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Mid-Wavelength Infrared Responsivity of Colloidal Quantum Dot/Organic Hybrid Photodetectors
摘要： Colloidal quantum dot/organic hybrid materials approach offer a path toward engineering solution-processed photodetectors with extended spectral responsivity in the infrared. We demonstrate this approach in the technologically important thermal infrared region of mid-wavelength infrared, utilizing a solution blend of Ag2Se colloidal quantum dots and [6,6]-phenyl-C61-butyric acid methyl ester (PCBM). We report on the device fabrication and their room temperature optical, electrical, and optoelectronic properties. At room temperature, a responsivity of 0.2 mA/W was measured under 5 μm irradiation and 5 V bias. The new hybrid optoelectronic film demonstrated the advantage of cost-effectiveness and greater fabrication versatility than the single crystal or epitaxial semiconductors that comprise today’s infrared technologies.
关键词： Colloidal quantum dots,Photodetectors,Mid-wavelength infrared,Organic hybrid,Responsivity
更新于2025-09-23 15:21:01
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High performance Zn-diffused planar mid-wavelength infrared type-II InAs/InAs <sub/>1a??x</sub> Sb <sub/>x</sub> superlattice photodetector by MOCVD
摘要： We report a Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1?xSbx superlattices. Both the superlattice growth and Zn diffusion were performed in a metal-organic chemical vapor deposition system. At 77 K, the photodetector exhibits a peak responsivity of 0.70 A/W at 3.65 μm, corresponding to a quantum efficiency of 24% at zero bias without anti-reflection coating, with a 50% cutoff wavelength of 4.28 μm. With an R0A value of 3.2 × 105 Ω cm2 and a dark current density of 9.6 × 10?8 A/cm2 under an applied bias of ?20 mV at 77 K, the photodetector exhibits a specific detectivity of 2.9 × 1012 cm Hz1/2/W. At 150 K, the photodetector exhibits a dark current density of 9.1 × 10?6 A/cm2 and a quantum efficiency of 25%, resulting in a detectivity of 3.4 × 1011 cm Hz1/2/W.
关键词： specific detectivity,metal-organic chemical vapor deposition,type-II InAs/InAs1?xSbx superlattices,quantum efficiency,Zn-diffused planar mid-wavelength infrared photodetector
更新于2025-09-23 15:19:57