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Microstructural Variation at Interface during Fiber Laser Joining of NiTi/Ti6Al4V and effect of Mechanical Strength
摘要： The mechanical analysis of the weldments reveals that minimum tensile strength of the welded joint is more than the ultimate tensile strength of the weakest intermediate material (copper). The study had presents the possibility of using high melting point intermediate layer material during welding of nitinol with other materials to avoid the formation of unwanted phases.
关键词： Fracture analysis,Radiographic,Dissimilar welding,Interlayer,Ti6Al4V,NiTi,Cu
更新于2025-09-23 15:19:57
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Interlayer interactions in 2D WS <sub/>2</sub> /MoS <sub/>2</sub> heterostructures monolithically grown by <i>in situ</i> physical vapor deposition
摘要： The understanding of the interlayer interactions in vertical heterostructures of two-dimensional (2D) transition metal dichalcogenides (TMDCs) is essential to exploit their advanced functions for next-generation optoelectronics and electronics. Here we demonstrate a monolithic stacking of TMDC heterostructures with 2D MoS2 and WS2 layers via in situ physical vapor deposition. We find that the kinetically sputtered atoms are able to overcome the interlayer van der Waals forces between the vertical layers, leading to a substantial number of randomly oriented stacks with various twist angles. Our X-ray photoelectron spectroscopy results reveal a type II heterojunction for 2D WS2/MoS2, showing a band alignment with a conduction band offset of 0.41 eV and a valence band offset of 0.25 eV. In particular, we observed a remarkable interlayer coupling and associated exciton relaxation at the hetero-interface due to the misoriented stacks. By analyzing the band structures and charge densities of the vertical stacks using first-principles calculations, we reveal that the interlayer coupling is a function of the interlayer distance and is relatively insensitive to the angle of misorientation.
关键词： band alignment,2D materials,physical vapor deposition,interlayer coupling,heterostructures
更新于2025-09-19 17:15:36
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35.3: Self-formed nano-scale metal-oxide contact interlayer for amorphous silicon tin oxide TFTs
摘要： The formation of metal oxide interlayer is induced by pre-annealing process in the amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes. Cross-sectional high-resolution transmission electron microscopy image confirmed the formation of ~8nm MoOx interlayer. The introduction of MoOx interlayer between Mo electrodes and a-STO improved the electron injection in a-STO TFT. Mo adjacent to the a-STO semiconductor gets oxygen atoms from the oxygen-rich surface of a-STO film to form MoOx interlayer. The self-formed MoOx interlayer acting as an efficient interface modification layer could conduce to the stepwise internal transport barrier formation while blocking Mo atoms diffuse into a-STO layer, which would contribute to the formation of ohmic contact between Mo and a-STO film.
关键词： self-formed interlayer,amorphous Silicon-Tin-Oxide,work function,Thin film transistors,ohmic contact
更新于2025-09-19 17:15:36
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Enhancing Small-Molecule Organic Photodetector Performance for Reflectance-Mode Photoplethysmography Sensor Applications
摘要： Organic photodetector performance for enhancing the sensing abilities of an organic photoplethysmography sensor was investigated. Optimized organic photodetector with an anode interlayer and a cathode interlayer showed reverse dark current density of 22 nA cm-2 at ?2 V and the external quantum efficiency of 53.3% at 0 V. This organic photodetector was fabricated monolithically with an organic light emitting diode on a glass substrate to achieve a reflectance-mode photoplethysmography sensor, demonstrating the impact of organic photodetector device performance on the measured photoplethysmography signal for sensing applications. Furthermore, we estimated the optimal sensor design for circular geometry in terms of device area and distance between organic light emitting diode and organic photodetector to maximize the signal-noise ratio and lower the power consumption of organic photoplethysmography sensor devices. For most favorable photoplethysmography sensor design, signal strength of 130 mV with 600 μW power consumption was measured.
关键词： detectivity,Organic photodetector,OLED,Interlayer,dark current density,signal to noise ratio (SNR),PPG Sensor
更新于2025-09-19 17:13:59
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A Hierarchical Three-Dimensional Porous Laser-Scribed Graphene Film for Suppressing Polysulfide Shuttling in Lithiuma??Sulfur Batteries
摘要： Lithium-sulfur (Li-S) battery is a promising next-generation rechargeable battery with high energy density. Given the outstanding capacities of sulfur (1675 mAh g?1) and lithium metal (3861 mAh g?1), Li-S battery theoretically delivers an ultra-high energy density of 2567 Wh kg?1. However, this energy density cannot be realized due to several factors, particularly the shuttling of polysulfide intermediates between the cathode and anode, which causes serious degradation of capacity and cycling stability of a Li-S battery. In this work, a simple and scalable route was employed to construct a free-standing laser scribed graphene (LSG) interlayer which effectively suppresses the polysulfide shuttling in Li-S batteries. Thus, a high specific capacity (1160 mAh g-1) with excellent cycling stability (80.4% capacity retention after 100 cycles) has been achieved due to the unique structure of hierarchical three-dimensional pores in the free-standing LSG.
关键词： High-capacity,Lithium-sulfur battery,Graphene,Polysulfide shuttling,Interlayer,Laser Scribed Graphene
更新于2025-09-19 17:13:59
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Improving the Performance and Stability of Perovskite Light-Emitting Diodes by a Polymeric Nanothick Interlayer-Assisted Grain Control Process
摘要： CsPbBr3 is a promising light-emitting material due to its wet solution processability, high photoluminescence quantum yield (PLQY), narrow color spectrum, and cost-effectiveness. Despite such advantages, the morphological defects, unsatisfactory carrier injection, and stability issues retard its widespread applications in light-emitting devices (LEDs). In this work, we demonstrated a facile and cost-effective method to improve the morphology, efficiency, and stability of the CsPbBr3 emissive layer using a dual polymeric encapsulation governed by an interface-assisted grain control process (IAGCP). An eco-friendly low-cost hydrophilic polymer poly(vinylpyrrolidone) (PVP) was blended into the CsPbBr3 precursor solution, which endows the prepared film with a better surface coverage with a smoothened surface. Furthermore, the poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate) (PEDOT:PSS)/emissive layer interface further promotes the film quality and the performance of the derived LED. It is mainly attributed to three major consequences: (i) reduced grain size of the emissive layer, which facilitates charge recombination, (ii) reduced current leakage due to the enhanced electron-blocking effect, and (iii) improved color purity and air stability owing to better defect passivation. As a result, the optimized composite emissive film can retain the luminescence properties even on exposure to ambient conditions for 80 days and ～62% of its initial PL intensity can be preserved after 30 days of storage without any encapsulation.
关键词： efficiency,light-emitting diodes,polymeric nanothick interlayer,grain control process,CsPbBr3,stability
更新于2025-09-19 17:13:59
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Room-temperature processed ZrO2 interlayer towards efficient planar perovskite solar cells
摘要： The Sn-doped In2O3 transparent conductive (ITO) electrode in planar perovskite solar cells (PSCs) is modified by zirconia (ZrO2) interlayer with low-temperature process. Here the ZrO2 film is prepared by ultraviolet (UV) treatment at room temperature. The effects of the inserted ZrO2 interlayer on the performance of CH3NH3PbI3-xClx-based PSCs have been systemically studied. After optimizing the process, the champion efficiency of PSC with UV-treated ZrO2 interlayer is 19.48%, which is larger than that of the reference PSC (15.56%). The improved performance in the modified devices is primarily ascribed to the reduced trap states and the suppressed carrier recombination at the ITO/SnO2 interface. Our work provides a facile route to boost the photovoltaic performance of PSCs by modifying the surface of transparent conductive electrode at room temperature.
关键词： Photoelectric properties,ITO/SnO2 interface modification,Ultraviolet (UV) treatment,Planar perovskite solar cell,Room-temperature processed ZrO2 interlayer
更新于2025-09-19 17:13:59
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Organic functional materials: recent advances in all-inorganic perovskite solar cells
摘要： Although the power conversion e?ciency (PCE) of organic–inorganic hybrid perovskite solar cells (PSCs) is comparable to those of commercial solar cells, a challenging problem of instability hampers their further commercialization. In recent years, in comparison with organic–inorganic hybrid PSCs, cesium-based all-inorganic perovskites show better light, moisture and especially thermal stability, and therefore they have exhibited great potential and received widespread attention. However, an unavoidable issue is that the PCE of all-inorganic PSCs still lags behind that of hybrid perovskite devices. To solve this problem, some organic or inorganic interlayer materials are introduced into all-inorganic PSCs as additive, passivation agent and charge transport materials to improve device performance. Compared to inorganic materials, organic materials present some advantages, such as energy level controllability, molecular structure diversity, and surface wettability modi?cations. Thus, the PCE of all-inorganic PSCs has been signi?cantly improved through the use of organic materials. In this review, we summarized the recent strategies for improving the performance of all-inorganic PSCs through organic interlayer materials, including crystallization control, defect passivation, interface engineering, and expanding the light harvesting capability. Finally, a perspective on challenges and opportunities is proposed in the ?eld.
关键词： organic interlayer materials,crystallization control,defect passivation,all-inorganic perovskite solar cells,light harvesting,interface engineering
更新于2025-09-19 17:13:59
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An Ultravioleta??Deposited MoO <sub/>3</sub> Film as Anode Interlayer for Higha??Performance Polymer Solar Cells
摘要： An ultraviolet-deposited MoO3 film is developed as anode interlayer based on molybdenum(V) chloride as precursor. The ultraviolet-deposited MoO3 film is prepared from the precursor film (spin coated from its solution) with ultraviolet irradiation treatment, and the preparation process of the MoO3 film is facile, low cost, and compatible with mass production and flexible substrate. The composition of the MoO3 film is analyzed by X-ray photoelectron spectroscopy. The work function as well as the surface morphology and wettability of indium tin oxide (ITO) modified by the MoO3 film are investigated by ultraviolet photoelectron spectroscopy, atomic force microscopy, and contact angle tester, respectively, where the analyses show the ITO modified by the MoO3 anode interlayer can offer excellent energy level alignment and interface contact with active layer. The photovoltaic performance of nonfullerene polymer solar cells (PSCs) based on the MoO3 anode interlayer is researched with typical and relatively low-cost PBDB-T:ITIC as active layer, and the ITO/MoO3-based device shows the highest power conversion efficiency of 9.27% compared with the bare ITO-based device (3.69%) and the ITO/PEDOT:PSS-based device (9.15%). The results demonstrate the great potential of the ultraviolet-deposited MoO3 film as anode interlayer for high-performance PSCs.
关键词： ultraviolet irradiation,photovoltaic performance,MoO3 film,polymer solar cells,anode interlayer
更新于2025-09-19 17:13:59
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Interlayer Transition in a vdW Heterostructure toward Ultrahigh Detectivity Shortwave Infrared Photodetectors
摘要： Van der Waals (vdW) heterostructures of 2D atomically thin layered materials (2DLMs) provide a unique platform for constructing optoelectronic devices by staking 2D atomic sheets with unprecedented functionality and performance. A particular advantage of these vdW heterostructures is the energy band engineering of 2DLMs to achieve interlayer excitons through type-II band alignment, enabling spectral range exceeding the cutoff wavelengths of the individual atomic sheets in the 2DLM. Herein, the high performance of GaTe/InSe vdW heterostructures device is reported. Unexpectedly, this GaTe/InSe vdWs p–n junction exhibits extraordinary detectivity in a new shortwave infrared (SWIR) spectrum, which is forbidden by the respective bandgap limits for the constituent GaTe (bandgap of ≈1.70 eV in both the bulk and monolayer) and InSe (bandgap of ≈1.20–1.80 eV depending on thickness reduction from bulk to monolayer). Specifically, the uncooled SWIR detectivity is up to ≈1014 Jones at 1064 nm and ≈1012 Jones at 1550 nm, respectively. This result indicates that the 2DLM vdW heterostructures with type-II band alignment produce an interlayer exciton transition, and this advantage can offer a viable strategy for devising high-performance optoelectronics in SWIR or even longer wavelengths beyond the individual limitations of the bandgaps and heteroepitaxy of the constituent atomic layers.
关键词： interlayer transitions,2D materials,vdW heterostructures,broadband photodetectors,shortwave infrared
更新于2025-09-19 17:13:59