- 标题
- 摘要
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- 实验方案
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Operation of field emitter arrays under high dose rate gamma-ray irradiation
摘要： Robustness of field emitter arrays (FEA) against high dose rate gamma-ray irradiation was confirmed. The current-voltage characteristics of the FEA were investigated in a vacuum vessel developed for in situ measurements under the irradiation. Although slight increase of the gate current was observed under the irradiation, the insulating layer kept the electrical insulation. As a result, FEA showed the almost identical current-voltage characteristics under the 1.3 kGy h-1 gamma-ray irradiation.
关键词： gamma-ray,image sensor,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Gamma-Ray Irradiation Effects of CdS/CdTe Photodiode for Radiation Tolerant FEA Image Sensor
摘要： The influences of gamma irradiation on CdS/CdTe photodiodes were investigated in order to evaluate their potential for applications to the radiation tolerant field emitter array (FEA) image sensor. It was found that the CdS/CdTe photodiodes have sufficient tolerance to high gamma-ray exposure more than 2 MGy. Furthermore, I-V characteristics of CdS/CdTe photodiodes under gamma-ray irradiation were investigated. In the CdTe thickness of 6.5 ?m, the change rate of current density increased with increase in the reverse bias voltage. On the other hand, in the case of 2.2 ?m, the change rate of current density was almost constant irrespective of the reverse bias voltage. These results suggest that the increase in depletion layer width affects the change rate of current density.
关键词： image sensor,cadmium telluride,field emitter array,radiation tolerance
更新于2025-09-23 15:21:21
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Indoor Localization Using K-Pairwise Light Emitting Diode Image-Sensor-Based Visible Light Positioning
摘要： A great deal of research has been devoted to studying indoor localization schemes for the development of location-based services. This study investigated an indoor localization system, including subsystems of non-line-of-sight (NLOS) image-sensor-based visible light communications (IS-VLC) and the proposed ??-pairwise light emitting diode (LED) image-sensor-based visible light positioning (IS-VLP), in a unified lighting environment. A smartphone received multiple LED identifiers through the designed NLOS IS-VLC and successfully performed the proposed ??-pairwise LED IS-VLP with ?? = 3 to achieve localization, with maximum localization errors of 2.92 cm and 3.54 cm being obtained for ceiling heights of 100 cm and 150 cm, respectively.
关键词： visible light communications (VLC),Image-sensor-based visible light positioning (VLP),light emitting diode (LED)
更新于2025-09-23 15:21:21
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[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Development on Super-thin & High-Pixel CMOS Image Sensor Module
摘要： This paper systematically reports the development on super-thin and high-pixel CMOS image sensor (CIS) module in terms of substrate design, process development, materials selection and reliability test. The as-developed super-thin chip scale package (SCSP) can greatly reduce the CIS module thickness up to 0.4 mm without sacrificing its reliability.
关键词： Super-thin chip scale package,CIS module,CMOS image sensor
更新于2025-09-23 15:21:01
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[IEEE 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Chicago, IL, USA (2019.6.16-2019.6.21)] 2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) - Comparative Investigations of the Effects of Soiling of PV Modules and Systems in Tropical, Subtropical, and Semi-Arid Climate Zones in Brazil
摘要： A 47-million-pixel (47Mp) interline charge-coupled-device (CCD) image sensor, the world’s highest resolution interline-transfer CCD, has been developed for industrial, machine vision, and aerial photography applications. The sensor features a 5.5-μm pixel, 16-output low-noise amplifier and a low-smear, fast-dump gate, horizontal lateral overflow drain, and ON-chip temperature sensor. One challenge to manufacture this large sensor is stitching the sensor with different lithography tools, while still achieving equal or better image performance than its predecessor.
关键词： image sensor,multiple outputs,interline transfer (IT),lithography stitching,Charge-coupled-device (CCD)
更新于2025-09-23 15:19:57
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Handbook of Position Location (Theory, Practice, and Advances, Second Edition) || Visible Light-Based Communication and Localization
摘要： Solid-State device light-emitting diodes (LEDs) are rapidly being embedded in different commonly used devices, as are photodiodes and image sensors. Furthermore, illumination using LED reduces power consumption and motivates decorative illumination design. Because LED-based light sources are widely available, there are several options for visible light communication and positioning systems. This chapter provides an overview of the technologies that have paved the way for visible light communication and positioning systems.
关键词： photodiode,VLC,indoor positioning,VLP,visible light positioning,image sensor,LED,visible light communication
更新于2025-09-19 17:15:36
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[IEEE 2018 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2018.12.1-2018.12.5)] 2018 IEEE International Electron Devices Meeting (IEDM) - A CMOS Proximity Capacitance Image Sensor with <tex>$16\mu \mathrm{m}$</tex> Pixel Pitch, 0.1aF Detection Accuracy and 60 Frames Per Second
摘要： A 16μm pitch 256×256 frames per second CMOS proximity capacitance image sensor fabricated by a 0.18μm CMOS process technology is presented. By the introduction of noise canceling operation, both fixed pattern noise (FPN) and kTC noise are significantly reduced, resulting in the 0.1aF (10-19F) detection accuracy. Proximity capacitance imaging results using the developed sensor are also demonstrated.
关键词： detection accuracy,CMOS,noise canceling,kTC noise,60 fps,proximity capacitance image sensor,0.1aF,FPN
更新于2025-09-19 17:15:36
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Fabrication of a CMOS-based Imaging Chip with Monolithically Integrated RGB and NIR Filters
摘要： Recent developments in multispectral cameras have demonstrated how compact and low-cost spectral sensors can be made by monolithically integrating filters on top of commercially available image sensors. In this paper, the fabrication of a RGB + NIR variation to such a single-chip imaging system is described, including the integration of a metallic shield to minimize crosstalk, and two interference filters: a NIR blocking filter, and a NIR bandpass filter. This is then combined with standard polymer based RGB colour filters. Fabrication of this chip is done in imec's 200 mm cleanroom using standard CMOS technology, except for the addition of RGB colour filters and microlenses, which is outsourced.
关键词： multispectral imaging,RGB,NIR,CMOS image sensor,monolithic integration,optical filters
更新于2025-09-19 17:15:36
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A CMOS SPAD Imager with Collision Detection and 128 Dynamically Reallocating TDCs for Single-Photon Counting and 3D Time-of-Flight Imaging
摘要： Per-pixel time-to-digital converter (TDC) architectures have been exploited by single-photon avalanche diode (SPAD) sensors to achieve high photon throughput, but at the expense of fill factor, pixel pitch and readout efficiency. In contrast, TDC sharing architecture usually features high fill factor at small pixel pitch and energy efficient event-driven readout. While the photon throughput is not necessarily lower than that of per-pixel TDC architectures, since the throughput is not only decided by the TDC number but also the readout bandwidth. In this paper, a SPAD sensor with 32 × 32 pixels fabricated with a 180 nm CMOS image sensor technology is presented, where dynamically reallocating TDCs were implemented to achieve the same photon throughput as that of per-pixel TDCs. Each 4 TDCs are shared by 32 pixels via a collision detection bus, which enables a fill factor of 28% with a pixel pitch of 28.5 μm. The TDCs were characterized, obtaining the peak-to-peak differential and integral non-linearity of ?0.07/+0.08 LSB and ?0.38/+0.75 LSB, respectively. The sensor was demonstrated in a scanning light-detection-and-ranging (LiDAR) system equipped with an ultra-low power laser, achieving depth imaging up to 10 m at 6 frames/s with a resolution of 64 × 64 with 50 lux background light.
关键词： image sensor,light detection and ranging,time-of-flight,SPAD,time-to-digital converter,LiDAR,single-photon avalanche diode,collision detection bus,dynamic reallocation
更新于2025-09-19 17:15:36
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Bifunctional Etalon-Electrode to Realize High Performance Color Filter Free Image Sensor
摘要： Organic photodiodes (OPDs), based on organic semiconductors with high absorption coefficients for visible light, are emerging as potential candidates for replacing silicon photodiodes in image sensors, particularly due to the possibility of realizing a thin thickness and exclusion of color filters, both of which can contribute to a dramatically enhanced degree of integration for image sensors. Despite years of research, techniques have not yet been developed that allow the OPD itself to have color selectivity while maintaining a thin (<1 μm) OPD thickness, in combination with a sufficiently high detectivity (>1012 cm?Hz0.5/W). To solve this issue, we introduce a concept of 'etalon-electrode', which can perform the function of electrode, and simultaneously the function of selective wavelength transparency. A strategically designed OPD architecture consisting of an etalon-electrode, a panchromatic organic active layer, and a counter electrode displays well-defined narrowband R-/G-/B-selective detectivity spectra depending on precision-adjusted thickness composition of the etalon-electrode. While a thin thickness of OPD is preserved at less than 800 nm including electrodes, active layer and other buffer layers for all R-/G-/B-selective OPDs, high average detectivity values over 1012 cm?Hz0.5/W are demonstrated. Furthermore, the characteristic of imparting color selectivity by the etalon-electrode enables a more facile full color patterning, such that a prototype of a 10×10 image sensor with a pixel pitch of 500 μm is realized, resulting in accurate picturing of a well-defined full color image.
关键词： high detectivity,organic photodiodes,etalon-electrodes,full-color imaging,color filter free,image sensor,wavelength selectivity
更新于2025-09-19 17:15:36