研究目的
Investigating the role of low-cost substrates on the structural and electrical properties of sol-gel derived SrTiO3 and K0.5Na0.5NbO3 thin films, specifically focusing on how thermal expansion mismatch-induced stress/strain affects dielectric and ferroelectric responses.
研究成果
Compressive stress induced by thermal expansion mismatch in polycrystalline SrTiO3 and K0.5Na0.5NbO3 thin films enhances out-of-plane ion displacement, leading to superior dielectric permittivity and polarization in parallel plate capacitor geometry. This demonstrates the potential for optimizing electrical properties using low-cost sol-gel processing and commercially available substrates, beneficial for applications like tunable devices and actuators.
研究不足
The study is limited to polycrystalline thin films and specific substrate types; it does not explore epitaxial films or other substrate materials. The stress effects are primarily thermal expansion-induced, and other factors like impurities or oxygen vacancies are not deeply investigated. The use of parallel plate capacitor geometry may not capture all device-relevant behaviors.
1:Experimental Design and Method Selection:
The study uses sol-gel processing for thin film deposition, chosen for its low cost, scalability, and compositional control. X-ray diffraction (XRD) is employed for structural analysis, and impedance spectroscopy and ferroelectric analyzers for electrical characterization.
2:Sample Selection and Data Sources:
Thin films of SrTiO3 (ST) and K
3:5Na5NbO3 (KNN) are deposited on various substrates:
Al2O3/Pt, MgO/Pt for ST, and Si/SiO2/TiO2/Pt, SrTiO3/Pt for KNN. Substrates are selected based on thermal expansion coefficients to induce different stress states.
4:List of Experimental Equipment and Materials:
Equipment includes spin-coater (Chemat Technology KW-4A), XRD diffractometer (Philips X'Pert MPD and MRD), SEM (Hitachi SU-70 and S4100), SFM (Multimode Digital Instrument Nanoscope IIIa), LCR-meter (Agilent E4980A and HP 4284A), ferroelectric analyzer (aixACCT TF Analyzer 1000 and 2000), RTA system (Qualiflow Jipelec JetFirst 200), and cryogenic system (Displex ADP-Cryostat HC-2). Materials include strontium acetate, tetra-n-butyl orthotitanate, acetic acid, 1,2-propanediol, ethanol, potassium acetate, sodium acetate, niobium pentaethoxide, 2-methoxyethanol, and various substrates.
5:2). Materials include strontium acetate, tetra-n-butyl orthotitanate, acetic acid, 1,2-propanediol, ethanol, potassium acetate, sodium acetate, niobium pentaethoxide, 2-methoxyethanol, and various substrates. Experimental Procedures and Operational Workflow:
4. Experimental Procedures and Operational Workflow: For ST films, precursor solution is prepared and spin-coated on substrates at 4000 rpm for 30s, with pyrolysis at 300°C for 1 min per layer, followed by furnace annealing at 900°C for 60 min. For KNN films, solution with 5% potassium excess is spin-coated at 3000 rpm for 30s, pyrolyzed at 350°C for 2 min per layer, and annealed via RTA at 750°C for 5 min. Characterization involves XRD for phase and strain analysis, SEM/SFM for morphology, and electrical measurements using sputtered Au top electrodes.
6:Data Analysis Methods:
Strain is calculated using XRD sin2ψ method, stress is derived from Young's modulus and Poisson's ratio, thermal stress is computed based on TEC differences, and electrical properties are analyzed from hysteresis loops and permittivity measurements.
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scanning electron microscope
SU-70
Hitachi
Used for analyzing surface and cross-sectional morphologies of thin films.
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scanning electron microscope
S4100
Hitachi
Used for analyzing surface and cross-sectional morphologies of thin films.
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LCR-meter
E4980A
Agilent
Used for impedance spectroscopy measurements to obtain dielectric permittivity.
E4980A/E4980AL Precision LCR Meter
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cryogenic system
ADP-Cryostat HC-2
Displex
Used for low-temperature measurements of ST films.
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temperature controller
Model 9650
Scientific Instrument
Used to control the cryogenic system for temperature regulation.
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spin-coater
KW-4A
Chemat Technology
Used for depositing thin films by spin-coating at specified speeds.
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X-ray diffractometer
X'Pert MPD
Philips
Used for crystal phase evolution analysis and strain measurements via XRD.
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X-ray diffractometer
X'Pert MRD
Philips
Used for strain/stress analysis with θ/2θ measurements.
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scanning force microscope
Nanoscope IIIa
Multimode Digital Instrument
Used for surface morphology analysis of thin films.
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LCR-meter
HP 4284A
HP
Used for impedance spectroscopy measurements to obtain dielectric permittivity.
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ferroelectric analyzer
TF Analyzer 1000
aixACCT
Used for evaluating electric field dependence of polarization.
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ferroelectric analyzer
TF Analyzer 2000
aixACCT
Used for evaluating electric field dependence of polarization.
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RTA system
JetFirst 200
Qualiflow, Jipelec
Used for rapid thermal annealing of KNN films.
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