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Characterization of Cr/Ag metal thin films interaction with infra-red laser
摘要： Laser-metal interaction employed greater advantages to the performance of devices for electronics and optoelectronics devices. Silver (Ag) thin films were deposited onto silicon (Si) and glass substrates using direct current (DC) magnetron sputtering system. An under-layer, chromium (Cr) thin films that act as an adhesive layer were deposited on the glass substrate. Laser treatments on the samples were carried out at different laser energy under N2 ambient in a pressure cube. It is found that the electrical, optical and morphological properties improved after laser treatment process. Laser-treated Cr/Ag at 165 mJ shows a low electrical resistivity of 1.21 × 10-6 ?-cm. Optical reflectance and the transmittance increases from 1.675% and 1.636% to 7.256 % and 7.204 % respectively at 470 nm. Meanwhile, surface roughness has shown a value of 5 nm for the sample treated at a maximum laser energy.
关键词： silver,thin film,laser,DC magnetron sputtering,optoelectronic
更新于2025-09-12 10:27:22
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ZnO@TiO2 Core Shell Nanorod Arrays with Tailored Structural, Electrical, and Optical Properties for Photovoltaic Application
摘要： ZnO has prominent electron transport and optical properties, beneficial for photovoltaic application, but its surface is prone to the formation of defects. To overcome this problem, we deposited nanostructured TiO2 thin film on ZnO nanorods to form a stable shell. ZnO nanorods synthesized by wet-chemistry are single crystals. Three different procedures for deposition of TiO2 were applied. The influence of preparation methods and parameters on the structure, morphology, electrical and optical properties were studied. Nanostructured TiO2 shells show different morphologies dependent on deposition methods: (1) separated nanoparticles (by pulsed laser deposition (PLD) in Ar), (2) a layer with nonhomogeneous thickness (by PLD in vacuum or DC reactive magnetron sputtering), and (3) a homogenous thin layer along the nanorods (by chemical deposition). Based on the structural study, we chose the preparation parameters to obtain an anatase structure of the TiO2 shell. Impedance spectroscopy shows pure electron conductivity that was considerably better in all the ZnO@TiO2 than in bare ZnO nanorods or TiO2 layers. The best conductivity among the studied samples and the lowest activation energy was observed for the sample with a chemically deposited TiO2 shell. Higher transparency in the visible part of spectrum was achieved for the sample with a homogenous TiO2 layer along the nanorods, then in the samples with a layer of varying thickness.
关键词： TiO2 thin film,optical properties,ZnO nanorods,chemical deposition,DC reactive magnetron sputtering,pulsed laser deposition,electrical properties,core–shell
更新于2025-09-12 10:27:22
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Lossy Mode Resonance Generation on Sputtered Aluminum-Doped Zinc Oxide Thin Films Deposited on Multimode Optical Fiber Structures for Sensing Applications in the 1.55 μm Wavelength Range
摘要： In this work, we demonstrated lossy mode resonance (LMR) generation in optical fiber structures based on multimode fibers coated with aluminum-doped zinc oxide (AZO) films. AZO thin films were deposited by using radio frequency magnetron sputtering. In order to exhibit the usefulness of the LMR effect for sensing applications in optical fiber based systems, the deposition conditions of the AZO film coatings were set to obtain the second LMR order within the 1.55 μm wavelength range. An optical transmission configuration setup was used to investigate the LMR effect on fiber structures based on the use of no-core and cladding-removed multimode fibers coated with AZO films synthesized from metallic sputtering targets with different proportions of Zn:Al, 92:8% and 98:2%, at atomic concentrations. The optical and electrical/chemical features of the AZO films were characterized with UV–vis and XPS spectroscopy, respectively. The optical response of the proposed sensing configuration to refractive index (RI) variations was experimentally demonstrated. For the best approach, the sensitivity of wavelength displacement to RI variations on the liquid surrounding media was found to be 1214.7 nm/RIU.
关键词： multimode fiber,lossy mode resonance,optical fiber sensors,reactive RF magnetron sputtering,aluminum-doped zinc oxide
更新于2025-09-12 10:27:22
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Nitrogen-Doped Cu2O Thin Films for Photovoltaic Applications
摘要： Cuprous oxide (Cu2O) is a p-type semiconductor with high optical absorption and a direct bandgap of about 2.1 eV, making it an attractive material for photovoltaic applications. For a high-performance photovoltaic device, the formation of low-resistivity contacts on Cu2O thin films is a prerequisite, which can be achieved by, for instance, nitrogen doping of Cu2O in order to increase the carrier concentration. In this work, nitrogen-doped p-type Cu2O thin films were prepared on quartz substrates by magnetron sputter deposition. By adding N2 gas during the deposition process, a nitrogen concentration of up to 2.3 × 1021 atoms/cm3 in the Cu2O thin films was achieved, as determined from secondary ion mass spectroscopy measurements. The effect of nitrogen doping on the structural, optical, and electrical properties of the Cu2O thin films was investigated. X-ray diffraction measurements suggest a preservation of the Cu2O phase for the nitrogen doped thin films, whereas spectrophotometric measurements show that the optical properties were not significantly altered by incorporation of nitrogen into the Cu2O matrix. A significant conductivity enhancement was achieved for the nitrogen-doped Cu2O thin films, based on Hall effect measurements, i.e., the hole concentration was increased from 4 × 1015 to 3 × 1019 cm?3 and the resistivity was reduced from 190 to 1.9 ?·cm by adding nitrogen to the Cu2O thin films.
关键词： magnetron sputtering,thin film,nitrogen,cuprous oxide,doping
更新于2025-09-11 14:15:04
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The phase optimization, optical and electrical properties of kesterite Cu<sub>2</sub>ZnSnS<sub>4</sub> thin film prepared by single target RF magnetron sputtering technique for solar cell application.
摘要： Cu2ZnSnS4 (CZTS) thin film was prepared by RF sputtering technique from a single quaternary target by optimizing RF power, in-situ substrate temperature and post deposition annealing temperature. The single phase formation of crystalline CZTS thin film has been verified at a particular optimized condition by characterizing through X-ray diffraction, Raman selected area electron diffraction study. The surface properties such as particle size, shape and roughness and elemental composition of amorphous and crystalline phase of CZTS studied by atomic force microscope, scanning electron microscope and energy dispersive analysis of x-rays. The optical absorption and photoluminescence studies of post-deposition annealed film prove the defect free and single phase CZTS formation. The band gap calculation for crystalline CZTS showed band gap of 1.49eV calculated from the Tauc plot. The electrical properties of optimized CZTS thin film has been studied from Hall effect measurement showing P-type conductivity with better carrier concentration and Hall mobility.
关键词： Optical properties,Electrical properties,Phase optimization without post sulfurization process,Solar cell material,CZTS thin film,Single target RF magnetron sputtering
更新于2025-09-11 14:15:04
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Plasma source based on an unbalanced magnetron sputtering system
摘要： The paper presents research results on the capabilities of an unbalanced magnetron sputtering (UMS) system with a coefficient of geometrical unbalance KG=0.3 to produce gas discharge plasma far from its target. Using argon as the working gas and silicon as the target material, it is shown that the proposed UMS system provides the generation of plasma with an ion current density of ≈ 0.2 mA/cm2 in the region of treated material at 440 mm from the Si target. The research data on the maximum power at which the UMS system produces high-density plasma without melting the Si target are also presented.
关键词： unbalanced magnetron sputtering,plasma source,ion current density,silicon target
更新于2025-09-11 14:15:04
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On the influence of local oxygen addition on the growth of sputter deposited yttrium oxide thin films
摘要： Yttrium oxide thin films are grown by reactive magnetron sputtering. To achieve a high deposition rate, target poisoning is avoided by local oxygen addition at the substrate. In all deposited thin films only the monoclinic Y2O3 phase is observed. A strong variation in the film texture across the sample for experiments with a stationary sample stage is noticed. This inhomogeneity can be partially traced back to an uneven oxygen gas distribution. Sample rotation resolves this problem, but still the gas distribution influences both the texture and the Bragg peak positions. Several configurations for the gas supply are tested with a different number of gas distribution pipes. An overview of all experiments shows an interesting correlation between the texture coefficient and the peak position of the monoclinic (111) Bragg reflection. When the peak shifts towards higher diffraction angles, the texture coefficient drops as a higher contribution of the (402) orientation is observed. This trend however is further complicated by the exact geometrical configuration on the deposition rate, and the energy/momentum of the species arriving at the substrate. As previously reported, an increasing energy/momentum per deposited atom results in monoclinic thin films with a preferential (111) out-of-plane orientation.
关键词： Texture,Yttrium oxide,Magnetron sputtering,Gas distribution
更新于2025-09-11 14:15:04
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B-doping and annealing on the properties of B and Ga co-doped ZnO films
摘要： Transparent conducting boron (B) and gallium (Ga) co-doped ZnO (BGZO) films were deposited by radio frequency (RF) magnetron sputtering. The influence of B-doping and annealing treatment on properties of BGZO films was investigated. The results indicate that all samples have hexagonal wurtzite structure with (002) preferential orientation and the film crystallinity is improved with increasing annealing temperature. The hall mobility of films increase and the carrier concentration decrease with the increasing of annealing temperature. The films also show red shift of the optical bandgap with the increasing of annealing temperature. The incorporation of B increases the thermal stability of electrical properties of the BGZO film.
关键词： ZnO,annealing,magnetron sputtering,boron
更新于2025-09-11 14:15:04
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Photo-electrochemical stability of copper oxide photocathodes deposited by reactive high power impulse magnetron sputtering
摘要： Copper oxide thin films were deposited by a reactive high power impulse magnetron sputtering (r-HIPIMS) on glass substrates with a SnO2:F (FTO) layer. The pulse magnetron discharge was analyzed via the radio frequency (RF) Sobolewski probe, used for the time-resolved measurement of ion flux density on the substrate. Pulsed discharge current and voltage waveforms were analyzed. It was found that the pulse magnetron discharge worked in a self-sputtering mode with a stable or slightly growing discharge current after pulse discharge stabilization. As-deposited copper oxide films exhibited a certain degree of crystallinity, as identified by XRD, which was further improved after postdeposition annealing at 550 oC in the air. After annealing, the mixture of CuO and Cu2O crystallites was usually found in the films and in a few cases CuO0.96 phase was detected. Deposited films exhibited a p-type conductivity and relatively high photocurrents in the cathodic region after the postdeposition annealing. The highest photocurrent density of ip ≈ 1.1 mA cm-2 at potential -500 mV vs. Ag/AgCl was detected for films with a thickness of 1200 nm.
关键词： magnetron discharge,photocurrent,high power impulse magnetron sputtering,reactive sputtering,copper oxide,photocathode
更新于2025-09-10 09:29:36
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Characterization of Er-doped AlN films prepared by RF magnetron sputtering
摘要： Er-doped AlN thin film were deposited on sapphire substrates (0001) by RF magnetron sputtering at different sputtering times. The crystalline structure, surface morphology and electrical properties of the thin films have been investigated. The XRD patterns and the SEM sectional diagram indicate that Er-doped AlN thin films presents the preferred orientation of C axis. The crystalline quality of the films rises first and then decreases with the increase of sputtering time and reaches best at 90 minutes. Piezoelectric coefficient d33 indicates maximum value of 9.53pm/V. Correspondingly, the best surface morphology of thin film was obtained at 90 minutes and the surface roughness reached a minimum of 2.012 nm. In addition, the change of resistance is same with change of the crystalline quality and the resistivity reached a maximum of 4.36*1012Ω?cm at 90minutes.
关键词： piezoelectric properties,Er-doped AlN,crystal structure,resistivity,sputtering time,magnetron sputtering
更新于2025-09-10 09:29:36