研究目的
To discuss detailed aspects of CVD growth, structural characterization, and electron emission properties of phosphorus-doped NCD films.
研究成果
Phosphorus-doped NCD films show good conductivity and electron emission properties, with the tip-array NCD demonstrating lower threshold electric field and higher saturation current. The structural characterization confirms the typical NCD structure with a combination of sp3 diamond grains and sp2 grain boundaries.
研究不足
The study focuses on phosphorus-doped NCD films and their electron emission properties, but does not explore other doping materials or their effects on the film properties. The long-term stability and performance under various environmental conditions are not discussed.
1：Experimental Design and Method Selection:
NCD films were grown by plasma-enhanced chemical vapor deposition (PECVD) with
2：45 GHz microwave using hydrogen and methane mixtures, and phosphine gas for phosphorus doping. Sample Selection and Data Sources:
The substrate is n-type silicon substrate with high conductivity of
3：02 Ωcm. List of Experimental Equipment and Materials:
Secondary ion mass spectrometry (SIMS), scanning electron microscope (SEM), atomic force microscope (AFM), Raman spectroscopy with green laser of 532 nm, cross-sectional transmission electron microscope, electron energy loss spectroscopy.
4：Experimental Procedures and Operational Workflow:
Before CVD growth, each substrate was treated by nano-diamond colloidal solution with sonic wave, followed by rinse process with deionized water, and then installed into CVD reactor. The field emission (FE) properties were measured in ultra-high vacuum condition of 1×10-8 Torr at room temperature.
5：Data Analysis Methods:
The impurity depth profile was measured by SIMS with ion-implanted standard sample. The structural characterizations were done by SEM, AFM, Raman spectroscopy, cross-sectional transmission electron microscope, electron energy loss spectroscopy.
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