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Interface-enhanced organic solar cells with extrapolated T80 lifetimes of over 20 years
摘要： With recent advances in the power conversion efficiency (PCE) of organic solar cells (OSCs) based on novel donor and non-fullerene acceptor (NFAs), improving the stability of these systems has become the most important issue for their practical applications. Herein, an efficient and highly stable OSC, containing a novel polymer donor and a non-fullerene acceptor system, is reported. The OSC is based on an inverted device structure that utilizes a self-assembled fullerene monolayer (C60-SAM) as the cathode modification layer, an efficient and highly stable OSC composes of a polymer donor of poly[4,8-bis(5-(2-ethylhexyl)thiophen-2-yl)benzo[1,2-b:4,5-b’]dithiophene-alt-3-fluorothie-n o[3,4-b]thiophene-2-carboxylate] (PTB7-Th) and a non-fullerene acceptor of (2,2'-((2Z,2'Z)-(((4,4,9,9-Tetrakis(4-hexylphenyl)-4,9-dihydro-sindaceno[1,2-b:5,6-b']dithiophene-2,7-diyl)bis(4-((2ethylhexyl)oxy)thiophene-5,2-diyl))bis(methanylylidene))bis(5,6-diflu oro-3-oxo-2,3-dihydro-1H-indene -2,1-diylidene))dimalononitrile) (IEICO-4F) is presented, showing a PCE of 10%. It further achieves an extrapolated T80 lifetime (the time required to reach 80% of initial performance) of 34,000 h, operating under one sun illumination equivalent. Based on an estimated solar irradiance of 1500 kWh/(m2 year) for China, a potential lifetime of 22 years is inferred for the OSC. Further investigation reveals that the reported C60-SAM modification stabilizes the OSC active layer morphology by lowering the surface energy of the underlying ZnO electron transport layer and suppressing trap-assisted recombination, thereby improving photostability. The results of this work establish important guidelines for the development of non-fullerene based OSCs with enhanced stability and pave the way for the commercialization of OSC technology.
关键词： interlayer modification,non-fullerene acceptor,photostability,green solvent,organic solar cell
更新于2025-09-19 17:13:59
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Solution-processable porous organic polymer for tailoring the charge transport property of planar perovskite solar cells
摘要： Herein, a soluble, highly branched, and cross-linked polymer was prepared with alkyl-modified perylene and melamine motifs by adapting the synthetic strategy for porous organic polymers (T-POP). With the expanded surface area of such a polymer relative to the linear one-dimensional conjugated polymers, the intermolecular contact between the optically active units such as perylene motifs in the back bones or branches increased in frequency, resulting in strong π-π stacking, which facilitated the charge charrier transport in planar perovskite solar cells. Additionally, its amorphous nature afforded a smooth surface without severe aggregation, which typically limits the continuous charge carrier pathways. However, the films showed rough surface morphology when the substrates such as indium tin oxide glass with high hydrophilic property were used, while the films showed smooth surfaces when it was deposited on PC70BM, which was one of the device components. Furthermore, by comparing its frontier orbital levels with those of the other components in the devices, it was confirmed that T-POP could be applied as a secondary electron transport layer on the PC70BM layer. As a result, the stability of the perovskite layer increased with a concomitant increase in the hydrophobicity of the top layer with T-POP and the power conversion efficiencies of the functioning devices increased up to 13% with respect to the devices without T-POP enhancing electron transport efficacy.
关键词： Perovskite solar cells,Electron mobility,Electron transport,Interlayer,Porous organic polymer
更新于2025-09-19 17:13:59
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Enhanced bonding strength of InP/Si chip-on-wafer by plasma-activated bonding using stress-controlled interlayer
摘要： This study demonstrates high-yield InP/Si CoW plasma-activated bonding using a chip holder with pockets, the depth of which is precisely controlled. Additionally, finite element simulations are used to determine that the stress-controlled interlayer consisting of InP-based epitaxial layers with tensile strain effectively suppresses stress at the InP/Si bonding interface, which affects the bonding strength. Thus, a high bonding strength of 20 MPa in 2 mm × 2 mm InP chips on the Si substrate was achieved by introducing a superlattice structure consisting of GaInAsP and InP (with tensile strain) as the stress-controlled interlayer.
关键词： chip-on-wafer,plasma-activated bonding,bonding strength,InP/Si,stress-controlled interlayer
更新于2025-09-19 17:13:59
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Perovskite Quantum Dot Light‐Emitting Diodes Using Atomic Layer Deposited Al <sub/>2</sub> O <sub/>3</sub> and ZnO Interlayers
摘要： Green emitting CsPbBr3 Perovskite quantum dot light-emitting diodes (PQD-LEDs) were fabricated in a standard device structure with insertion of atomic layer deposited interlayer. This interlayer enables deposition of solution processed ZnO nanoparticles on top of CsPbBr3 PQDs directly, and successfully passivate PQD surface from polar solvent damages during ZnO spin-casting.
关键词： atomic layer deposition,Quantum dot,interlayer,light-emitting diode,Perovskite
更新于2025-09-19 17:13:59
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Annealed Polycrystalline TiO <sub/>2</sub> Interlayer of the n-Si/TiO <sub/>2</sub> /Ni Photoanode for Efficient Photoelectrochemical Water Splitting
摘要： High photovoltage generation from a photoelectrode is important for efficient solar-driven water splitting. Here, we report a thermal treatment process that greatly enhances photovoltage generation from an n-Si/TiO2/Ni photoanode. By selectively annealing the TiO2 interlayer, the photoanode generates a high photovoltage of 570 mV, which is very competitive as compared with photovoltages produced using other similar metal?insulator?semiconductor structures with earth-abundant metal catalysts. Different annealing conditions and junction layer thicknesses were systematically investigated. It is found that the optimal annealing temperature occurs between 500 and 600 °C. Within this temperature range, the deposited amorphous Ti is converted into polycrystalline anatase phase TiO2. The optimal annealing time scales linearly with TiO2 thickness and inversely with annealing temperature. The large photovoltage generation is attributed to the reduced defect states and improved junction barrier height by the annealed TiO2 interlayer. This study demonstrates that thermal annealing offers an attractive approach to modify the TiO2 interlayer material’s properties for photovoltage optimization.
关键词： photovoltage,photoanode,water splitting,thermal annealing,photoelectrochemistry,junction interlayer
更新于2025-09-19 17:13:59
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Effect of Interlayer Cooling Time, Constraint and Tool Path Strategy on Deformation of Large Components Made by Laser Metal Deposition with Wire
摘要： Laser metal deposition with wire (LMD-w) is a developing additive manufacturing (AM) technology that has a high deposition material rate and efficiency and is suitable for fabrication of large aerospace components. However, control of material properties, geometry, and residual stresses is needed before LMD-w technology can be widely adopted for the construction of critical structural components. In this study, we investigated the effect of interlayer cooling time, clamp constraints, and tool path strategy on part distortion and residual stresses in large-scale laser additive manufactured Ti-6Al-4V components using finite element method (FEM). The simulations were validated with the temperature and the distortion measurements obtained from a real LMD-w process. We found that a shorter interlayer cooling time, full clamping constraints on the build plates, and a bidirectional tool path with 180° rotation minimized part distortion and residual stresses and resulted in symmetric stress distribution.
关键词： Ti-6Al-4V,part deformation,process parameter optimization,interlayer cooling time,large-scale additive manufacturing
更新于2025-09-16 10:30:52
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Three-pass laser welding of Ti alloy-stainless steel using Nb and Ni interlayers
摘要： Nb:YAG laser welding of TC4 titanium (Ti) alloy and 301 L stainless steel (SS) were carried out through interlayers Nb and Ni. The laser beam was concentrated at the Ti alloy-Nb interface, Nb-Ni interface and Ni-SS interface, respectively, to ensure that whole Nb and Ni interlayer was not melted. Three-pass welding was employed, which involves the creation of a joint with three welding zones separated by the remaining unmelted Nb and Ni. Interlayer Nb and Ni were employed to prevent the formation of Ti-Fe intermetallics and improve the microstructure and the properties of the Ti alloy-SS joint. The joint fractured at the welding zone of the Nb-Ni interface with the tensile strength of 269 MPa.
关键词： Interlayer,Tensile strength,Microstructure,Welding
更新于2025-09-16 10:30:52
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Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE
摘要： Self-assembled InN nanocolumns were grown at low temperatures by plasma-assisted molecular beam epitaxy with a high crystalline quality. The self-assembling procedure was carried out on AlN/Al layers on Si(111) substrates avoiding the masking process. The Al interlayer on the Si(111) substrate prevented the formation of amorphous SiN. We found that the growth mechanism at 400 ?C of InN nanocolumns started by a layer-layer (2D) nucleation, followed by the growth of 3D islands. This growth mechanism promoted the nanocolumn formation without strain. The nanocolumnar growth proceeded with cylindrical and conical shapes with heights between 250 and 380 nm. Detailed high-resolution transmission electron microscopy analysis showed that the InN nanocolumns have a hexagonal crystalline structure, free of dislocation and other defects. The analysis of the phonon modes also allowed us to identify the hexagonal structure of the nanocolumns. In addition, the photoluminescence spectrum showed an energy transition of 0.72 eV at 20 K for the InN nanocolumns, con?rmed by photore?ectance spectroscopy.
关键词： InN nanocolumns,Al interlayer,molecular beam epitaxy,self-assembly of nanocolumns
更新于2025-09-16 10:30:52
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Efficient polymer solar cells that use conjugated polyelectrolyte with a tetravalent amine-end side chain
摘要： Conjugated polyelectrolyte based on benzotriazole (BT) with tetravalent amine-end side chain and benzothiadiazole (BTz) conjugated alternating repeat units, named PBTBTz-TMAI was initially designed and synthesized. Fullerene- and non-fullerene-based polymer solar cells were fabricated using PBTBTz-TMAI as the cathode interlayer. Consequently, power conversion efficiencies of 8.4% and 10.5% were achieved for the fullerene PTB7:PC71BM-based and non-fullerene PBDB-T:ITIC-based single-junction devices, respectively. The enhanced performance is attributed to the appropriate energy level alignment of the active layer with PBTBTz-TMAI and the efficient electron transfer from the active layer to the cathode electrode.
关键词： cathode interlayer,non-fullerene,tetravalent amine-end,conjugated polyelectrolyte,polymer solar cells
更新于2025-09-12 10:27:22
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Two pass laser welding of TC4 Titanium alloy to 301L stainless steel via pure V interlayer
摘要： Pulsed laser welding of TC4 Titanium alloy to SUS301 L stainless steel with V sheet as inter-layer was applied. V does not form any intermetallic compound with Ti and Fe. V is used as an interlayer for joining Titanium alloy and stainless steel that the laser successively focused near the Titanium alloy-V and V-stainless steel interfaces. In this way, only two weld zones and unmelted V interlayer can be produced, but also by microstructure of residual solid V interlayer situated between two separately formed weld zones. The unmelted V interlayer acted as a barrier to mixing of the two base materials. The unmelted part of V interlayer also acted as a diffusion barrier between Ti and Fe to avoid the Ti-Fe intermetallics. The tensile strength of joint was 587 MPa accordingly.
关键词： Microstructure,Weld zone,Welding,TC4 Titanium alloy,SUS301L stainless steel,V Interlayer
更新于2025-09-12 10:27:22