研究目的
To demonstrate a high-speed silicon microring modulator based on a titanium-doped silicon rib waveguide for optical interconnects.
研究成果
The titanium-doped silicon microring modulator achieves high-speed performance with low driving voltage and high extinction ratio, making it suitable for optical interconnects. Future work should focus on scalability and integration with other photonic components.
研究不足
The modulator's performance may be limited by fabrication imperfections and thermal effects. Optimization of doping uniformity and thermal management could improve results.
1：Experimental Design and Method Selection:
The modulator was designed with a small footprint and low driving voltage, utilizing the plasma dispersion effect in silicon. Fabrication involved titanium doping and rib waveguide structuring on a silicon-on-insulator wafer.
2：Sample Selection and Data Sources:
A silicon-on-insulator wafer with a 220 nm top silicon layer and 2 μm buried oxide was used. Titanium doping concentration was set to 1×10^20 cm^{-3}.
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List of Experimental Equipment and Materials:
3. List of Experimental Equipment and Materials: Silicon-on-insulator wafer, titanium dopant, lightwave component analyzer, high-speed photodetector.
4：Experimental Procedures and Operational Workflow:
The modulator was fabricated using standard CMOS processes. Characterization included measuring modulation depth, extinction ratio, bandwidth, and eye diagrams using a lightwave component analyzer and photodetector.
5：Data Analysis Methods:
Data were analyzed to extract modulation parameters such as driving voltage, extinction ratio, and 3-dB bandwidth, with eye diagrams assessed for signal quality.
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