- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
[IEEE 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - Madrid, Spain (2018.9.23-2018.9.25)] 2018 13th European Microwave Integrated Circuits Conference (EuMIC) - A Gain-Boosted 52–142 GHz Band-Pass Distributed Amplifier in O.13μm SiGe Process with f<inf>max</inf> of 210GHz
摘要： A band-pass gain-boosted distributed amplifier is proposed. The amplifier achieves a bandwidth of 90 GHz at center frequency of 97 GHz and operates up to frequencies as high as 0.67fmax of the transistors. A novel gain-boosted cascode structure as well as band-pass transmission lines are employed to significantly boost the bandwidth and the highest operation frequency of the amplifier. The amplifier shows an average gain of 14.4 dB from 52 GHz to 142 GHz in a 0.13-μm SiGe process with fmax of 210 GHz.
关键词： bandpass amplifiers,gain boosting,distributed amplifiers,millimeter-wave silicon RFICs,maximum oscillation frequency (fmax),SiGe
更新于2025-09-04 15:30:14
-
Analysis of Passivation Techniques in InP HEMTs and Implementation of an Analytical Model of <i>f</i> <sub/>T</sub> Based on the Small Signal Equivalent Circuit
摘要： This paper analyses, the influence of Si3N4-PECVD and Al2O3-ALD surface passivation on the DC and RF characteristics of InP HEMTs with different gate lengths 0.08 μm, 0.1 μm, 0.12 μm, and 0.15 μm. A significant improvement in maximum drain current IDS_MAX, transconductance gm_MAX and oscillation frequency fmax_MAX is obtained by scaling the thickness of the passivation layers An increase in gm_MAX and fmax_MAX, fT_MAX is observed by reducing parasitic capacitance w.r.t. the decrease in gate length. In addition, an analytical model of fT based on a small-signal equivalent circuit is developed, which consist of extrinsic parameters Rs, Rd, Cgs_ext and Cgd_ext and intrinsic parameters Cgsi, Cgdi, gmi and goi. The carrier transport is improved by increasing gmi, thus the transit time τt, the parasitic charging delay τext and the τpar are reduced by lowering the extrinsic capacitances. An excellent fitting between measured and simulated fT is achieved, which inturn leads a realistic way for further improvement in fT.
关键词： Passivation,Maximum Oscillation Frequency,Transconductance,Fabrication
更新于2025-09-04 15:30:14