研究目的
To find a visual phenomenon to distinguish whether the InGaP/GaAs dual-junction solar cell is undergoing current mismatch.
研究成果
The photoluminescence phenomenon at the short circuit is a feasible method to assess the current mismatch, which can be universally used to analyze multi-junction solar cells with different bandgaps. This method is very convenient and close to the real working environment, applicable in designing all kinds of multi-junction solar cells owning different bandgaps with a better conversion efficiency.
研究不足
The study focuses on InGaP/GaAs dual-junction solar cells and the photoluminescence phenomenon under specific conditions. The applicability to other types of multi-junction solar cells and under different conditions may require further investigation.
1：Experimental Design and Method Selection:
The study utilizes two different optical systems to obtain photoluminescence characteristics and I–V curves of the InGaP/GaAs dual-junction solar cells. One is measured by a multiple-source solar simulator and another one is operated under two different lasers.
2：Sample Selection and Data Sources:
The InGaP/GaAs dual-junction solar cell device is used.
3：List of Experimental Equipment and Materials:
Multiple-source solar simulator, 532 nm laser, 808 nm laser, power meter (Newport-1830-R), beam chopper, condenser lens, sample rack, analog lock-in amplifier (Stanford Research Systems model 830), InGaAs detector, and a computer with the Spectra Sense software (Acton Research, Ver.
4：2), digital semiconductor device measurement (2460, Keithley Instrument). Experimental Procedures and Operational Workflow:
The device is connected with the digital semiconductor machine through a four-point probe method. The photoluminescence spectra and I–V curves are measured under various conditions.
5：Data Analysis Methods:
The photoluminescence spectra and I–V curves are analyzed to assess the current mismatch.
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