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MBE growth of InAs/GaAs quantum dots on sintered porous silicon substrates with high optical quality??in the 1.3 ??m band
摘要： We report self-assembled InAs/GaAs quantum dots (QDs) monolithically grown on a compliant transferable silicon nanomembrane. The transferable silicon nanomembrane with flat continuous crystalline silicon layer formed via in situ porous silicon sintering is considered a low-cost seed for heteroepitaxy of free-standing single-crystalline foils for photovoltaic cells. In this paper, the compliant feature of transferable silicon nanomembrane has been exploited for direct growth of high-quality InAs/GaAs (QDs) by molecular beam epitaxy. Bright 1.3 μm room temperature photoluminescence from InAs/GaAs QDs has been obtained. The excellent structural and optical qualities of the obtained InAs/GaAs quantum dots offer great opportunities for realizing a low-cost and large-scale integration of III–V-based optoelectronic device on silicon.
关键词： optoelectronic devices,InAs/GaAs quantum dots,molecular beam epitaxy,sintered porous silicon,photoluminescence
更新于2025-09-19 17:13:59
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Photoluminescence from GaAs nanostructures
摘要： The confinement properties of semiconductor nanostructures have promising potential in technological application. The main objective of this study is to describe the dependence of Photoluminescence (PL) intensity on different parameters like temperature, excitation wavelength, time and photon energy of GaAs quantum dots (QDs). The model equations are numerically analyzed and simulated with matlab and FORTRAN codes. The experimental fitted values and physical properties of materials are used as data source for our simulation. The result shows that at low temperature the peak is quite sharp, as temperature increases the PL intensity decreases and get quenched at particular thermal energy.
关键词： quantum confinement,Photoluminescence (PL) intensity,GaAs quantum dots,nanostructures,thermal quenching energy
更新于2025-09-04 15:30:14