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Effect of tunnel junction grown at different growth rates on the optical properties and improved efficiency of InGaP/GaAs double-junction solar cells
摘要： The optical properties of InGaP/GaAs double-junction solar cells (DJSCs) grown by metalorganic chemical vapor deposition were investigated using temperature- and excitation power-dependent photoluminescence (PL) measurements. The InGaP/GaAs DJSC samples studied were the same structures; however, the corresponding tunnel junctions were grown at different growth rates (1.0 and 1.5 ?/s). The PL spectrum measured at 10 K for both samples exhibited a strong main peak at ~1.97 eV with a weak shoulder peak at ~1.94 eV, which could be attributed to the emissions of disordered and ordered InGaP, respectively. A PL peak located at ~1.91 eV was observed under a low excitation power, originating from the donoreacceptor pair (DAP) transition. With the increase in the temperature, the emission related to the DAP of the sample grown at a growth rate of 1.0 ?/s was found to be less dominant compared with the sample grown at a growth rate of 1.5 ?/s. The power-conversion ef?ciency of the sample grown at a growth rate of 1.0 ?/s was improved compared to that of the sample grown at a growth rate of 1.5 ?/s, owing to fewer defect states. Our results help understand the luminescence properties of InGaP/GaAs DJSCs, which could be a crucial factor in fabricating high-ef?ciency solar cells.
关键词： InGaP/GaAs,Growth rate,Photoluminescence,Double-junction solar cell
更新于2025-09-23 15:19:57
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Cation-Exchange-Derived InGaP Alloy Quantum Dots toward Blue Emissivity
摘要： In contrast to a substantial progress of heavy metal-free green and red emitters exclusively from indium phosphide (InP) quantum dots (QDs), the development of non-Cd blue QDs remains nearly unexplored. Synthesis of blue InP QDs with a bright, deep-blue emissivity is not likely viable, which is primarily associated with their intrinsic size limitation. To surmount this challenge, herein, the first synthesis of blue-emissive ternary InGaP QDs through In3+-to-Ga3+ cation exchange strategy is implemented. Pre-grown InP QDs turn out to be efficiently Ga-alloyed at a relatively low temperature of 280oC in the presence of Ga iodide (GaI3) and degree of Ga alloying is also found to be systematically adjustable by varying GaI3 amount. Such cation-exchanged InGaP cores are surface-passivated sequentially with ZnSeS inner and ZnS outer shell. As the amount of GaI3 added for cation exchange increases, the resulting double-shelled InGaP/ZnSeS/ZnS QDs produce consistent blue-shifts in photoluminescence (PL) from 475 to 465 nm, while maintaining high PL quantum yield in the range of 80?82%. Among a series of QD samples above 465 nm-emitting InGaP/ZnSeS/ZnS QDs are further employed as an emitting layer of all-solution-processed electroluminescent device. This unprecedented InGaP QD-based blue device generates maximum values of 1038 cd/m2 in luminance and 2.5% in external quantum efficiency.
关键词： InGaP alloy quantum dots,electroluminescent device,blue emissivity,cation exchange
更新于2025-09-19 17:13:59
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Comparison of operational performance and analytical model of high concentrator photovoltaic thermal system at 2000 concentration ratio
摘要： This paper presents the development of a model based on efficiency equations to evaluate the performance of an HCPV/T system and compares its outputs with data of an operational case-study system installed in Palermo, Italy. The model is validated with data of the operational system to show real performance. The model can evaluate (a) the electric efficiency of the InGaP/InGaAs/Ge TJ solar cell and (b) electrical and thermal power/energy production potential of one module. The model predictions are compared with experimental electric and thermal data by obtaining linear regression plots of experimental results vs. analytical results; the R2 for experimental electrical and thermal results are 0.91 and 0.87 respectively. Using the model, the evaluated average daily analytical and experimental InGaP/InGaAs/Ge TJ solar cell efficiencies are 33 % and 25 % respectively; with a maximum daily experimental value of 30 %. It was found that the annual analytical and potential (based on derived equations from experimental data) electric energy produced by one module are 158 kWh/m2/year and 144 kWh/m2/year respectively, while the annual analytical and potential thermal energy are 375 kWh/m2/year and 390 kWh/m2/year respectively.
关键词： InGaP/InGaAs/Ge TJ solar cell,HCPV/T system,analytical model,thermal energy,electric efficiency
更新于2025-09-19 17:13:59
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1.73 eV AlGaAs/InGaP heterojunction solar cell grown by MBE with 18.7% efficiency
摘要： We report on AlGaAs-based heterojunction solar cells grown by solid source molecular beam epitaxy (MBE). We investigate InGaP and AlGaAs material quality and we demonstrate significant efficiency improvements by combining the best of each alloy: a thick p-AlGaAs base with tunable bandgap, and a thin 50 nm n-InGaP emitter separated by a thin intrinsic AlGaAs layer. We report a certified solar cell conversion efficiency of 18.7% with a 2-μm-thick AlGaAs layer and a bandgap of 1.73 eV, suitable for high efficiency Si-based tandem devices.
关键词： AlGaAs,MBE,InGaP,III-V solar cells,heterostructure
更新于2025-09-19 17:13:59
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Degradation prediction of a γ-ray radiation dosimeter using InGaP solar cells in a primary containment vessel of the Fukushima Daiichi Nuclear Power Station
摘要： Indium gallium phosphide (InGaP) solar cell with a superior high-radiation resistance is expected to be a powerful candidate for a dosimeter under a high-radiation dose rate environment. In this study, in order to predict the lifetime as the dosimeter using the InGaP solar cell, we clarify the effect of minority-carrier diffusion length (L) on a radiation-induced current as a dose signal in the InGaP solar cell by irradiation tests and empirical calculations. In the irradiation tests, the short-circuit current density (Jsc) as a function of the γ-ray dose rate is measured to estimate the L for the InGaP solar cell by irradiation tests. The operational lifetime as a detector using the InGaP solar cell under various dose rates is estimated by using the empirical calculations based on the relation between the L and absorbed dose. The results suggest that the dosimeter using InGaP solar cell is able to be used during more than 10 h in the primary containment vessel of the Fukushima Daiichi Nuclear Power Plant and it has a high potential of being a radiation-resistant dosimeter that would contribute to the decommissioning.
关键词： solar cell,operation lifetime,decommissioning,radiation-induced current,minority-carrier diffusion length,Dosimetry,InGaP compound semiconductor,degradation prediction
更新于2025-09-16 10:30:52
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[IEEE 2019 Compound Semiconductor Week (CSW) - Nara, Japan (2019.5.19-2019.5.23)] 2019 Compound Semiconductor Week (CSW) - Numerical Demonstration of Trade-off between Carrier Confinement Effect and Carrier Transport for Multiple-Quantum-Well Based High-efficiency InGaP Solar Cells
摘要： To promote InGaP solar cell efficiency toward the theoretical limit, one promising approach is to incorporate multiple quantum wells (MQWs) into the InGaP host and improve its open-circuit voltage by facilitating radiative carrier recombination owing to carrier confinement. In this research, we demonstrate numerically that a strain-balanced (SB) In1-xGaxP/In1-yGayP MQW enhances confined carrier density while degrades the effective carrier mobility. However, a smart design of the MQW structure is possible by considering quantitatively the trade-off between carrier confinement effect and carrier transport, and MQW can be advantageous over the InGaP bulk material for boosting photovoltaic efficiency.
关键词： InGaP,carrier confinement effect,photovoltaics,multiple quantum wells
更新于2025-09-12 10:27:22
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High-selectivity NOx sensors based on an Au/InGaP Schottky diode functionalized with self-assembled monolayer of alkanedithiols
摘要： This work was devoted to fabricating high-selectivity NOx gas sensors based on an Au/InGaP Schottky diode. In order to enhance the sensing selectivity and sensing response, a self-assembled monolayer (SAM) of alkanedithiol was used to modify the Schottky contact with an S-Au covalent bond based on the self-assembled property and terminal functional group. The studied SAM/Au/InGaP Schottky diodes were fabricated by semiconductor processes and immersion treatment. The effects of the carbon number (CN) of SAM, the SAM immersion time, and immersion dithiol concentrations were comprehensively studied in this work. In addition, the selectivity and sensing performance of dithiol functionalized Au/InGaP Schottky diodes under different temperatures and NOx concentrations were studied for comparison. In order to obtain the optimal NOx sensing performance, cyclic voltammetry (CV) was employed to study the self-assembled performance of the dithiol monolayer on the Au surface. The sensing responses of 16.5 and 7.2 were obtained under 100 ppm NO2/N2 and NO/N2 at 30oC, respectively, for the studied 1,10-decanedithiol (DDT)/Au/InGaP device. Moreover, compared to other sensing gases, the DDT/Au/InGaP sensing device showed high selectivity toward NOx gas. Furthermore, the theoretical first-order kinetic and thermodynamic theoretical analysis were consistent with the experimental transient and steady-state sensing results. Therefore, the studied SAM/Au/InGaP Schottky diode demonstrated promising results for NOx sensing applications.
关键词： Nitrogen oxides,Gas sensors,Schottky diode,Self-assembled monolayers (SAM),InGaP,Alkanedithiol
更新于2025-09-12 10:27:22
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Photoluminescence characteristics of InGaP/GaAs dual-junction solar cells under current mismatch conditions
摘要： Current mismatch is a critical factor for impairing the conversion efficiency of multi-junction solar cells. Herein, we find a visual phenomenon to distinguish whether the InGaP/GaAs dual-junction solar cell is undergoing current mismatch. It is found that the device at short circuit emits red light under the multiple-source solar simulator when the incident power of the first light source is high. Furthermore, the similar photoluminescence characteristic is also observed when two different lasers are used. These results exhibit that the photoluminescence phenomenon is a facile method to identify the current mismatch of multi-junction solar cells.
关键词： dual-junction solar cells,photoluminescence,current mismatch,InGaP/GaAs
更新于2025-09-11 14:15:04
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[IEEE 2019 International Conference on Power Generation Systems and Renewable Energy Technologies (PGSRET) - Istanbul, Turkey (2019.8.26-2019.8.27)] 2019 International Conference on Power Generation Systems and Renewable Energy Technologies (PGSRET) - Performance Comparison of (GaAS/GaAs) and (InGaP/GaAs) Tunnel Junction in Multi-Junction Solar Cells
摘要： This study presents a comparison of the performance of two multi-junction solar cells in terms of simulated short-circuit current density, open circuit voltage, efficiency and fill factor one of these cells with an InGaP / GaAs structure with a GaAs / GaAs junction tunnel and the other with the same structure but with an InGaP / GaAs hetrojunction tunnel. The silvaco-ticad software has been used to analyze and study these performances for both solar cells, the total thickness is specified to 0.66μm of top solar cell (GaInP), and the thickness of bottom solar cell (GaAs) is 2.64 μm and the tunnel junction with thickness 0.040 μm. He result of the simulation exposures for these multiple junction solar cells gives a conversion efficiency maximum of 24.2343% (AM1.5) would be obtained by choosing the p-In0.5Ga0.5P/n-GaAs tunnel heterojunction.
关键词： silvaco-ticad,tunnel junction,conversion efficiency,InGaP/GaAs,multi-junction solar cell
更新于2025-09-11 14:15:04
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Energy response characterization of InGaP X-ray detectors
摘要： Two custom-made In0.5Ga0.5P p+-i-n+ circular mesa spectroscopic X-ray photodiodes with different diameters (200 μm and 400 μm) and a 5 μm i layer have been characterized for their response to X-ray photons within the energy range 4.95 keV to 21.17 keV. The photodiodes, operating uncooled at 30 °C, were coupled, in turn, to the same custom-made charge-sensitive preamplifier. X-ray fluorescence spectra of high-purity calibration foils excited by a Mo target X-ray tube were accumulated. The energy resolution (Full Width at Half Maximum) increased from 0.79 ± 0.02 keV at 4.95 keV to 0.83 ± 0.02 keV at 21.17 keV, and from 1.12 ± 0.02 keV at 4.95 keV to 1.15 ± 0.02 keV at 21.17 keV, when using the 200 μm and 400 μm diameter devices, respectively. Energy resolution broadening with increasing energy was attributed to increasing Fano noise (negligible incomplete charge collection noise was suggested); for the first time, the Fano factor for In0.5Ga0.5P was experimentally determined to be 0.13, suggesting a Fano limited energy resolution of 145 eV at 5.9 keV. The charge output of each system had a linear relationship with photon energy, across the investigated energy range. The count rate of both spectroscopic systems increased linearly with varying X-ray tube current up to ～105 photons s?1 cm?2 incident photon fluences. The development of In0.5Ga0.5P based spectrometers is particularly important for hard X/γ-ray astronomy, due to the material’s large linear X-ray and γ-ray absorption coefficients and the ability to operate uncooled at high temperatures.
关键词： Fano factor,InGaP,spectroscopy,energy response,X-ray detectors
更新于2025-09-09 09:28:46