研究目的
Investigating the effect of annealing temperature of MoO3 layer in MoO3/Au/MoO3 (MAM) coated PbS QDs sensitized ZnO nanorods/FTO glass solar cell on its performance.
研究成果
The device annealed at 150 °C showed the best performance with a PCE of 4.617%, attributed to the optimal surface smoothness and density of the MoO3 layer. The study concludes that the annealing temperature of the MoO3 layer significantly affects the performance of the QDSC, with 150 °C being the optimal temperature for the reported device structure.
研究不足
The study is limited to the effect of annealing temperature on the MoO3 layer within the range of 100 °C to 200 °C. Potential areas for optimization include exploring a wider range of annealing temperatures and other materials for the hole extraction layer.
1:Experimental Design and Method Selection:
Hydrothermal process for ZnO nanorods growth, SILAR for PbS QDs deposition, spin coating for MoO3 layers, and sputter coating for Au layer.
2:Sample Selection and Data Sources:
FTO glass substrates were used.
3:List of Experimental Equipment and Materials:
SEM for surface morphology, EDS and XRD for elemental and structural analysis, UV–Visible analysis for optical properties.
4:Experimental Procedures and Operational Workflow:
Growth of ZnO nanorods, deposition of PbS QDs, and deposition of MAM layers with varying annealing temperatures.
5:Data Analysis Methods:
XRD for structural analysis, SEM and EDS for morphological and compositional analysis, UV–Visible for optical properties, and J-V curves for photovoltaic performance.
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