研究目的
To describe the dependence of Photoluminescence (PL) intensity on different parameters like temperature, excitation wavelength, time and photon energy of GaAs quantum dots (QDs).
研究成果
The emission spectra of GaAs QD show that there is high PL intensity at low temperature. As the temperature increases, the thermal energy increases and the PL gets quenched. The result also shows that PL intensity decrease as wavelength increases. Sharp peak PL intensity is observed near the mean diameter of GaAs QD. PL intensity observed between limited visible photon energy. As photon energy increased exceeding energy gap the peak PL intensity become lowered. The PL intensity decays with time; this is because of the contributions of radiative and non-radiative transitions.
研究不足
Not explicitly mentioned.
