研究目的
To develop a high-performance Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1?xSbx superlattices using metal-organic chemical vapor deposition.
研究成果
The Zn-diffused planar mid-wavelength infrared photodetector based on type-II InAs/InAs1?xSbx superlattices demonstrated high performance with a peak responsivity of 0.70 A/W at 3.65 μm and a quantum efficiency of 24% at 77 K. The device also showed a specific detectivity of 2.9 × 1012 cm Hz1/2/W at 77 K and 3.4 × 1011 cm Hz1/2/W at 150 K, indicating its potential for mid-wavelength infrared detection applications.
研究不足
The study does not address the long-term stability and reliability of the photodetector under various environmental conditions. Additionally, the performance at temperatures above 150 K is not extensively explored.
1：Experimental Design and Method Selection:
The study involved the growth of type-II InAs/InAs1?xSbx superlattices and Zn diffusion in a metal-organic chemical vapor deposition (MOCVD) system.
2：Sample Selection and Data Sources:
The superlattice was grown on a Te-doped n-type GaSb substrate.
3：List of Experimental Equipment and Materials:
MOCVD system, diethylzinc (DEZn) as the Zn source, AsH3 as an As source, hydrogen as the carrier gas.
4：Experimental Procedures and Operational Workflow:
The diffusion process was performed at 430°C with a reactor pressure of 60 Torr. The diffusion window was opened using CF4:Ar+ plasma in an electron cyclotron resonance-reactive ion etching system.
5：Data Analysis Methods:
Secondary ion mass spectrometry (SIMS) was used to determine the Zn concentration and diffusion front. Circular transmission line model (CTLM) measurements were performed to investigate the resistivity of the Ti/Au Ohmic contact.
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