- 标题
- 摘要
- 关键词
- 实验方案
- 产品
-
Effect of concentration of DH6T on the performance of photoconductor fabricated using blends of P3HT and DH6T
摘要： The influence of small molecule (SM) α, ω-di-hexyl-sexithiophene (DH6T) concentration, in the blends of conjugated polymer (CP) poly (3-hexylthiophene) (P3HT) and DH6T, was investigated in terms of barrier potential reduction and improved photoresponse of the fabricated photoconductor using these blends. Barrier potential in Au/P3HT:DH6T/Au device structure, occurring at the interface of Au (top)/P3HT:DH6Twas estimated by Fowler Nordheim (FN) tunneling model-based analysis of I-V characteristics. The barrier potential of the fabricated device was observed to decrease upon addition of a small quantity of DH6T in comparison to the pristine polymer-based device. This reduction in barrier was attributed to the improved ordering and morphology of the polymer chains upon blending it with an SM. The variation in the ordering of the polymer chains was further confirmed with Photoluminescence spectroscopy, Absorption spectroscopy, and XRD data. Subsequently, it was also observed that only up to a definite SM concentration (25% in this study) ordering of polymer chains improved causing a reduction in barrier potential and subsequent improvement in the photoresponse of the fabricated devices. Finally, it was observed that the optimized blending of CP and SM could to be useful in reducing the effect of penetration of Au inside the CP matrix in the top contact configuration thereby resulting in the reduction of a barrier for carrier injection which is generally lower in the bottom contact configurations. These studies are critical from the point of view of the development of photoconductors and photosensitive top contact organic field effect transistors (OFETs).
关键词： Barrier potential,Small molecule,Photoconductor,Conjugated polymer
更新于2025-11-19 16:56:35
-
2D-SnS$_2$ Nanoflakes Based Efficient Ultraviolet Photodetector
摘要： This paper reports a SnS2 nanoflakes based UV photodetector having high sensitivity and thermal stability upto 120 ?C. Simple and low cost solvothermal technique has been used to synthesize SnS2 nanoflakes of close to hexagonal shapes. A simple photoconductor structure on SiO2/Si substrate is fabricated by using Ag as contact material. The resultant device has good sensitivity (～400), responsivity (～5.5 A/W), EQE (～1868%), detectivity (～1.72 × 1013 Jones) and low response time (～2.2 s). The reported characteristics are superior to many other UV photodetectors utilizing complex hybrid structure of the device, either in form of additional filter layer or nanostructural light sensitive material.
关键词： photoconductor,UV photodetector,SnS2 nanoflakes,2-D material
更新于2025-09-23 15:21:01
-
Fabrication of bifacial sandwiched heterojunction photoconductor a?? Type and MAI passivated photodiode a?? Type perovskite photodetectors
摘要： In this work, we report novel heterojunctions perovskite photodetector architecture utilizing metal-free contact electrodes. The metal-free contact electrodes were exploited to fabricate photoconductor – type perovskite photodetector. The attempt to investigate the effect of passivating the active layers of the as – proposed architecture with electrolytic MAI gave rise to a photodiode – type perovskite photodetector. These two photodetector types are sensitive and responsive to light sources through their dual transparent electrodes faces (N-face and T-face). We also showed that passivating the surfaces of the sandwiched perovskite layers with MAI solution improves the performance of the fabricated photodetectors, where the detectivity is enhanced by a factor of hundred compared to non-passivated devices. The proposed photodetectors architectures demonstrate champion dual-detectivity (1.77×1014 Jones for N-face and 4.64 × 1014 Jones for T-face), dual-responsivity (1.94 × 103 A/W for N-face and 1.61 × 103 A/W for T-face) and high dual – sensitivity (3.3 × 102 for N-face and 1.1 × 102 for T-face). All these properties were obtained from the two faces of the MAI passivated photodetectors under 0.02 mW/cm2 red LED illumination and at -2.0 bias voltage. This novel architecture may scale up towards building energy and cost efficient classes of optoelectronic and photovoltaic devices which are responsive to light in two directions.
关键词： MAI Passivation,Bifacial,Photoconductor,Perovskites,Photodetectors,Photodiode
更新于2025-09-23 15:21:01
-
Synchronous Enhancement for Responsivity and Response Speed in In2Se3 Photodetector Modulated by Piezoresistive Effect
摘要： Although ultra-high single performance indicators have been achieved based on two-dimensional(2D) semiconductors, the comprehensive performances of the photodetectors of them are not so desirable. Note that the response speed and responsivity are two key figures of merit for photodetectors, while these two parameters are always mutually suppressive and can not be synchronously satisfied. Here, we proposed a feasible strategy that can simultaneously improve the responsivity and response speed of In2Se3-based photodetectors, by applying the mechanical strain and producing the piezoresistive effect, which can synergistically modulate the band structure and boost the overall photodetecting performances. Through studying the optoelectronic properties of In2Se3 photodetector under strain modulations, we found that the responsivity under 0.65% tensile strain is improved by almost 68.6% on average while responsivity under 0.65% compressive strain is lowered by about 57.3% in the wavelength range of 200-1000 nm. More importantly, the response speed of the In2Se3-based photodetector under two different mechanical strains rises distinctly (from 244 to 214 and 180 μs, accordingly). The strain-engineering can accommodate the band structure and enhance the electric and optical properties of the semiconducting crystals, ultimately realizing high-performance photodetectors. The strategy proposed in this work for improving the performance of photodetectors provides a promising route to practical applications in next-generation optoelectronic devices.
关键词： photoconductor,mechanical strain,Schottky barrier,van der Waals,piezoresistive effect
更新于2025-09-11 14:15:04
-
Pulsed 70?kV X-ray sensing behavior of Cu2HgI4 thick films
摘要： X-ray photoconductors are widely used in flat panel X-ray detectors in medical and dental imaging systems. In the present work, X-ray photoconductivity measurement of Cu2HgI4 thick film was performed using a real-time intraoral X-ray machine. To perform the sensing measurement, wet chemical derived Cu2HgI4 sample was coated as a thick film by slurry deposition route on top of the tin coated copper patterned electrode. Prior to the sensing measurement, Cu2HgI4 powder sample was characterized using powder X-ray diffraction, scanning electron microscope, energy dispersive x-ray analysis, Fourier transformed infrared spectroscopy and diffused reflectance spectroscopy. These analysis confirms the sample is in single phase with crystallites are in sub-spherical morphologies. The resistance of Cu2HgI4 thick film was measured under the presence and absence of pulsed 70 kV X-ray for various exposure durations from 0.06 to 3.2 s using a Keithley 2450 source meter. Appreciable sensitivity against intraoral pulsed 70 kV X-ray sensing behavior of Cu2HgI4 thick films explore the possibility of utilizing it as a photoconductor for flat panel X-ray imaging detectors.
关键词： X-ray photoconductor,Cu2HgI4,Thick films sensors,Pulsed 70 kV X-ray
更新于2025-09-10 09:29:36