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Flexible and stable organic field-effect transistors using low-temperature solution-processed polyimide gate dielectrics
摘要： Polyimide (PI) has been widely used as a gate dielectric due to its remarkable thermal stability, chemical resistance, and mechanical flexibility. However, the high processing temperature and high surface energy of PI gate dielectrics hinder the realization of flexible and reliable electronic applications with low-cost manufacturing. Here, a low-temperature solution-processed organic field-effect transistor (OFET) is successfully demonstrated using a fully imidized soluble PI gate dielectric. The low temperature processability of soluble PI gate dielectrics is confirmed by investigating the effect of annealing temperature on the dielectric properties and electrical characteristics. By blending 6,13-Bis(triisopropylsilylethynyl)pentacene with polystyrene, the reliability of OFET is considerably enhanced while maintaining high device performance. As a result, OFETs exhibit excellent flexibility and can be integrated with ultrathin parylene substrates without degrading device performance. This work presents the steps to develop flexible and reliable electronic applications with low-cost manufacturing.
关键词： organic field-effect transistors,solution-processed,polyimides,low-temperature,operational stability
更新于2025-11-14 15:19:41
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Performance improvement in photosensitive organic field effect transistor by using multi-layer structure
摘要： In this study, a new approach was introduced for Photo-OFETs as a multi-layer structure. Poly(3-hexylthiophene-2,5-diyl) regioregular (P3HT) and Copper(II) phthalocyanine (CuPc) thin films were used as two different active photo-absorber layers in the same device structure. Poly(methyl methacrylate) (PMMA) was used as a dielectric layer and all devices were fabricated with a top-gate bottom-contact configuration. In order to investigate the effect of the location of each layer on the Photoresponsive organic field-effect transistors (Photo-OFET) performance, five different devices in various structures were produced and analyzed. Surface properties of active layers have been investigated via Atomic Force Microscopy (AFM) and effects of surface roughness on device performance have been discussed. P3HT/CuPc/P3HT multi-layered structure exhibited the best performance in terms of photoresposivity(as 45 mA/W) and photosensitivity (~ 2x103). Photo-OFET based on a multi-layer structure demonstrated superior performance with wider absorbance spectrum region compared to conventional single component devices of P3HT or CuPc. The proposed multi-layer structure can be a model to improve the realization of high performance Photo-OFETs.
关键词： Photoresponsive organic field-effect transistors,Organic field effect transistors,Multilayer structure,Poly(3-hexylthiophene),Photosensitivity,Poly(methyl methacrylate)
更新于2025-09-23 15:23:52
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Effect of Electron Irradiation on the Transport and Field Emission Properties of Few-Layer MoS <sub/>2</sub> Field-Effect Transistors
摘要： Electrical characterization of few-layer MoS2 based field effect transistors with Ti/Au electrodes is performed in the vacuum chamber of a scanning electron microscope in order to study the effects of electron beam irradiation on the transport properties of the device. A negative threshold voltage shift and a carrier mobility enhancement is observed and explained in terms of positive charges trapped in the SiO2 gate oxide, during the irradiation. The transistor channel current is increased up to three order of magnitudes after the exposure to an irradiation dose of 100e-/nm2. Finally, a complete field emission characterization of the MoS2 flake, achieving emission stability for several hours and a minimum turn-on field of ≈ 20 V/μm with a field enhancement factor of about 500 at anode-cathode distance of ~1.5 μm, demonstrates the suitability of few-layer MoS2 as two-dimensional emitting surface for cold-cathode applications.
关键词： electron beam irradiation,2D materials,field emission,molybdenum disulfide,field effect transistors
更新于2025-09-23 15:23:52
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Modulation the electronic property of 2D monolayer MoS2 by amino acid
摘要： 2D molybdenum disulfide (MoS2) has a strong potential for the detection of biomolecules, however, the specific interactions between individual amino acids and MoS2 surface are still unclear. Herein, the adsorption properties and electronic structures of amino acid/MoS2 systems were investigated systematically for the 20 standard amino acids based on density functional theory. The adsorption strength of amino acids on MoS2 monolayer decreases in the following order: TRP > ARG > PHE > TYR > LYS > HIS > PRO > ASN > MET > LEU > ILE > VAL > GLU > GLN > THR > ASP > CYS > SER > ALA > GLY. The band gap of amino acid/MoS2 system is determined by the energy level of HOMO orbit of the adsorbed amino acid, in which the higher energy level of HOMO orbit will result in a smaller band gap. As proof of concept, optical and electrical detection of the MoS2 based transistors with and without amino acid molecules (TRP and CYS) were studied. Adsorption of amino acids on a MoS2 surface allows their chemical information to be transformed into distinct analytically optical and electronic signals, which opens up new possibilities for fabricating novel MoS2 based highly selective biosensors.
关键词： Amino acid,MoS2,Density functional theory,Field effect transistors
更新于2025-09-23 15:23:52
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A New A-D-A’-D-A Conjugated Molecule Entailing Diazapentalene Unit for n-Type Organic Semiconductor
摘要： Conjugated molecules with low lying LUMO levels are demanding for the development of air stable n-type organic semiconductors. In this paper, we report a new A-D-A’-D-A conjugated molecule (DAPDCV) entailing diazapentalene (DAP) and dicyanovinylene groups as electron accepting units. Both theoretical and electrochemical studies manifest that the incorporation of DAP unit in the conjugated molecule can effectively lower the LUMO energy level. Accordingly, thin film of DAPDCV shows n-type semiconducting behaviour with electron mobility up to 0.16 cm2·V-1·s-1 after thermal annealing under N2 atmosphere. Moreover, thin film of DAPDCV also shows stable n-type transporting property in air with mobility reaching 0.078 cm2·V-1·s-1.
关键词： organic field-effect transistors,dicyanovinylene groups,n-type semiconductors,diazapentalene
更新于2025-09-23 15:23:52
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Nitrogen-embedded small-molecule semiconducting materials: Effect of chlorine atoms on their electrochemical, self-assembly, and carrier transport properties
摘要： We reported three novel nitrogen-embedded small molecules 4a, 4b, and 4c, which were synthesized from the condensation reactions of benzo[1,2-b:4,5-b']difuran-2,6(3H,7H)-dione with 1-(2-ethylhexyl)-1H-pyrrolo[2,3-b]pyridine-2,3-dione, 6-chloro-1-(2-ethylhexyl)-1H-pyrrolo[2,3-b]pyridine-2,3-dione, or 4,6-dichloro-1-(2-ethylhexyl)-1H-pyrrolo[2,3-b]pyridine-2,3-dione, respectively. Their optical, electrochemical properties, self-assembly behavior, and carrier transport properties were studied by a range of experimental and theoretical methods, and the effect of chlorine atoms were well discussed. Energy levels of the highest occupied molecular orbitals and the lowest unoccupied ones for these molecular materials locate at ?5.92～?6.02 and ?4.25～?4.37 eV, respectively. Bottom gate/bottom contact field-effect transistors based on 4a, 4b, and 4c exhibited n-channel transport characteristics with the highest electron mobility of 7.57 × 10?3 cm2 V?1 s?1. Thin film microstructure investigations revealed 4a and 4c perform lamellar molecular packing with random orientations to the OTS-treated SiO2 substrate, while 4b conducts a highly crystalline, edge-on, lamellar packing though large grain boundaries exist in its thin film.
关键词： Isoindigo derivatives,Chlorine atoms,Small-molecule semiconductors,Electron mobilities,Organic field-effect transistors
更新于2025-09-23 15:23:52
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Threshold Voltage Control in Organic Field-Effect Transistors by Surface Doping with a Fluorinated Alkylsilane
摘要： Doping is a powerful tool to control the majority charge carrier density in organic field-effect transistors and the threshold voltage of these devices. Here, a surface doping approach is shown, where the dopant is deposited on the prefabricated polycrystalline semiconducting layer. In this study, (tridecafluoro-1,1,2,2-tetrahydrooctyl)-trichlorosilane (FTCS), a fluorinated alkylsilane is used as a dopant, which is solution processable and much cheaper than conventional p-type dopants, such as 2,3,5,6-tetrafluoro-7,7,8,8-tetracyanoquinodimethane (F4TCNQ). In this work, the depositions from the gas phase and from solution are compared. Both deposition approaches led to an increased conductivity and to a shift in the threshold voltage to more positive values, both of which indicate a p-type doping effect. The magnitude of the threshold voltage shift could be controlled by the FTCS deposition time (from vapor) or FTCS concentration (from solution); for short deposition times and low concentrations, the off current stayed constant and the mobility decreased only slightly. In the low doping concentration regime, both approaches resulted in similar transistor characteristics, i.e., similar values of shift in the threshold and turn-on voltage as well as mobility, ION/IOFF ratio and amount of introduced free charge carriers. In comparison with vapor deposition, the solution-based approach can be conducted with less material and in a shorter time, which is critical for industrial applications.
关键词： self-assembled monolayers,fluorinated alkylsilanes,organic field-effect transistors,surface doping,p-type doping
更新于2025-09-23 15:23:52
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Organic Field-Effect Transistor Based Ultrafast, Flexible, Physiological Temperature Sensors with Hexagonal Barium Titanate Nanocrystals in Amorphous Matrix as Sensing Material.
摘要： Organic field-effect transistors (OFETs) with hexagonal barium titanate nanocrystals in amorphous matrix (h-BTNC) as one of the bilayer dielectric system have been fabricated on a highly flexible 10 μm thick polyethylene terephthalate (PET) substrates. The device current and mobility remains same upto a bending radius of 4mm that make it suitable for wearable e-skin applications. h-BTNC films found to be highly temperature sensitive and the OFETs designed based on this material showed ultra-precession (~4.3 mK), low power (~ 1μW at 1.2 V operating voltage), ultrafast response (~24 ms) in sensing temperature over a range from 20 °C to 45 °C continuously. The sensors are highly stable around body temperature and work at various extreme conditions, such as under water, solutions of different pH as well as of various salt concentrations. These properties make this sensor very unique and highly suitable for various healthcare and other applications, where in a small variation of temperature around this temperature range is required to be measured at an ultra-fast speed.
关键词： low power OFETs,electronic skin,temperature sensors,organic field-effect transistors,flexible sensors,healthcare sensors
更新于2025-09-23 15:23:52
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Trapped charge modulation at the MoS2/SiO2 interface by lateral electric field in MoS2 field-effect transistors
摘要： Controlling trapped charges at the interface between a two-dimensional (2D) material and SiO2 is crucial for the stable electrical characteristics in field-effect transistors (FETs). Typically, gate-source bias has been used to modulate the charge trapping process with a narrow dielectric layer with a high gate electric field. Here, we observed that charge trapping can also be affected by the lateral drain-source voltage (VDS) in the FET structure, as well as by the gate-source bias. Through multiple VDS sweeps with increasing measurement VDS range, we demonstrated that the charge trapping process could be modulated by the range of the applied lateral electric field. Moreover, we inserted hexagonal boron nitride (h-BN) layer between the MoS2 and SiO2 layer to explore the charge trapping behavior when a better interface is formed. This study provides a deeper understanding of controlling the electrical characteristics with interface-trapped carriers and lateral electrical fields in 2D materials-based transistors.
关键词： charge trapping,high electric fields,MoS2,field-effect transistors
更新于2025-09-23 15:23:52
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InAs/GaSb thin layers directly grown on nominal (001)-Si substrate by MOVPE for the fabrication of InAs FINFET
摘要： We demonstrated the fabrication of a densely packed InAs fins network for nanoelectronic applications. High crystalline quality GaSb/InAs layers have been grown directly on 300 mm nominal (001)-Si substrate. The InAs was then processed by etching step using a lithographic mask based on block copolymer to obtain sub-20nm width fins. This block copolymer has been optimized to self-assemble into lamellar structure with a period of 30nm, standing perpendicular to the substrate thanks to a neutral layer. STEM-HAADF characterization displays vertical sidewalls InAs fins with a width as low as 15nm spaced by almost 10nm. Early electrical characterizations exhibit a current flow through the connected fins.
关键词： B3 High electron mobility transistors,B3 Field effect transistors,A3 Organometallic vapor phase epitaxy,A1 Etching,B2 Semiconducting III-V materials
更新于2025-09-23 15:22:29