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[Lecture Notes in Mechanical Engineering] Advances in Thin Films, Nanostructured Materials, and Coatings (Selected Papers from the 2018 International Conference on “Nanomaterials: Applications & Properties”) || Stain Effect on the Properties of Polar Dielectric Thin Films

DOI:10.1007/978-981-13-6133-3_32 出版年份:2019 更新时间:2025-11-14 17:28:48
摘要: Low cost scalable processing and substrates are critical for optimized polar dielectric performance of functional oxide thin ?lms if they are to achieve commercialization. Here, we present a comprehensive investigation of the role low-cost MgO, Al2O3, SrTiO3 and Si substrates on the structural and electrical properties of sol-gel derived SrTiO3 (ST) and K0.5Na0.5NbO3 (KNN) thin ?lms. The substrate is found to have a strong effect on the stress/stain state and, consequently, on the dielectric and ferroelectric response of the ?lms. A tensile stress induced in-plane by the thermal expansion mismatch between the substrates and the ?lms observed for ST and KNN ?lms deposited on platinized Al2O3 and Si substrates, respectively, lowers the relative permittivity and remanent polarization values in the parallel plate capacitor geometry. In contrast, a compressive stress/strain observed for ST ?lms deposited on MgO/Pt and KNN ?lms on SrTiO3/Pt substrates result in superior polarization and dielectric permittivity, corresponding to enhanced out-of-plane displacement of Ti4+ ions in ST ?lms and Nb5+ ions in KNN ?lms. It is thus demonstrated that for polycrystalline polar dielectric thin ?lms the relative permittivity and polarization may be optimized through an induced compressive stress state.
作者: Alexander Tkach,Olena Okhay,André Santos,Sebastian Zlotnik,Ricardo Serrazina,Paula M. Vilarinho,M. Elisabete Costa
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Investigating the role of low-cost substrates on the structural and electrical properties of sol-gel derived SrTiO3 and K0.5Na0.5NbO3 thin films, specifically focusing on how thermal expansion mismatch-induced stress/strain affects dielectric and ferroelectric responses.

Compressive stress induced by thermal expansion mismatch in polycrystalline SrTiO3 and K0.5Na0.5NbO3 thin films enhances out-of-plane ion displacement, leading to superior dielectric permittivity and polarization in parallel plate capacitor geometry. This demonstrates the potential for optimizing electrical properties using low-cost sol-gel processing and commercially available substrates, beneficial for applications like tunable devices and actuators.

The study is limited to polycrystalline thin films and specific substrate types; it does not explore epitaxial films or other substrate materials. The stress effects are primarily thermal expansion-induced, and other factors like impurities or oxygen vacancies are not deeply investigated. The use of parallel plate capacitor geometry may not capture all device-relevant behaviors.

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