- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Multi-channel silicon photonic receiver based on compact second-order microring resonators
摘要: A monolithically integrated multi-channel receiver fabricated on the Silicon-on-Insulator (SOI) platform is demonstrated experimentally. This receiver is composed of an eight-channel thermally tunable microring resonator (MRR) filter as the wavelength division multiplexing (WDM) demultiplexer and an array of high speed waveguide-integrated Ge-on-Si photodetectors (PDs) for light detection. Second-order MRRs were utilized in each channel to obtain steeper roll-off from passband to stopband and lower crosstalk. The receiver was fabricated by using CMOS-compatible fabrication process at IME A*STAR. With the thermal tunability, the channel spacing can be adjusted according to different channel grid. Lower than ?30 dB crosstalk and higher than 50 GHz 3-dB bandwidth was obtained for the demultiplexer with a channel spacing of 150 GHz. Proof-of-principle demonstration shows that each channel is capable of operating at a data rate of 10 Gb/s, resulting in an aggregate data rate of 80 Gb/s.
关键词: Silicon photonics,Wavelength division multiplexing,Optical receivers,Microring resonators,Optical interconnects
更新于2025-09-23 15:23:52
-
Aberrated Microlenses to Reduce Crosstalk in Free Space Optical Interconnects Systems
摘要: A free space optical interconnects system that uses Gaussian beams and focusing microlenses with spherical aberration has been considered. Numerical results show that the use of microlenses with negative spherical improves the signal-to-crosstalk ratio of the interconnects system at some optimum positions of the detector array. An expression for output field at the detectors plane is derived and used to evaluate the signal-to-crosstalk ratio.
关键词: lens spherical aberration,optical crosstalk,free space optical interconnects
更新于2025-09-23 15:23:52
-
[IEEE 2018 IEEE Photonics Conference (IPC) - Reston, VA (2018.9.30-2018.10.4)] 2018 IEEE Photonics Conference (IPC) - 40Gb/s Carrier Depletion-Based Silicon Micro-Ring Modulators
摘要: A high-speed silicon microring modulator based on a titanium-doped silicon rib waveguide has been demonstrated. Small footprint of 26.5 μm × 26.5 μm with low driving voltage of 1.5 V and 22 dB extinction ratio at 20 Gb/s modulation has been achieved. The high-speed performance is attributed to the low capacitance of the device and the efficient plasma dispersion effect in silicon. Moreover, the modulator exhibits a low propagation loss of 2.5 dB/cm and a high modulation efficiency of 1.5 V·cm. The device is fabricated on a silicon-on-insulator (SOI) wafer with a 220 nm top silicon layer and a 2 μm buried oxide layer. The rib waveguide has a width of 500 nm and a height of 220 nm with a slab height of 150 nm. The titanium doping concentration is 1×10^20 cm^{-3}. The modulator is characterized using a lightwave component analyzer and a high-speed photodetector. The 3-dB bandwidth is measured to be 20 GHz. The eye diagrams at 20 Gb/s show clear eye opening with low jitter. The results indicate that the titanium-doped silicon microring modulator is promising for high-speed optical interconnects.
关键词: high-speed modulation,titanium doping,optical interconnects,silicon photonics,microring modulator
更新于2025-09-23 15:23:52
-
Dual Parallel Multi-electrode Traveling Wave Mach-Zehnder Modulator for 200 Gb/s Intra-datacenter Optical Interconnects
摘要: We present a silicon photonic dual parallel multi-electrode Mach-Zehnder modulator (MEMZM) based transmitter targeting 200 Gb/s 4-level pulse amplitude modulation (PAM4) short reach transceivers. The MEMZMs have an average Vπ and electro-optic (EO) bandwidth of 5 V and 38 GHz, respectively. The transmitter is characterized versus receiver equalizer taps, received signal power, driving voltage swing, crosstalk voltage swing, bitrate, and reach. Results reveal that using only a 3-tap equalizer at the receiver, 100 Gb/s PAM4 net rate per lane can be achieved at a bit error rate (BER) below the KP4 forward error correction (KP4-FEC) threshold of 2.4 × 10?4. Moreover, up to 128 Gb/s can be received at a BER below the KP4-FEC threshold using only 2 Vpp and 1 Vpp driving the MEMZM segments. Then, both MEMZMs are driven simultaneously to assess the crosstalk impact on the BER performance at parallel operation. Driven by four binary signals, we demonstrate 200 Gb/s PAM4 transmission over up to 10 km of single mode fiber at a BER below the KP4-FEC threshold.
关键词: Optical interconnects,Fiber optics systems,silicon nanophotonics,Electro-optical systems
更新于2025-09-23 15:22:29
-
On the Complexity Reduction of the 2nd-order Volterra Nonlinear Equalizer for IM/DD systems
摘要: To cope with the various nonlinear signal distortions in IM/DD transmission systems, a theoretical analysis on the Volterra nonlinear equalizer (VNLE) is provided, focusing on computational complexity aspects. The analysis yields a simple reduced-complexity scheme for the 2nd-order VNLE (R2-VNLE) based on a performance-complexity trade-off. An experimental verification is performed with single-sideband 28-GBaud PAM-4 electro-absorption modulated signals, generated by a distributed-feedback laser, over transmission distances of up to 80-km of standard single-mode fiber in the C-band. A comparison of the results for different equalization schemes, including a signal-signal beat interference mitigation technique, shows superior performance for the R2-VNLE.
关键词: PAM-4,Volterra filter,direct detection,Nonlinear equalization,optical interconnects,intensity modulation
更新于2025-09-23 15:22:29
-
Nanoscale Light Sources for Optical Interconnects
摘要: This editorial is aimed at addressing two key aspects of nanoscale light sources: (1) low-power optical communication and (2) crystallographic defect engineering for monolithic integration with silicon. We will further discuss opportunities and challenges for nanoscale light sources for next generation, high density optical interconnect. Designing and prototyping light sources with sub light wavelength dimensions has been the topic of keen interest because of their versatility in optical communication. For example, nano light sources can operate at hundreds of GHz [1,2] which is not possible with conventional light sources [3]. In addition, power consumption in interconnects with these light sources can be reduced by omitting the modulator and using direct source modulation to encode optical data [4]. There are a number of nano light sources under investigation: (i) small photonic mode laser [5-9], (ii) plasmonic lasers [10,11] (iii) photonic-plasmonic hybrid lasers [12-15] and (iv) nanoscale LEDs [16,17]. Pros and cons of these nano light sources are discussed below.
关键词: crystallographic defect engineering,optical interconnects,low-power optical communication,Nanoscale light sources,monolithic integration
更新于2025-09-23 15:21:01
-
Laser polymerized photonic wire bonds approach 1a??Tbit/s data rates
摘要: Microelectronics has solved the challenge of packaging different functional elements with integrated chips (ICs) in modern computing and communication by wire bonding. Miniaturization was a trend guided by the requirements for faster, more portable and less expensive (smaller amount of materials) solutions, where wire bonding evolved to accommodate increasingly more complex 3D architectures of chips and printed circuit boards. Even faster and more robust computing and communication can be provided by using photons rather than electrons. This was one of the underlying reasons for the fast growth of optical fiber communication, which is especially efficient over large ~1000 km distances. Data transfer in microelectronics also increasingly benefits from optical interconnects, which, however, have scaling challenges at small IC dimensions. The overall trend of optical fibers prevailing over copper wire for long-distance data transfer follows the miniaturization trend, and now, a new capability has been demonstrated on the microscale. Photonic wire bonding solves the same problem as wire bonding in microelectronics, but for optical communication on the level of chip-to-chip interconnects. In a recent study, a new milestone for data transfer over a 75 km channel at a rate of ~0.8 Tbit/s was demonstrated for Si photonic transmitters co-packaged with 1.5 μm InGaAsP lasers using photonic wire bonding. Several breakthroughs were combined to achieve the record high speed of data transfer. Optical insertion losses of only 0.7 dB were demonstrated. In addition, the required photonic wire tapering for single mode fiber operation/filtering was seamlessly achieved by direct laser writing. Most importantly, photonic wire bonding solves the stringent requirements for optical alignment between components and opens the possibility for automated packaging solutions. Si photonic platforms based on well-established complementary metal-oxide-semiconductor technologies can now be combined with other light sources and nonlinear optical components based on other platforms using photonic wire bonding. This makes hybrid photonic chip modules possible. It can be seen as a manifestation of the evolving trend in modern technology where complexity develops along with miniaturization, which has been the guiding principle established in previous decades of microelectronics.
关键词: optical communication,direct laser writing,miniaturization,photonic wire bonding,optical interconnects
更新于2025-09-23 15:21:01
-
Experimental demonstration of an ultra-low latency control plane for optical packet switching in data center networks
摘要: Optical interconnection networks have the potential to reduce latency and power consumption while increasing the bisection bandwidth of data center networks compared to electrical network architectures. Optical circuit-switched networking has been proposed but it is reconfigurable in milliseconds. Although switches operating on nanosecond timescales have been demonstrated, centrally scheduling such switching architectures is considered to be of high complexity, incurring significant delay penalties on the total switching latency. In this paper we present a high-speed control plane design based on a central switch scheduler for nanosecond optical switching which significantly reduces the end-to-end latency in the network compared to using the best electronic switches. We discuss the implementation of our control plane on field-programmable gate array (FPGA) boards and quantify its delay components. We focus on the output-port allocation circuit design which limits the scheduling delay and the end-to-end latency. Using our FPGA-implemented control plane, for a 32 × 32 switch, we experimentally demonstrate rack-scale optical packet switching with a minimum end-to-end head-to-tail latency of 71.0 ns, outperforming current state-of-the-art electronic switches. The effect of asynchronous control plane operation on the switch performance is evaluated experimentally. Finally, a new parallel allocation circuit design is presented decreasing the scheduling delay by 42.7% and the minimum end-to-end latency to 54.6 ns. More importantly, it enables scaling to a switch double the size (64 × 64) with a minimum end-to-end latency less than 71.0 ns. In a developed cycle-accurate network emulator we demonstrate nanosecond switching up to 60% of port capacity and average end-to-end latency less than 10 μs at full capacity while maintaining zero packet loss across all traffic loads.
关键词: Optical interconnects,Optical crossbar switch scheduling,Physical-layer control plane design,Optical packet switching
更新于2025-09-19 17:15:36
-
[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Low-Cost Fabrication of Polymer Based Micro-Optical Devices for Application in Illumination, Sensing, and Optical Interconnects
摘要: Fabrication of desired micro structures in polymers is always of keen interest for applications in illumination optics, sensors and optical interconnects. The challenge is to fabricate structures in the sub-micron range but at low cost. Among other fabrication methods as described in [1], maskless lithography tends to be cost effective and can create sub-micron structures. Here, we present a simple and low-cost fabrication process chain for fabricating desired micro structures in polymer, i.e. PMMA. The microstructures are, for example, grating structures and straight waveguides. The fabrication is done using a maskless lithography setup which employs a spatial light modulator and a UV LED. For recording the microstructure pattern a grayscale photoresist, i.e. OrmoComp, is used, which is coated on the silicon substrate. For writing waveguides, a translation stage is included in the setup to stitch the single exposure patterns together to form a continuous waveguide structure, as can be seen in Fig. 1(c). For replication an intermediate stamp, which is stable at high thermal loads, is obtained by casting Polydimethyl siloxane (PDMS) in an oven for 15 mins at 100 0C. The stamp is then used to replicate the microstructures onto the Polymethyl methacrylate (PMMA) using a hot embossing system, i.e. Jenoptik HEX03. A 500 μm thick PMMA (Plexiglas XT99524, Thyssen Krupp) foil is placed on the PDMS (ELASTOSIL RT 607A/B) stamp and an embossing pressure of 7 kPa is applied for 4 mins. After cooling to a release temperature of 40 0C, the PMMA foil is removed manually.
关键词: micro-optical devices,PDMS,optical interconnects,illumination,polymer,sensing,maskless lithography,PMMA,hot embossing
更新于2025-09-19 17:13:59
-
[IEEE 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Munich, Germany (2019.6.23-2019.6.27)] 2019 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC) - Swift-Hohenberg Equation with Third Order Dispersion for Optical Resonators
摘要: A source-synchronous interconnect using mode-division multiplexing (MDM) for potential use in on-chip applications is experimentally demonstrated using a 3-mode 750 μm Silicon photonics structure. Results are presented for simultaneous transmission of two data channels on two separate modes (bit error rate < 10?12 at 10 Gb/s) sampled by an optically forwarded clock sent on a third separate mode. Performance assessment of the mode assignment for the clock is presented. The investigation shows that an optimum clock placement is important at wavelengths where modal crosstalk is higher. For example, at 1553 nm, the clock’s jitter decreases from 45 ps down to 2.7 ps where the clock is encoded on a mode with high crosstalk (?18.6 dB) to one that has less crosstalk (?28.6 dB). At 1560 nm where modal crosstalk is better, the clock’s jitter is 2.6 ps (?27.8 dB crosstalk) and 1.1 ps (?34 dB crosstalk) without and with optimum clock placement, respectively. With proper clock to mode assignment, the optical interconnect becomes functional across an optical bandwidth of 11 nm enabling MDM–wavelength-division multiplexing architectures.
关键词: source-synchronous links,mode-division multiplexing,Integrated optics,optical interconnects
更新于2025-09-19 17:13:59