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[Lecture Notes in Mechanical Engineering] Advances in Thin Films, Nanostructured Materials, and Coatings (Selected Papers from the 2018 International Conference on “Nanomaterials: Applications & Properties”) || Stain Effect on the Properties of Polar Dielectric Thin Films
摘要: Low cost scalable processing and substrates are critical for optimized polar dielectric performance of functional oxide thin ?lms if they are to achieve commercialization. Here, we present a comprehensive investigation of the role low-cost MgO, Al2O3, SrTiO3 and Si substrates on the structural and electrical properties of sol-gel derived SrTiO3 (ST) and K0.5Na0.5NbO3 (KNN) thin ?lms. The substrate is found to have a strong effect on the stress/stain state and, consequently, on the dielectric and ferroelectric response of the ?lms. A tensile stress induced in-plane by the thermal expansion mismatch between the substrates and the ?lms observed for ST and KNN ?lms deposited on platinized Al2O3 and Si substrates, respectively, lowers the relative permittivity and remanent polarization values in the parallel plate capacitor geometry. In contrast, a compressive stress/strain observed for ST ?lms deposited on MgO/Pt and KNN ?lms on SrTiO3/Pt substrates result in superior polarization and dielectric permittivity, corresponding to enhanced out-of-plane displacement of Ti4+ ions in ST ?lms and Nb5+ ions in KNN ?lms. It is thus demonstrated that for polycrystalline polar dielectric thin ?lms the relative permittivity and polarization may be optimized through an induced compressive stress state.
关键词: Dielectric properties,Sol-gel,Thin ?lms,Stress/strain,Thermal expansion,Ferroelectric hysteresis
更新于2025-11-14 17:28:48
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Strain-Mediated Substrate Effect on the Dielectric and Ferroelectric Response of Potassium Sodium Niobate Thin Films
摘要: If piezoelectric thin films sensors based on K0.5Na0.5NbO3 (KNN) are to achieve commercialization, it is critical to optimize the film performance using low-cost scalable processing and substrates. Here, sol–gel derived KNN thin films are deposited using a solution with 5% of potassium excess on Pt/TiO2/SiO2/Si and Pt/SrTiO3 substrates, and rapid thermal annealed at 750 ?C for 5 min. Despite an identical film morphology and thickness of ~335 nm, an in-plane stress/strain state is found to be tensile for KNN films on Pt/TiO2/SiO2/Si, and compressive for those on Pt/SrTiO3 substrates, being related to thermal expansion mismatch between the substrate and the film. Correspondingly, KNN films under in-plane compressive stress possess superior dielectric permittivity and polarization in the parallel-plate-capacitor geometry.
关键词: stress/strain,ferroelectric hysteresis,dielectric properties,KNN thin films,sol–gel,thermal expansion
更新于2025-09-04 15:30:14