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Energy transport analysis in a Ga <sub/>0.84</sub> In <sub/>0.16</sub> N/GaN heterostructure using microscopic Raman images employing simultaneous coaxial irradiation of two lasers
摘要： Anisotropic heat transport in a Ga0.84In0.16N/GaN-heterostructure on a sapphire substrate is observed from microscopic Raman images obtained by utilizing coaxial irradiation of two laser beams, one for heating (325 nm) in the GaInN layer and the other for signal probing (325 nm or 532 nm). The increase in temperatures of the GaInN layer and the underlying GaN layer is probed by the 325-nm and 532-nm lasers, respectively, by analyzing the shift in the Raman peak energy of the higher energy branch of E2 modes. The result reveals that energy diffuses across a considerable length in the GaInN layer, whereas the energy transport in the perpendicular direction to the GaN layer is blocked in the vicinity of mis?t dislocations on the heterointerface. This simultaneous irradiation of two lasers for heat generation and probing is effective in the microscopic analysis of energy transport through heterointerfaces.
关键词： coaxial laser irradiation,heat transport,Raman imaging,GaInN/GaN heterostructure
更新于2025-09-23 15:19:57
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Effect of a p-type ZnO insertion layer on the external quantum efficiency of GaInN light-emitting diodes
摘要： The external quantum ef?ciency (EQE) of a GaInN green light-emitting diode (LED) is improved by inserting a p-type ZnO layer between the indium tin oxide electrode and the p-type GaN layer. Several hypotheses are discussed to explain the EQE improvement in the LED with the ZnO layer. It is concluded that higher hole injection ef?ciency and better electron con?nement explain the EQE improvement, which is supported by the results of device simulations showing that the EQE is sensitive to the polarization sheet charge density at the interface between the last quantum barrier and electron-blocking layer.
关键词： external quantum efficiency,electron confinement,GaInN,hole injection efficiency,light-emitting diodes,p-type ZnO
更新于2025-09-16 10:30:52