measurements of d33. This quantification of the effect of D in ferroelectric materials may guide development of efficient and high-powered nanostructured piezoelectric energy devices such as piezoelectric nanogenerators.
关键词： in-situ TEM,size effect,STEM,Ferroelectric,piezoelectric,nanogenerator
更新于2025-09-23 15:23:52
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[IEEE 2018 IEEE International Reliability Physics Symposium (IRPS) - Burlingame, CA (2018.3.11-2018.3.15)] 2018 IEEE International Reliability Physics Symposium (IRPS) - High-temperature and high-field cycling reliability of PZT films embedded within 130 nm CMOS
摘要： We present a systematic reliability study of PZT polarization retention after exposure to high temperatures and high-field cycling. After a 260 °C Pb-free solder assembly reflow-like exposure, a signal margin of >10 μC/cm2 is achieved at a read voltage of 1 V. Extraction of the Preisach distribution after thermal depolarization and restore exhibits an increase in the positive coercive voltage by 45 % while the negative coercive voltage shows minimal deviation (<7 %). Under accelerated aging via high electric fields (2.4 V), maximum wake-up at 106 cycles followed by fatigue >108 cycles is observed. Asymmetry in coercive voltage is minimized after wakeup and remanent polarization maximized. After fatigue, a signal margin >10 μC/cm2 is maintained for read voltages >0.8 V.
关键词： high-temperature bake,Ferroelectric capacitor,thermal depolarization,cycling,data retention,imprint
更新于2025-09-23 15:23:52
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Enhanced Photocatalytic Activity by the Combined Influence of Ferroelectric Domain and Au Nanoparticles for BaTiO <sub/>3</sub> Fibers
摘要： Ferroelectric particles have been applied in the photocatalytic field because the spontaneous polarization results in the internal electric field, which can accelerate the separation and migration of photogenerated carriers. In this study, the BaTiO3 (BT) fibers are synthesized by electrospinning. The BT fibers calcined above 800 °C exhibit a strong ferroelectric property, which is verified by a typical butterfly-shaped displacement-voltage loop. It is found that the BT fibers with the single-domain structure exhibit better photocatalytic performance than that with the multi-domain configuration. When the single-domain transforms into multi-domain, the integrated internal electric field correspondingly breaks up, inducing that the internal electric field might cancel each other out and diminish the separation of photogenerated carriers. Also, the Au nanoparticles can improve the photocatalytic activity further on account of the surface plasmon resonance. Therefore, it is suggested that Au nanoparticles decorated on ferroelectric BT nanomaterials are promising photocatalysts.
关键词： photocatalytic performance,Ferroelectric property,domain configuration,internal electric field
更新于2025-09-23 15:23:52
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Structural and electrical properties of ferroelectric BiFeO <sub/>3</sub> /HfO <sub/>2</sub> gate stack for nonvolatile memory applications
摘要： Difficulties in the fabrication of direct interface of ferroelectric BiFeO3 on the gate of ferroelectric field effect transistor (FeFET) is well known. This paper reports the optimization and fabrication of ferroelectric/dielectric (BiFeO3/HfO2) gate stack for the FeFET applications. RF magnetron sputtering has been used for the deposition of BiFeO3, HfO2 films and their stack. X-Ray diffraction (XRD) analysis of BiFeO3 shows the dominant perovskite phase of (104), (110) orientation at 2θ = 32° at the annealing temperature of 500 °C. XRD analysis also confirms the amorphous nature of the HfO2 film at annealing temperature of 400°C, 500 °C and 600 °C. Multiple angle analysis shows the variation in the refractive index between 2.98–3.0214 for BiFeO3 and 2.74–2.9 for the HfO2 film with the annealing temperature. Metal/Ferroelectric/Silicon (MFS), Metal/Ferroelectric/Metal (MFM), Metal/Insulator/Silicon (MIS), and Metal/Ferroelectric/Insulator/Silicon (MFIS) structures have been fabricated to obtain the electric characteristic of the ferroelectric, dielectric and their stacks. Electrical characteristics of the MFIS structure show the memory improvement from 2.7 V for MFS structure to 4.65 V for MFIS structure with 8 nm of buffer dielectric layer. This structure also shows the breakdown voltage of 40 V with data retention capacity greater than 9 × 10^9 iteration cycles.
关键词： ferroelectric,high-k dielectric,Endurance,MFIS.,memory window
更新于2025-09-23 15:23:52