1：Experimental Design and Method Selection:

The study utilized piezoresponse force microscopy (PFM) and conductive-atomic force microscopy (c-AFM) to investigate ferroelectric domain structures and conduction properties. PFM was used for domain imaging, and c-AFM for conductivity measurements under high vacuum.

2：Sample Selection and Data Sources:

A high-quality PbZr

3：35Ti65O3 (PZT) thin film (~160 nm thickness) was fabricated on a (111) SrTiO3 substrate with an epitaxial SrRuO3 bottom electrode using metalorganic chemical vapor deposition and radio frequency magnetron sputtering. List of Experimental Equipment and Materials:

Equipment includes PFM systems (XE-100 from Park Systems and JSPM-5410 from Jeol), c-AFM system (JSPM-5410 from Jeol), conductive Pt/Ir-coated tips (PPP-EFM from Nanosensors), arbitrary waveform generator (FG300 from Yokogawa), lock-in amplifiers (SR830 from Stanford Research Systems and Model 7265 from Signal Recovery), and data analysis software (XEI from Park Systems and Winspm II from Jeol). Materials include PZT thin film, SrTiO3 substrate, and SrRuO3 electrode.

4：Experimental Procedures and Operational Workflow:

The film was poled using DC sample bias to induce polarization switching. PFM measurements were performed with AC voltage applied through the bottom electrode. c-AFM measurements were conducted under high vacuum with sample bias to measure current. I-V curves were measured at specific points.

5：Data Analysis Methods:

Data were analyzed using XEI and Winspm II software. Conduction mechanisms were evaluated using models such as Simmons-Schottky emission, Fowler-Nordheim tunneling, space charge limited conduction, and Poole-Frenkel hopping.