研究目的
To analyze the influence of Si3N4-PECVD and Al2O3-ALD surface passivation on the DC and RF characteristics of InP HEMTs with different gate lengths and to develop an analytical model of fT based on the small-signal equivalent circuit.
研究成果
The study demonstrates significant improvement in DC and RF characteristics of InP HEMTs using Si3N4-PECVD and Al2O3-ALD passivation techniques. An analytical model of fT based on the small-signal equivalent circuit is developed, showing excellent agreement between measured and simulated values. Both techniques show potential applicability for high performance and low power applications.
研究不足
The study is limited to the analysis of Si3N4-PECVD and Al2O3-ALD passivation techniques on InP HEMTs with specific gate lengths. The impact of other passivation techniques or materials is not explored.
1：Experimental Design and Method Selection:
The study involves the fabrication of T-gate InAlAs/InGaAs InP-based HEMTs with gate lengths 0.08 μm, 0.1 μm, 0.12 μm, and 0.15 μm. The influence of PECVD-Si3N4 and ALD-Al2O3 passivation techniques on their DC and RF characteristics is analyzed.
2：08 μm, 1 μm, 12 μm, and 15 μm. The influence of PECVD-Si3N4 and ALD-Al2O3 passivation techniques on their DC and RF characteristics is analyzed.
Sample Selection and Data Sources:
2. Sample Selection and Data Sources: HEMTs with different gate lengths are selected from each group to demonstrate the improvement in DC and RF characteristics. Hall measurements are made at room temperature.
3：List of Experimental Equipment and Materials:
A commercial PECVD (Plasma-Therm 790+) is used for Si3N4 deposition, and ALD (Beneq TFS200) is used for Al2O3 deposition. HP4142 semiconductor parameter analyzer and Agilent E8363B PNA vector network analyzer are used for DC and RF characteristics measurement.
4：Experimental Procedures and Operational Workflow:
The fabrication process includes gate lithography, recess, and metallization. Electron beam lithography is used to define a T-shaped gate. Phosphorus acid/hydrogen peroxide wet etching is used to form the gate recess. A Ti/Pt/Au T-shaped gate metal is evaporated and lifted off.
5：Data Analysis Methods:
The S-parameters are extracted and studied after measurement. The values of fT and fmax are obtained by extrapolation of H21 and MAG/MSG with a slope of ?20 dB/decade.
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