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Magnetron sputtered SnO <sub/>2</sub> constituting double electron transport layers for efficient PbS quantum dots solar cells
摘要： In this work, for the first time, we have successfully demonstrated that radiofrequency (RF) magnetron sputtered SnO2 can be a qualified alternative electron transport layer (ETL) for high-efficiency PbS quantum dot (QD) solar cell. Our highest-performing device using such a SnO2 ETL obtained an efficiency of 8.4%, which is comparable to the sol-gel ZnO based one (8.8%). The excellent performance mainly results from the improved current density, which is attributed to the superior properties of SnO2 ETL, such as the high electron mobility and excellent optical transmittance. However, we also found that the sputtered SnO2 based devices show smaller voltage and fill factor due to the unsatisfied surface morphology and energy level alignment. By combining a thin (around 10 nm) sol-gel ZnO film on top of sputtered SnO2 film to form the double ETL, we obtained the best efficiency of 10.1%, which is the highest efficiency for using SnO2 ETL in PbS QD solar cell. Our work not only provides a new avenue to improve the efficiency of PbS QD solar cells but also offers the possibility to use the industry compatible sputtering technique for PbS QD solar cells.
关键词： electron transporting layer,SnO2,magnetron sputtering,PbS,quantum dot solar cell
更新于2025-09-23 15:21:01
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Effect of annealing temperature of MoO3 layer in MoO3/Au/MoO3 (MAM) coated PbS QDs sensitized ZnO nanorods/FTO glass solar cell
摘要： This research reports fabrication of MoO3/Au/MoO3 (MAM) coated PbS sensitized quantum dot solar cell. ZnO nanorod grown FTO glass substrates were sensitized by PbS quantum dots (PbS QDs/ZnO nanorods/FTO Glass), followed by (MoO3/Au/MoO3) coating. Hydrothermal process was used to grow ZnO nanorods, followed by the deposition of PbS QDs using Successive Ionic Layer Adsorption and Reaction (SILAR). Finally, (MoO3/Au/MoO3) layers were deposited for the back contact. Spin coating was used to deposit MoO3 layers while middle layer of Au was deposited by sputter coating. Three such devices were fabricated with three di?erent annealing temperatures i.e. 100 °C, 150 °C and 200 °C for ?rst MoO3 layer. Scanning Electron Microscopy (SEM) was used for surface morphology of the devices; Energy Dispersive Spectroscopy Analysis (EDS) and X-Ray Di?raction (XRD) techniques were used for elemental and structural analysis, Optical properties of the devices were determined using UV–Visible analysis. Power conversion e?ciency (PCE) of all three devices was obtained to observe devices performance. Improved PCE of 4.617% was obtained by the device with the thermal treatment of 150 °C.
关键词： Quantum dots,ZnO nanorods,MoO3 thin ?lm,PbS quantum dot sensitized Solar Cell
更新于2025-09-23 15:19:57
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Air exposure oxidation and photooxidation of solution-phase treated PbS quantum dot thin films and solar cells
摘要： The air exposure oxidation mechanisms of PbS quantum dot (QD) thin films and solar cells are studied in the current paper. As a novel and advantageous method, QD thin films were prepared by the single-step deposition of colloidal QDs treated with different ligands of butylamine (BA), mercaptopropionic acid (MPA), tetra-butylammonium iodide (TBAI), methylammonium iodide (MAI) and methylammonium lead triiodide (MAPbI3, perovskite). Photoluminescence (PL) measurements evaluated the stability of different surface treated PbS QDs during the colloidal to thin film transformation, and over the air exposure times. Blue-shift and quenching the PL spectra suggested rapid oxidation of QD thin films at the first times of air exposure. However, the oxidation rates significantly reduced for the QD thin films treated with organic MPA and all the inorganic ligands. According to the X-ray photoelectron spectroscopy (XPS) studies, thin films oxidation accompanied with the formation of PbSO3 and PbSO4 compounds on the (100) facets of PbS QDs. Although MAPbI3 treatment led to the complete passivation of QDs in the air, perovskite shelling partially oxidized to PbO and PbCO3 compounds. Furthermore, the PL enhancement phenomenon observed at the first times of air exposure for the TBAI and MAPbI3-treated QD thin films, as a result of their strong surface passivation as well as the photoenhancement and photoelectrification mechanisms. Eventually, p-n and p-i-n structured solar cells were fabricated by the single-step deposition of solution-phase treated PbS QD inks. In this case, inorganic surface treatments not only increased the power conversion efficiency (PCE) of solar cells, but also led to a high stability of fabricated devices in the air environment (lower than 1% PCE loss after 500 h of storage in the air).
关键词： PbS quantum dot,Solar cell,Ligand,Photooxidation,Thin film,Air stability
更新于2025-09-19 17:13:59
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Passivation via atomic layer deposition Al2O3 for the performance enhancement of quantum dot photovoltaics
摘要： PbS colloidal quantum dot solar cells (CQDSCs) are promising photovoltaic devices with a broad spectral response, solution processability and long-term air stability. Recently, major progresses have been achieved in the performance enhancement of CQDSCs through the chemical surface passivation of CQDs and the device engineering. However, the p-type PbS-EDT hole extraction layer presents high surface-trap density, which induces charge recombination risk and blocks the hole extraction at the PbS-EDT/Au interface. Herein, we demonstrated a method to passivate the surface traps of PbS-EDT film by post-depositing an aluminum oxide (Al2O3) layer using atomic layer deposition (ALD) technology. The ALD progress was carefully controlled to ensure that ALD Al2O3 could overcoat and infill the PbS-EDT film at the same time. This ALD Al2O3 treatment efficiently passivated the surface traps of PbS-EDT and successfully kept the proper band alignment at PbS-TBAI/PbS-EDT interface for the fast hole extraction of CQDSCs. Consequently, this method allowed the efficient carrier extraction at the PbS-EDT/Au interface through suppressing trap-induced reverse Schottky barrier. A power conversion efficiency of 7.07% was finally obtained in the PbS CQDSCs with ALD Al2O3.
关键词： PbS quantum dot solar cells,Atomic layer deposition Al2O3,Passivation,Traps
更新于2025-09-19 17:13:59