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Optical Band Gap, Local Work Function and Field Emission Properties of MBE Grown β-MoO3 Nanoribbons
摘要： Monoclinic molybdenum trioxide (β-MoO3) nanostructures (shaped like nanoribbons: NRs) were grown on Si(100), Si(5512) and fluorine-doped tin oxide (FTO) by molecular beam epitaxy (MBE) technique under ultra-high vacuum (UHV) conditions. The dependence of substrate conditions and the effective thickness of MoO3 films on the morphology of nanostructures and their structural aspects were reported. The electron microscopy measurements show that the length and the aspect ratio of nanostructures increased by, 260% without any significant change in the width for a change in effective thickness from 5 nm to 30 nm. NRs are grown along <011> for all the effective thickness of MoO3 films. Similarly, when we increased the film thickness from 5 nm to 30 nm, the optical band gap decreased from 3.38± 0.01eV to 3.17± 0.01eV and the local work function increased from 5.397 ± 0.025 eV to 5.757 ± 0.030 eV. Field emission turn-on field decreased from 3.58 V/μm for 10-μA/cm2 to 2.5 V/μm and field enhancement factor increased from 1.1×104 to 5.9×104 for effective thickness variation of 5 nm to 30 nm β-MoO3 structures. The β-MoO3 nanostructures found to be much better than the α-MoO3 nanostructures due to low work function, low turn on field and high field enhancement factor, and are expected to be useful applications.
关键词： β-MoO3 nanostructures,Field emission and Kelvin probe force microscopy (KPFM),Optical band gap,Molecular beam epitaxy (MBE),Electron microscopy
更新于2025-09-23 15:22:29
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Microscopy and Spectroscopy Study of Nanostructural Phase Transformation from β-MoO3 to Mo under UHV – MBE Conditions
摘要： We report a simple reduction of molybdenum oxide (β-MoO3) grown on reconstructed Si(100) by thermal annealing in ultra-high vacuum (UHV) using molecular beam epitaxy (MBE). By increasing the substrate temperature during deposition or the annealing temperature after growth, the morphologies of as-deposited structures were found to vary from nanoribbons (NRs) of β-MoO3 to nanoparticles (NPs) of Mo. The change in morphologies have been associated with a structural transition from β-MoO3 to MoO2 at 400 °C and MoO2 to Mo at 750 °C. The in-situ X-ray photoelectron spectroscopy (XPS) measurements revealed a shift of the Mo 3d peaks towards lower binding energies, representing the reduction in Mo oxidation states until a pure Mo 3d peak at 750°C was observed. The ex-situ KPFM measurements showed a decrease in the local work function (Φ) (from ≈ 5.27 ± 0.05 eV to ≈ 4.83 ± 0.05 eV) with increasing substrate temperature. A gradual reduction of the band gap from ≈ 3.32 eV for β-MoO3 NRs to zero band gap for Mo NPs is also observed during the annealing up to 750 °C.
关键词： in-situ XPS,KPFM,molecular beam epitaxy (MBE),Mo nanoparticles,β-MoO3 nanoribbons,phase transition
更新于2025-09-23 15:22:29
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Current improvement of substrate structured Sb<sub>2</sub>S<sub>3</sub> solar cells with MoSb<sub>2</sub> interlayer
摘要： Sb2S3 solar cells with substrate structure usually suffer from pretty low JSC, due to its wide bandgap (~1.7 eV) and poor carrier transport. As a one-dimensional material, Sb2S3 exhibits orientation-dependent carrier transport property. Herein, a thin MoSe2 layer is directly synthesized on the Mo substrate followed by the deposition of Sb2S3 thin film. X-Ray Diffraction (XRD) patterns confirm that a thin MoSe2 layer can improve the crystallization of Sb2S3 film and induce (hk1) orientations, which could provide more carrier transport channels. Kelvin probe force microscopy (KPFM) results suggest this modified Sb2S3 film has a benign surface with less defects and dangling bonds. The variation of surface potential of Sb2S3 indicates a much efficient carrier separation. Consequently, the power conversion efficiency (PCE) of substrate structured Sb2S3 thin film solar cell is improved from 1.36% to 1.86%, which is the best efficiency of the substrate structured Sb2S3 thin film solar cell, and JSC significantly increase to 13.6 mA/cm2. According to EQE and C-V measurements, the modified crystallization and elevated built-in electric field are the main causes.
关键词： built-in electric filed,KPFM,Sb2S3 thin film,super thin MoSe2
更新于2025-09-19 17:13:59
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Energy level alignment and nanoscale investigation of a-TiO <sub/>2</sub> /Cu-Zn-Sn-S interface for alternative electron transport layer in earth abundant Cu-Zn-Sn-S solar cells
摘要： Efficiency of earth abundant and pure sulfide kesterite Cu-Zn-Sn-S (CZTS) solar cell has been stagnant around 9.4% for years, while its counterpart Cu-In-Ga-Se (CIGS) reports an efficiency of more than 22%. Low open circuit voltage (VOC) is the major challenging factor for low efficiency due to severe nonradiative interface recombinations. The existence of higher defect states at the conventional CZTS-CdS interface due to undesirable energy level alignment and lattice misfit promotes trap-assisted recombinations and results in low VOC. In this work, amorphous TiO2 (Eg = 3.8 eV) is proposed as a promising substitute to the conventional and low bandgap CdS (Eg = 2.4 eV) layer. The surface and interface of the CZTS-TiO2 layer were investigated using X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS). The result reveals favorable "spike"-like conformations at the CZTS-TiO2 interface with a conduction band offset value of 0.17 eV. The nanoscale probing of the interface by Kelvin probe force microscopy across CZTS-TiO2 layers shows a higher potential barrier for interface recombination at CZTS-TiO2 in contrast to the conventional CZTS-CdS interface. Finally, the fast decay response and lower persistent photoconductivity of photogenerated carriers for CZTS-TiO2 heterojunction based photodetectors further validate our results. The energy level alignment and nanoscale interface studies signify TiO2 as a promising alternate buffer layer for earth abundant CZTS solar cells.
关键词： XPS,TiO2,CZTS,CdS,energy level alignment,KPFM,UPS,solar cells,interface recombination
更新于2025-09-16 10:30:52
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Implementation of data-cube pumpa??probe KPFM on organic solar cells
摘要： An implementation of pump–probe Kelvin probe force microscopy (pp-KPFM) is reported that enables recording the time-resolved surface potential in single-point mode or over a 2D grid. The spectroscopic data are acquired in open z-loop configuration, which simplifies the pp-KPFM operation. The validity of the implementation is probed by measurements using electrical pumping. The dynamical photoresponse of a bulk heterojunction solar cell based on PTB7 and PC71BM is subsequently investigated by recording point-spectroscopy curves as a function of the optical power at the cathode and by mapping 2D time-resolved images of the surface photovoltage of the bare organic active layer.
关键词： Kelvin probe force microscopy (KPFM),time-resolved measurements,bulk heterojunctions,organic photovoltaics,pump–probe configuration,photocarrier dynamics
更新于2025-09-16 10:30:52