[IEEE 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Kyoto, Japan (2018.7.9-2018.7.13)] 2018 31st International Vacuum Nanoelectronics Conference (IVNC) - Structural characterization and emission properties of phosphorus-doped NCD films

摘要： Phosphorus-doped NCD films were grown on n-type silicon substrate by plasma-enhanced CVD with H2, CH4, and PH3 gas mixture for cold cathode application. The structure properties were characterized by Raman spectroscopy with a green laser of 532 nm at room temperature, scanning electron microscope, transmission electron microscope, and electron energy-less spectroscopy. Grown films show a good conductivity and have a typical structure with a combination of sp3 diamond gains with size around 20-100 nm and sp2 grain boundaries. The electron emission properties were characterized as comparing with single crystal, NCD film, and tip-array NCD. The tip-array NCD shows good emission properties with lower threshold electric filed and higher saturation current.