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Air-stable N-doped black phosphorus transistor by thermal deposition of metal adatoms
摘要： In this work, a simple and effective thermal deposition method is described to enhance the stability and achieve n-doping of two-dimensional black phosphorus (BP), resulting the successful fabrication of logic devices. By doping with Al adatoms, the stability of BP against oxidation is enhanced and the transfer characteristics are maintained for several days under ambient conditions. Furthermore, the resulting BP is n-doping showing a negative-shifted threshold voltage and enhanced electron mobility. The mechanism of Al doping is investigated by first-principles calculation and Al induces a downward shift of the conduction band minimum and increases the Femi level. In addition, integration of bare BP and Al-doped BP enables the fabrication of various logic devices such as inverters and p?n diodes. This work reveals a facile strategy to simultaneously enhance the stability and regulate the conductivity of BP by doping with metal adatoms boding well for device applications.
关键词： n-doping,stability,black phosphorus,thermal deposition,first-principles calculation
更新于2025-09-23 15:23:52
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Density functional theory study of aluminium and chromium doped Yttrium ion garnet
摘要： Density functional theory has been performed to investigate the atomic structure, electronic and magnetic properties of Al3+ and Cr3+ co-doped cubic Y3Fe5O12 (YIG) garnet crystal. Results show that Al3+ and Cr3+ ions are energetically substitution of Fe3+ at the tetrahedral and octahedral sites in YIG, respectively. The doping concentration do not affect the preferential site occupancy for separate individual substitution. The magnetic moment increases and decreases for the single Cr and Al element doping, respectively. The magnetic moment and lattice constant decreases with the increase of Al–Cr concentrations. The magnetic moment decrease from 5.0 to 3.875 μB linearly with x increases from 0 to 0.4 in Y3AlxCrxFe5?xO12. These results indicate that doping can be adopted for the modi?cation of magnetic properties of YIG.
关键词： doping,magnetic moment,density functional theory,Y3Fe5O12 (YIG)
更新于2025-09-23 15:23:52
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Study of the extrinsic properties of Copper doped Cadmium Sulfide thin film by hydrothermal assisted CBD method
摘要： Cadmium sulphide (CdS) and Cu doped CdS film were deposited onto commercially available FTO glass substrate by the hydrothermal assisted chemical bath deposition (HACBD). The effect of doping on the properties of CdS films were investigated. Optical, morphological, structural and photoluminescence properties of deposited films were investigated using UV-Vis spectroscopy, SEM, FTIR, X-ray diffraction and photoluminescence spectroscopy (PL). Lower value of the bandgap energy was observed for the Cu doped CdS films as compared to those of the undoped CdS films. XRD patterns reveal a cubic and hexagonal crystal structure phase with (1 1 1) and (0 0 2) as the preferential orientation having an average crystallite size of 18nm. SEM images reveal a change in the morphology of CdS and Cu-CdS thin films from spherical to disc like structures. PL spectra showed strong emission peak in visible region for both doped and undoped films. The associated of chemical bonds were investigated using FTIR spectroscopy.
关键词： Semiconductor,Doping,CdS,PL,SEM,Bandgap
更新于2025-09-23 15:23:52
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Transport properties of doped zigzag graphene nanoribbons
摘要： Numerous studies on materials have driven the development of modern nanoelectronic devices. And research also shown that the integrated circuits have entered the era of the nanoelectronic scales from the scale of microelectronics. But the limitations of copper as a traditional connection, such as the resistivity increases a lot, further causing a lot of heat in the interconnect, have been highlighted. Therefore, we need new materials as the substitution of copper. The metallic properties exhibited by the zigzag graphene nanoribbons (ZGNRs) can be controlled by the edge states, doping and different widths of the nanoribbons. In this paper, we applied simulation to dope copper atom chains on ZGNRs. We found an energetic phenomenon that after doping the nanoribbons conductivity have increased significantly than the original. In addition, the transmission channels are mainly concentrated near the doping position, and the width used for transmission is greatly reduced after doping. It is expected to be used as an inter-connect application in nano-integrated circuits in the future.
关键词： Density functional theory,Interconnect,Electronic transport property,Non-equilibrium Green's function,Zigzag graphene nanoribbons,Doping
更新于2025-09-23 15:23:52
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Thermal analysis and crystal growth of doped Nb2O5
摘要： The systems Nb2O5–Ta2O5 and Nb2O5–V2O5 were investigated using thermal analysis, X-ray powder diffraction and thermodynamic simulations. Solid solution formation is possible for both systems; furthermore, both contain one intermediate compound, VNb9O25 or Ta2Nb4O15, respectively. Phase relationships for pure niobium(V)-oxide and tantalum(V)-oxide were studied under ambient pressure. It was found that both compounds can occur in two stable solid modifications. For niobium(V)-oxide this are the monoclinic high-temperature modification (H-Nb2O5) and an orthorhombic low-temperature modification (T-Nb2O5) and for tantalum(V)-oxide a tetragonal high-temperature form (α-Ta2O5) and an orthorhombic low-temperature form (β-Ta2O5). Based on these results, crystal growth experiments with various compositions from both systems were carried out using the optical floating zone (OZF) technique.
关键词： B2. dielectric materials,A2. growth from melt,A1. doping,A1. phase diagrams,B1. niobates
更新于2025-09-23 15:23:52
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Chemical bonds in nitrogen-doped amorphous InGaZnO thin film transistors
摘要： We investigated the chemical bonds in nitrogen-doped amorphous InGaZnO (a-IGZO:N) thin films with an X-ray photoelectron spectrometer (XPS). The doped nitrogen atoms preferentially combined with Ga cations and formed stable Ga-N bonds for low nitrogen-doping (N-doping), but additionally formed less stable In-N and Zn-N bonds for high N-doping. The stable Ga-N bonds and few defects made the variation in oxygen vacancy (VO) more difficult and hence achieved better stability of thin film transistors (TFTs) with low doped a-IGZO:N channel layers. Contrarily, the less stable In-N and Zn-N bonds as well as excess defects led to an easier change in VO and thus more unstable a-IGZO:N TFTs for high N-doping.
关键词： Amorphous InGaZnO (a-IGZO),Thin film transistors (TFTs),Nitrogen doping (N-doping),Chemical bonds
更新于2025-09-23 15:22:29
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Synthesis of broad yellow phosphors by co-doping and realization of high quality of white light
摘要： In order to obtain high quality white light, we synthesized yellow phosphors by doping europium and other lanthanoids such as holmium and lutetium. We successfully obtained yellow phosphors with green emissions with a wavelength of 510 nm for Li2SrSiO4 by co-doping europium and holmium. Unlike single doping of europium, a lower reduction temperature seemed to be preferable. When we simulated the chromaticity of white light at 5000 K, achieved by mixing blue light, which was used for excitation, and this phosphor, it resulted in better quality than commercially available products.
关键词： europium,sol-gel method,white light,Co-doping
更新于2025-09-23 15:22:29
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Hydrogen sensing characteristics of AlGaInP/InGaAs enhancement/depletion-mode co-integrated doping-channel field-effect transistors
摘要： In this article, the hydrogen sensing characteristics of Al0.25Ga0.25In0.5P/In0.1Ga0.9As enhancement/depletion-mode co-integrated pseudomorphic doping-channel field-effect transistors by wet selectively etching process are demonstrated. At drain current of 0.1 mA/mm, the threshold voltages are of (cid:1)0.97 (t0.6) V and (cid:1)1.22 (t0.31) V in air and at hydrogen concentration of 9800 ppm, respectively, for the depletion (enhancement)-mode device. In addition, by employing the co-integrated FETs the transfer characteristics of the direct-coupled FET logic (DCFL) obviously vary under hydrogen ambience. The VOH value reduces and the VOL value increases in the DCFL with the measurement of hydrogen detection.
关键词： Threshold voltage,Hydrogen sense,Doping-channel field-effect transistor,Enhancement/depletion-mode,AlGaInP/InGaAs,Direct-coupled FET logic
更新于2025-09-23 15:22:29
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Study of the photocatalysis and increase of antimicrobial properties of Fe3+and Pb2+ co-doped ZnO nanoparticles obtained by microwave-assisted hydrothermal method
摘要： The difficulty in treating organic effluents and increasing the resistance of microorganisms to conventional treatments promotes the development of new materials for these applications. In this work, it was obtained ZnO co-doped with Fe3+ and Pb2+ (ZnO:xFe:yPb, with x and y varying between 0, 1, 3 and 7 mol%) by microwave-assisted hydrothermal method with a reaction temperature of 140 °C for 30 min. The powders were characterized by X-ray diffraction (XRD), field-scanning electron microscopy (SEM), Brunauer-Emmett-Teller method (BET), ultraviolet diffuse reflectance spectroscopy (DRS-UV), X-ray fluorescence analysis (XRF) and Fourier transform infrared spectroscopy (FTIR). Photocatalytic properties were estimated by the degradation of the methylene blue dye when subjected to UV radiation. The antimicrobial properties were investigated by the formation of inhibition halos against E. coli and S. aureus bacteria. The XRD patterns show that there was no formation of secondary phases, obtaining only the ZnO phase, with hexagonal structure. Through the XRD, it can be seen that the intensity of the characteristic peaks is also reduced as the dopant concentration increases, indicating the appearance of defects in the crystalline lattice. SEM images show that an increase in the dopant concentration promotes a loss in the morphology of ZnO nanoparticles, accompanied by a reduction in their mean size. The co-doping reduces the photocatalytic activity of ZnO against the methylene blue dye, but increases the antimicrobial activity against E. coli and S. aureus bacteria.
关键词： Photocatalysis,ZnO,Antimicrobial activity,Co-doping
更新于2025-09-23 15:22:29
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Photocatalytic Overall Water Splitting on RuO <sub/>2</sub> -loaded Sm <sup>3+</sup> -doped CeO <sub/>2</sub> with Heterogenous Doping Structure
摘要： Photocatalytic overall water splitting into hydrogen and oxygen on RuO2-loaded Sm3+-doped CeO2 was examined. Pure CeO2 showed a negligible small activity, however Sm3+ doped CeO2 with heterogeneous doping structure synthesized by solid state reaction exhibited an efficient activity. Whereas, Sm3+-doped CeO2 with homogeneous doping structure showed little activity when prepared by co-precipitation method. In this study, relation between photocatalytic activity and surface doping structure was investigated.
关键词： Heterogeneous doping structure,Semiconductor photocatalyst,Overall water splitting
更新于2025-09-23 15:22:29