- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Solutiona??Processable 2D Materials Applied in Lighta??Emitting Diodes and Solar Cells
摘要： The last decades have witnessed a remarkable scientific progress in the field of organic and perovskite optoelectronics. Two-dimensional (2D) materials are an attractive building block for next-generation devices, thanks to their unique physical, optical, and electric characteristics including atomically thin bodies, high transmittance, ultralight weight, and tunable band structures. The state-of-the-art optoelectronic devices utilizing 2D materials mainly rely on 2D thin films grown by chemical vapor deposition. Although good device performances have been demonstrated, a huge gap between fundamental studies and practical applications remains, because of the high cost and troublesome transfer/restacking processes. Therefore, flexible and transparent light-emitting diodes (LEDs) and solar cells (SCs) containing solution-processed 2D materials from top-down exfoliation methods have recently emerged as promising candidates for future light conversion and emission devices. They combine ease of processing, tailorable optoelectronic features, facile integration with complementary layers, compatibility with arbitrary substrates, and enhanced performances. In addition, the latest processing techniques (such as ink-jet printing, spray coating) also offer the opportunity for the scaled-up fabrication of square-meter-scale low-cost device systems. Recent advances, challenges, and future perspectives of solution-processed 2D materials for usage in emerging LEDs and SCs applications are discussed here.
关键词： perovskite optoelectronics,solution process,organic optoelectronics,2D materials
更新于2025-09-19 17:13:59
-
Enhanced Absorption in MoS <sub/>2</sub> /Hg <sub/>0.33</sub> Cd <sub/>0.66</sub> Te Heterostructure for Application in Solar Cell Absorbers
摘要： The heterostructure of mercury cadmium telluride (Hg0.33Cd0.66Te) and monolayer MoS2 with Van der Waals (VdW) interaction is suggested for tuning the optical absorption in visible region. The calculations are performed using density functional theory (DFT). From the results, it is found that for molybdenum disulfide (MoS2) absorption is high in the ～390–430 nm range of visible region and for mercury cadmium telluride (Hg0.33Cd0.66Te) absorption is high in the ～310–350 nm. However, absorption in the MoS2/Hg0.33Cd0.66Te heterostructure increases with the wavelength and also shifts towards the red region of the visible spectrum, resulting into a well known red-shift phenomenon. Moreover, higher absorption is seen (entirely in visible region) in the heterostructure in the desired visible region range (λ ～640–710 nm) of the spectrum required for application in optoelectronic devices. The heterostructure results into semi-metallic or negligible indirect bandgap creation in contrast to direct bandgap observed in individual MoS2 and Hg0.33Cd0.66Te structures. The heterostructure can find application in Schottky barrier solar cell absorbers.
关键词： Optoelectronics,solar cells,transition metal dichalcogenides,absorption coefficient,refractive index
更新于2025-09-19 17:13:59
-
Nonradiative Energy Transfer between Thickness-Controlled Halide Perovskite Nanoplatelets
摘要： Despite showing great promise for optoelectronics, the commercialization of halide perovskite nanostructure-based devices is hampered by inefficient electrical excitation and strong exciton binding energies. While transport of excitons in an energy-tailored system via F?rster resonance energy transfer (FRET) could be an efficient alternative, halide ion migration makes the realization of cascaded structures difficult. Here, we show how these could be obtained by exploiting the pronounced quantum confinement effect in two-dimensional CsPbBr3-based nanoplatelets (NPls). In thin films of NPls of two predetermined thicknesses, we observe an enhanced acceptor photoluminescence (PL) emission and a decreased donor PL lifetime. This indicates a FRET-mediated process, benefitted by the structural parameters of the NPls. We determine corresponding transfer rates up to kFRET = 0.99 ns?1 and efficiencies of nearly ηFRET = 70%. We also show FRET to occur between perovskite NPls of other thicknesses. Consequently, this strategy could lead to tailored energy cascade nanostructures for improved optoelectronic devices.
关键词： nanoplatelets,quantum confinement,FRET,halide perovskite,optoelectronics
更新于2025-09-19 17:13:59
-
High Responsivity and High Rejection Ratio Self-Powered Solar-Blind Ultraviolet Photodetector Based on PEDOT:PSS/β-Ga2O3 Organic/Inorganic p-n Junction
摘要： A high responsivity self-powered solar-blind deep UV (DUV) photodetector with high rejection ratio was proposed based on inorganic/organic hybrid p-n junction. Owing to the high crystalized β-Ga2O3 and excellent transparent conductive polymer PEDOT:PSS, the device exhibited ultrahigh responsivity of 2.6 A/W at 245 nm with a sharp cut off wavelength at 255 nm without any power supply. The responsivity is much larger than that of previous solar-blind DUV photodetectors. Moreover, the device exhibited an ultrahigh solar-blind/UV rejection ratio (R245 nm /R280 nm) of 103, which is two orders of magnitude larger than the average value ever reported in Ga2O3-based solar-blind photodetectors. In addition, the photodetector shows a narrow band-pass response of only 17 nm in width. This work might be of great value in developing high wavelength selective DUV photodetector with respect to low cost for future energy-efficient photoelectric devices.
关键词： Self-Powered,PEDOT:PSS/β-Ga2O3,Plasmonics and Optoelectronics,Organic/Inorganic p-n Junction,Energy Conversion and Storage,High Rejection Ratio,High Responsivity,Solar-Blind Ultraviolet Photodetector
更新于2025-09-19 17:13:59
-
Recent Development in Optoelectronic Devices || Introductory Chapter: Iridium Complexes as Organic Light Emitting Diodes (OLEDs): A Theoretical Analysis
摘要： A specific discipline of electronics, which focus on light-emitting or light-detecting devices, the term “Optoelectronics” is used in the broader perspective. Such devices include those that emit light (LEDs and light bulbs), channel light (fiber optic cables), detect light (photodiodes and photoresistors), or are controlled by light (optoisolators and phototransistors). An interesting combination of electronics and optics, Optoelectronics find varied applications in telecommunications, military services, medical field, solid state devices (sensors, IR emitters, and laser emitters), and automatic control systems. The other counterparts as photo resistors and photovoltaic devices are also used for various applications. Nowadays, photodetectors has confronted significant challenges regarding the realization of efficient and sensitive detection with low-noise for the ultraviolet (UV), visible, and infrared regimes of electromagnetic spectrum.
关键词： OLEDs,Optoelectronics,Phosphorescent Emission,Iridium Complexes,Theoretical Analysis
更新于2025-09-19 17:13:59
-
[IEEE 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Bengaluru, India (2018.12.17-2018.12.19)] 2018 4th IEEE International Conference on Emerging Electronics (ICEE) - Hierarchical structures and multiscale optical coupling for improved photodetectors
摘要： Hierarchical structures comprise of patterns which are themselves structured at lower length scales. Such structures can outperform the performance limits posed by continuum and non-hierarchical structures. However, the possible role of hierarchical structuring in photonics and optoelectronics are not well understood. Here we report on the implications of using materials structured at multiple length scales in the design of spectrally uniform photodetectors. We present our results on the design and fabrication of hierarchical structures comprising of alternating planar and nanostructured microscale domains interspersed with nanoscale objects. These structures show the possibility of obtaining unusual control over the flow of light compared to conventional non-hierarchical structures through the coupling of light across micro-domains. These multiscale structures are fabricated using self-assembly and a novel mechanical strain- augmented template based nano-molding process. We fabricate in a random multi-periodic nanostructures embedded distribution of micro-domains, using an initial template which has only monoperiodic structures. Organic photodetectors fabricated on these molded multiscale platforms show considerable improvements in spectral uniformity. This design advantage arises through the multiscale optical processes which preferentially filter light entering the absorber, which occur only in a hierarchically structured device. In summary, this paper explores unusual ways to control the flow of light using hierarchical structures. On the optoelectronic design front, hierarchical structures are seen to improve the spectral uniformity of photodetectors beyond the limits of continuum and non-hierarchical material design. Further, this effort pushes the limits of monodisperse self-assembly to fabricate static multiperiodic structures, using facile mechanical strain augmented nanofabrication, which was hitherto a challenge.
关键词： multiscale,hierarchical,optoelectronics,photodetectors,self-assembly,photonics
更新于2025-09-19 17:13:59
-
[IEEE 2019 Device Research Conference (DRC) - Ann Arbor, MI, USA (2019.6.23-2019.6.26)] 2019 Device Research Conference (DRC) - Efficient Optoelectronics with 2D Materials
摘要： Layered two-dimensional (2D) materials come in a large variety of material combinations and structure, and hence optoelectronic properties. Some of the materials’ intrinsic properties, like broadband absorption from ultraviolet (UV) to far infrared (IR) and THz, direct bandgap or high absorption per layer, make them promising candidates for optoelectronic devices. They can further be integrated with exiting (commercial) technologies to enhance the performance or functionality of state-of-the-art devices. In this talk, several examples of optoelectronic devices will be discussed that exploit certain properties of 2D materials for enhanced performance. All materials used in the respective references have been chemical vapor deposited or thermally converted in the case of platinum diselenide (PtSe2).
关键词： graphene,2D materials,silicon photonics,photodiodes,optoelectronics
更新于2025-09-19 17:13:59
-
High‐Performance Flexible Broadband Photodetectors Based on 2D Hafnium Selenosulfide Nanosheets
摘要： 2D transition-metal dichalcogenides have attracted significant interest in recent years due to their multiple degrees of freedom, allowing for tuning their physical properties via band engineering and dimensionality adjustment. The study of ternary 2D hafnium selenosulfide HfSSe (HSS) high-quality single crystals grown with the chemical vapor transport (CVT) technique is reported. An as-grown HSS single crystal exhibits excellent phototransistor performance from the visible to the near-infrared with outstanding stability. A giant photoresponsivity (≈6.4 × 104 A W?1 at 488 nm) and high specific detectivity (≈1014 Jones) are exhibited by a device fabricated by exfoliating single-crystal HSS of nano-thickness on a rigid Si/SiO2 substrate. The application of HSS single crystal is extended to yield a sensible flexible photodetector of photoresponsivity up to ≈1.3 A W?1 at 980 nm. The photoresponsivity of CVT-grown HSS single crystal is significantly larger than those fabricated with other existing Hf-based chalcogenides. The results suggest that the layered multi-elemental 2D chalcogenide single crystals hold great promise for future wearable electronics and integrated optoelectronic circuits.
关键词： crystal growth,photoresponsivity,transition metal dichalcogenides,flexible optoelectronics,specific detectivity
更新于2025-09-19 17:13:59
-
Wafer-size growth of 2D layered SnSe films for UV-Visible-NIR Photodetector Arrays with High Responsitivity
摘要： Due to its excellent electrical and optical property, tin selenide (SnSe), a typical candidate of two-dimentional (2D) semiconductors, has attracted great attention in the field of novel optoelectronics. However, the large-area growth of high-quality SnSe films still remain a great challenge which limit its practical applications. Here, wafer-size SnSe ultrathin films with high uniformity and crystallization are deposited via a scalable magnetron sputtering method. The results show that the SnSe photodetector is highly sensitive to a broad wavelength in the UV-Visible-NIR range, especially showing an extremely high responsivity of 277.3 A W -1 with the corresponding external quantum efficiency of 8.5×104% and detectivity of 7.6×1011 Jones. These figures-of-merits are among the best performance for the sputter-fabricated 2D photodetector devices. The photodetecting mechanisms based on a photogating effect induced by the trapping effect of the localized defects are discussed in details. The results indicate that the few-layered SnSe films from the sputtering growth would have great potential in designing high-performance photodetector arrays.
关键词： tin selenide,detectivity,responsivity,optoelectronics,SnSe,UV-Visible-NIR,2D semiconductors,external quantum efficiency,photodetector,magnetron sputtering
更新于2025-09-19 17:13:59
-
European Microscopy Congress 2016: Proceedings || Improving 3d correlation in integrated correlated light and electron microscopy using confocal laser scanning microscopy
摘要： Integrated optoelectronics for fast and efficient light detection and imaging in the infrared and visible spectrum.
关键词： optoelectronics,visible spectrum,light detection,infrared,imaging
更新于2025-09-16 10:30:52