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Reference Module in Materials Science and Materials Engineering || Organometallic Vapor Phase Epitaxial Growth of Group III Nitrides ☆
摘要： The III-nitrides of aluminum nitride (AlN), gallium nitride (GaN), and indium nitride (InN) and their solid solutions form most commonly in the low-temperature wurtzite crystal structure shown in Fig. 1(a). Overall, this structure possesses a hexagonal unit cell with lattice constants c (o00014 axes) and a (o11204 axes). The atomic arrangement within this structure consists of two interpenetrating, closest packed metal and nitrogen lattices in which each atom of one type is bonded to four atoms of the other to form AB4 tetrahedra. The space group is P63mc.
关键词： GaN,OMVPE,Organometallic Vapor Phase Epitaxy,Group III Nitrides,Polarization,Dislocations,InN,Buffer Layers,AlN,Substrates
更新于2025-09-23 15:21:01
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Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates
摘要： Controlled growth of InGaN quantum dots (QDs) using photoelectrochemically (PEC) etched InGaN QD templates is demonstrated. The InGaN QDs are grown by a self-assembly (SA) method using metal-organic chemical vapor deposition on templates consisting of planar GaN and PEC etched InGaN QDs for comparison. The InGaN QD templates are formed using quantum-size-controlled PEC etching of planar InGaN layers on GaN, which produces controlled QD radiuses with a statistical mean (μ) of 17.3 nm and standard deviation (σ) of 6.2 nm, and densities of 1.2 × 1010 cm?2. The PEC etched QDs are capped with an AlGaN interlayer and GaN barrier layer to recover a planar surface morphology for subsequent SA growth of QDs. The PEC QD templates behave as seeds via localize strain near the PEC QDs which provide improved control of the SA QD growth. The SA grown QDs on PEC QD templates are smaller and have controlled radiuses with μ = 21.7 nm and σ = 11.7 nm compared to the SA QDs on planar GaN templates with radiuses of μ = 37.8 nm and σ = 17.8 nm. Additionally, the dot densities of the SA QDs on PEC QD templates are ~3 times higher and more closely match the underlying densities of the template (8.1 × 109 cm?2). Multiple quantum dots (MQDs) are also grown on both templates that consist of 4 periods of SA QDs and AlGaN/GaN interlayer/barrier layers. The MQDs grown on PEC QD templates better retain their planarized smooth surfaces after barrier layer growth, and exhibit ~3 times stronger PL intensity at room temperature compared to MQDs grown on planar GaN.
关键词： Metalorganic chemical vapor deposition,Nitrides,Quantum dots,Light emitting diodes,Atomic force microscopy,Photoelectrochemical etching
更新于2025-09-23 15:21:01
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III-Nitride Short Period Superlattices for Deep UV Light Emitters
摘要： III-Nitride short period superlattices (SPSLs), whose period does not exceed ~2 nm (~8 monolayers), have a few unique properties allowing engineering of light-emitting devices emitting in deep UV range of wavelengths with significant reduction of dislocation density in the active layer. Such SPSLs can be grown using both molecular beam epitaxy and metal organic chemical vapor deposition approaches. Of the two growth methods, the former is discussed in more detail in this review. The electrical and optical properties of such SPSLs, as well as the design and fabrication of deep UV light-emitting devices based on these materials, are described and discussed.
关键词： III-nitrides,light emitters,short period superlattices
更新于2025-09-23 15:21:01
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Epitaxial lateral overgrowth of GaN on nano-cavity patterned sapphire substrates
摘要： The epitaxial lateral overgrowth of GaN by metal-organic chemical vapor deposition using a nano-cavity patterned sapphire substrate (NCPSS) was investigated. The NCPSS, with a hexagonal non-close-packed nano-cavity pattern on the sapphire substrate, was fabricated by polystyrene sphere coating and size reduction by reactive ion etching, followed by deposition of alumina and thermal oxidation. The coalescence of GaN on the NCPSS was achieved by the formation of relatively large GaN islands and enhanced lateral overgrowth of the GaN islands over several nano-cavity pattern areas. The threading dislocation density (TDD) measured by cathodoluminescence measurement was significantly reduced from 2.4 108 cm-2 to 6.9 107 cm-2 by using the NCPSS. Dislocation behaviors that contribute to the reduction of TDD of the GaN layer were observed by transmission electron microscopy. Raman spectroscopy revealed that the compressive stress in the GaN layer was reduced by 21% due to the embedded nano-cavities. In addition, the diffuse reflectance of GaN on the NCPSS was enhanced by 54% ~ 62%, which is attributed to the increased probability of light extraction through effective light scattering by nano-cavities.
关键词： A1. Nanostructures,B1. Nitrides,A2. Single crystal growth,A3. Metalorganic chemical vapor deposition,A3. Nanoscale epitaxial lateral overgrowth
更新于2025-09-23 15:21:01
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MOVPE growth of n-GaN cap layer on GaInN/GaN multi-quantum shell LEDs
摘要： Embedded growth of an n-GaN cap layer on multi-quantum shells (MQSs) and nanowires through a tunnel junction (TJ) was investigated for the improvement of current injection to the m-plane of the MQSs. Different growth conditions for an n-GaN cap layer were systematically studied to suppress Mg diffusion and void formation, which are serious problems in this structure. At a high temperature of 900 °C and above, the growth rate on a semi-polar r-plane decreased, and large voids were formed at the bottom part of the nanowires owing to the diffusion of Ga atoms from the r-plane to the m-plane. When the growth temperature decreased to 800 °C, the growth rate on both the m-plane and the r-plane increased, and the size of voids decreased. Simultaneously, Mg diffusion also disappeared because of the low growth temperature of 800 °C. It was found that the growth with an extremely low V/III ratio of 20 at low temperatures increases the lateral growth rate on the m-plane, and void formation is fully suppressed when the MQS height is 700 nm or less.
关键词： B1. Nitrides,A1. Nanostructures,B3. Laser diodes,A3. Metalorganic vapor phase epitaxy
更新于2025-09-23 15:19:57
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The effect of preliminary heat treatment on the durability of reaction bonded silicon nitride crucibles for solar cells applications
摘要： Silicon nitride crucibles have the potential to replace silica crucibles and reduce the cost of silicon crystallization because of their reusability potential. Till date, crucibles’ heat treatment before each use is a prerequisite to achieve non-wetting conditions that is needed to facilitate the ingot release and hence enable reusability. Yet, no studies have examined the heat treatment influence on the crucibles’ durability. The present investigation focuses on the crucibles’ heat treatment and its impact on the crucibles’ lifetime. Repeated heat-treatments of silicon nitride crucibles in the air at above 1100 °C leads to crucible fracture. Therefore, this study identifies the cause and the mechanism of such failures by applying different heat treatment procedures in the air. The mass gain and the oxidation rates of the crucibles at different temperatures are measured via Thermogravimetry (TG) and Differential Thermal Analyzer (DTA). The results show that the porosity and phase distribution along the crucible wall thickness, play a key role in the crucible’s behavior during oxidation. Moreover, excessive internal oxidation in the tested crucibles results in severe thermal stresses which cause cracking during cooling.
关键词： B1. Nitrides,A1. Heat treatment,A1. Crucible cracking,A1. Characterization
更新于2025-09-23 15:19:57
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Overview of Synthetic Methods to Prepare Plasmonic Transition Metal Nitride Nanoparticles
摘要： The search for new plasmonic materials that are low-cost, chemically and thermally stable, and exhibit low optical losses has garnered significant attention among researchers. Recently, metal nitrides have emerged as promising alternatives to conventional, noble metal based plasmonic materials such as Ag and Au. Many of the initial studies on metal nitrides have focused on computational prediction of the material plasmonic properties. In recent years, several synthetic methods have been developed, enabling empirical analysis. This review highlights synthetic techniques for the preparation of plasmonic metal nitride nanoparticles which are predominantly free-standing using solid-state and solid-gas phase reactions, non-thermal and arc plasma methods, and laser ablation. The physical properties of the nanoparticles such as shape, size, crystallinity, and optical response obtained with such synthetic methods are also summarized.
关键词： Plasmonics,nanoparticles,next-generation materials,transition metal nitrides,metamaterials
更新于2025-09-23 15:19:57
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Transparent Ta3N5 Photoanodes for Efficient Oxygen Evolution toward the Development of Tandem Cells
摘要： Photoelectrochemical water splitting is regarded as a promising approach to the production of hydrogen, and the development of efficient photoelectrodes is one aspect of realizing practical systems. In this work, transparent Ta3N5 photoanodes were fabricated on n-type GaN/sapphire substrates to promote O2 evolution in tandem with a photocathode, to realize overall water splitting. Following the incorporation of an underlying GaN layer, a photocurrent of 6.3 mA cm-2 was achieved at 1.23 V vs. a reversible hydrogen electrode. The transparency of Ta3N5 to wavelengths longer than 600 nm allowed incoming solar light to be transmitted to a CuInSe2 (CIS), which absorbs up to 1100 nm. A stand-alone tandem cell with a serially-connected dual-CIS unit terminated with a Pt/Ni electrode was thus constructed for H2 evolution. This tandem cell exhibited a solar-to-hydrogen energy conversion efficiency greater than 7% at the initial stage of the reaction.
关键词： (oxy)nitrides,photoelectrochemistry,water splitting,photoelectrochemical tandem cell,solar energy conversion
更新于2025-09-23 15:19:57
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Structural disorder and in-gap states of Mg-implanted GaN films evaluated by photothermal deflection spectroscopy
摘要： Both structure of the valence band maximum (VBM) and deep-level defects for box-pro?le Mg-ion implanted (4 × 10^19 cm^-3) GaN samples are characterized by photothermal de?ection spectroscopy (PDS). Compared with the results evaluated by positron annihilation spectroscopy, the variations caused by the thermal annealing is discussed with respect to Urbach energy, defect levels in the band gap, and photoluminescence. Forming Urbach tail gradually at the VBM at the 1000 °C annealing, vacancy-type defects clusters without drastic decrease of deep-level defects. Green and yellow luminescence emits slightly as the PDS signal at the deep-level is decreased by the annealing at 1100 °C due to the decrease of non-radiative recombination centers. The Urbach energy is improved by the further annealing so that the luminescence becomes intense due to the energy transfer through the phonon from Urbach region. The shift of Fermi level towards the valence band at the 1300 °C annealing, the sign of p-conduction, is con?rmed from the valence band spectra. Compared to the Mg-doped GaN with p-conduction, it is considered that the improvement of Urbach energy is crucial for p-type activation.
关键词： B1. Gallium compounds,B1. Nitrides,A1. Defects
更新于2025-09-19 17:15:36
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Influence of trimethylaluminum predoses on the growth morphology, film-substrate interface, and microstructure of MOCVD-grown AlN on (111)Si
摘要： Aluminum nitride (AlN) was deposited on (111) silicon by metalorganic chemical vapor deposition after varied trimethylaluminum predoses. Growth morphologies, film-substrate interfaces, and film microstructures were examined using scanning electron microscopy, atomic force microscopy, X-ray diffraction, and transmission electron microscopy. In samples grown with predoses, lateral growth was observed over faceted "patches" formed during the predose. Three-dimensional growth was observed to seed from small islands on the surface of these patches and eventually overgrow them. The three-dimensional growth mode was similar to that observed when AlN was grown without a predose, resulting in similar morphologies in all films, regardless of predose, after the islands coalesced. The AlN-silicon interface was found to be predominantly amorphous when no predose was used. However, narrow regions were observed over which the film was in atomic registry with the substrate. This indicates AlN nucleates in epitaxy with the substrate and amorphous silicon nitride forms between nucleation sites due to ammonia exposure. Films grown with predoses had structurally abrupt interfaces, suggesting aluminum within the observed patch features inhibits the reaction between ammonia and silicon at the onset of growth. A structure distinct from both wurtzite AlN and diamond cubic silicon was observed at the substrate interface in films grown with a predose, consistent with either zinc blende AlN or a strained Si/Al alloy. A mosaic microstructure was observed in all films, grown with or without predoses, which consisted of sub-boundaries formed by clusters of threading dislocations. Threading dislocations, separated by hundreds of nanometers, were found to be tilted along common directions, providing evidence for a dislocation bending mechanism possibly enhanced by the predose.
关键词： Defects,Crystal morphology,Metalorganic chemical vapor deposition,Semiconducting aluminum compounds,Nucleation,Nitrides
更新于2025-09-19 17:15:36